Publisher Correction: Alloying Conducting Channels for Reliable Neuromorphic Computing

Han‐Wool Yeon,Peng Lin,Chanyeol Choi,Scott H. Tan,Yongmo Park,Doyoon Lee,Jae Yong Lee,Feng Xu,Bin Gao,Huaqiang Wu,He Qian,Yifan Nie,Seyoung Kim,Jeehwan Kim

DOI: https://doi.org/10.1038/s41565-020-0735-0

IF: 38.3

2020-01-01

Nature Nanotechnology

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.

What problem does this paper attempt to address?

Alloying conducting channels for reliable neuromorphic computing (vol 56, pg 632, 2020)

Hanwool Yeon,Peng Lin,Chanyeol Choi,Scott H. Tan,Yongmo Park,Doyoon Lee,Jaeyong Lee,Feng Xu,Bin Gao,Huaqiang Wu,He Qian,Yifan Nie,Seyoung Kim,Jeehwan Kim

DOI: https://doi.org/10.1038/s41565-020-0735-0

IF: 38.3

2020-01-01

Nature Nanotechnology

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Author Correction: Stretchable, Dynamic Covalent Polymers for Soft, Long-Lived Bioresorbable Electronic Stimulators Designed to Facilitate Neuromuscular Regeneration

Yeon Sik Choi,Yuan-Yu Hsueh,Jahyun Koo,Quansan Yang,Raudel Avila,Buwei Hu,Zhaoqian Xie,Geumbee Lee,Zheng Ning,Claire Liu,Yameng Xu,Young Joong Lee,Weikang Zhao,Jun Fang,Yujun Deng,Seung Min Lee,Abraham Vázquez-Guardado,Iwona Stepien,Ying Yan,Joseph W. Song,Chad Haney,Yong Suk Oh,Wentai Liu,Hong-Joon Yoon,Anthony Banks,Matthew R. MacEwan,Guillermo A. Ameer,Wilson Z. Ray,Yonggang Huang,Tao Xie,Colin K. Franz,Song Li,John A. Rogers

DOI: https://doi.org/10.1038/s41467-020-20857-y

IF: 16.6

2021-01-01

Nature Communications

Abstract:A Correction to this paper has been published: https://doi.org/10.1038/s41467-020-20857-y
Alloying conducting channels for reliable neuromorphic computing

Hanwool Yeon,Peng Lin,Chanyeol Choi,Scott H Tan,Yongmo Park,Doyoon Lee,Jaeyong Lee,Feng Xu,Bin Gao,Huaqiang Wu,He Qian,Yifan Nie,Seyoung Kim,Jeehwan Kim

DOI: https://doi.org/10.1038/s41565-020-0694-5

Abstract:A memristor1 has been proposed as an artificial synapse for emerging neuromorphic computing applications2,3. To train a neural network in memristor arrays, changes in weight values in the form of device conductance should be distinct and uniform3. An electrochemical metallization (ECM) memory4,5, typically based on silicon (Si), has demonstrated a good analogue switching capability6,7 owing to the high mobility of metal ions in the Si switching medium8. However, the large stochasticity of the ion movement results in switching variability. Here we demonstrate a Si memristor with alloyed conduction channels that shows a stable and controllable device operation, which enables the large-scale implementation of crossbar arrays. The conduction channel is formed by conventional silver (Ag) as a primary mobile metal alloyed with silicidable copper (Cu) that stabilizes switching. In an optimal alloying ratio, Cu effectively regulates the Ag movement, which contributes to a substantial improvement in the spatial/temporal switching uniformity, a stable data retention over a large conductance range and a substantially enhanced programmed symmetry in analogue conductance states. This alloyed memristor allows the fabrication of large-scale crossbar arrays that feature a high device yield and accurate analogue programming capability. Thus, our discovery of an alloyed memristor is a key step paving the way beyond von Neumann computing.
Publisher Correction: Third-order nanocircuit elements for neuromorphic engineering

Suhas Kumar,R. Stanley Williams,Ziwen Wang

DOI: https://doi.org/10.1038/s41586-021-03349-x

IF: 64.8

2021-03-23

Nature

Abstract:A Correction to this paper has been published: https://doi.org/10.1038/s41586-021-03349-x.

multidisciplinary sciences
Publisher Correction: An electrically conductive silver–polyacrylamide–alginate hydrogel composite for soft electronics

Yunsik Ohm,Chengfeng Pan,Michael J. Ford,Xiaonan Huang,Jiahe Liao,Carmel Majidi

DOI: https://doi.org/10.1038/s41928-021-00571-3

IF: 33.255

2021-03-31

Nature Electronics

Abstract:A Correction to this paper has been published: https://doi.org/10.1038/s41928-021-00571-3.

engineering, electrical & electronic
Publisher Correction: an Electrochemical Thermal Transistor

Sood, Aditya,Xiong, Feng,Chen, Shunda,Wang, Haotian,Selli, Daniele,Zhang, Jinsong,McClellan, Connor J.,Sun, Jie,Donadio, Davide,Cui, Yi,Pop, Eric,Goodson, Kenneth E.

DOI: https://doi.org/10.1038/s41467-019-12471-4

IF: 16.6

2019-01-01

Nature Communications

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Author Correction: Effect of FeCoNiCrCu0.5 High-entropy-alloy Substrate on Sn Grain Size in Sn-3.0Ag-0.5Cu Solder

Yu-An Shen,Chun-Ming Lin,Jiahui Li,Siliang He,Hiroshi Nishikawa

DOI: https://doi.org/10.1038/s41598-020-67126-y

IF: 4.6

2020-07-22

Scientific Reports

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.

multidisciplinary sciences
Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Jeff J P M Schulpen,Cindy H X Lam,Rebecca A Dawley,Ruixue Li,Lun Jin,Tao Ma,Wilhelmus M M Kessels,Steven J Koester,Ageeth A Bol

DOI: https://doi.org/10.1021/acsanm.4c02304

2024-05-07

Abstract:[This corrects the article DOI: 10.1021/acsanm.4c00094.].
Publisher Correction: Metal Halide Perovskites: Perovskite Transistors Clean Up Their Act

Huihui Zhu,Ao Liu,Yong-Young Noh

DOI: https://doi.org/10.1038/s41928-020-00503-7

IF: 33.255

2020-01-01

Nature Electronics

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Publisher Correction: Enhanced Ferroelectricity in Ultrathin Films Grown Directly on Silicon.

Suraj S. Cheema,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret R. McCarter,Claudy R. Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li-Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V Chopdekar,Padraic Shafer,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin

DOI: https://doi.org/10.1038/s41586-020-2297-6

IF: 64.8

2020-01-01

Nature

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Author Correction: A Strong and Ductile Medium-Entropy Alloy Resists Hydrogen Embrittlement and Corrosion

Hong Luo,Seok Su Sohn,Wenjun Lu,Linlin Li,Xiaogang Li,Chandrahaasan K. Soundararajan,Waldemar Krieger,Zhiming Li,Dierk Raabe

DOI: https://doi.org/10.1038/s41467-020-17295-1

IF: 16.6

2020-01-01

Nature Communications

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Publisher Correction: Understanding interface stability in solid-state batteries

Yihan Xiao,Yan Wang,Shou-Hang Bo,Jae Chul Kim,Lincoln J. Miara,Gerbrand Ceder

DOI: https://doi.org/10.1038/s41578-020-0191-3

IF: 83.5

2020-01-01

Nature Reviews Materials

Abstract:n amendment to this paper has been published and can be accessed via a link at the top of the paper.
Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Sujaya Kumar Vishwanath,Benny Febriansyah,Si En Ng,Tisita Das,Jyotibdha Acharya,Rohit Abraham John,Divyam Sharma,Putu Andhita Dananjaya,Metikoti Jagadeeswararao,Naveen Tiwari,Mohit Ramesh Chandra Kulkarni,Wen Siang Lew,Sudip Chakraborty,Arindam Basu,Nripan Mathews

DOI: https://doi.org/10.1039/d4mh90073a

IF: 13.3

2024-09-01

Materials Horizons

Abstract:Correction for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath et al. , Mater. Horiz. , 2024, 11 , 2643–2656, https://doi.org/10.1039/D3MH02055J.

materials science, multidisciplinary,chemistry
Author Correction: Morphing Electronics Enable Neuromodulation in Growing Tissue

Yuxin Liu,Jinxing Li,Shang Song,Jiheong Kang,Yuchi Tsao,Shucheng Chen,Vittorio Mottini,Kelly McConnell,Wenhui Xu,Yu-Qing Zheng,Jeffrey B.-H. Tok,Paul M. George,Zhenan Bao

DOI: https://doi.org/10.1038/s41587-020-0533-0

IF: 46.9

2020-01-01

Nature Biotechnology

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Author Correction: Scalable synthesis of hierarchically structured carbon nanotube–graphene fibres for capacitive energy storage

Yu, Dingshan,Goh, Kunli,Wang, Hong,Wei, Li,Jiang, Wenchao,Zhang, Qiang,Dai, Liming,Chen, Yuan

DOI: https://doi.org/10.1038/s41565-020-0718-1

IF: 38.3

2020-01-01

Nature Nanotechnology

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Congwei Tan,Mengshi Yu,Junchuan Tang,Xiaoyin Gao,Yuling Yin,Yichi Zhang,Jingyue Wang,Xinyu Gao,Congcong Zhang,Xuehan Zhou,Liming Zheng,Hongtao Liu,Kaili Jiang,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41586-023-06093-6

IF: 64.8

2023-05-04

Nature

Abstract:Nature - Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

multidisciplinary sciences
Erratum: Au/Ni12P5 core/shell nanocrystals from bimetallic heterostructures: in situ synthesis, evolution and supercapacitor properties

Duan, Sibin,Wang, Rongming

DOI: https://doi.org/10.1038/am.2015.25

IF: 10.761

2015-01-01

NPG Asia Materials

Abstract:Correction to: NPG Asia Materials (2014) 6, e122; doi:10.1038/am.2014.65; published online 5 September 2014 The ‘e’ number was incorrect in the PDF version. It should be e122 instead of e00. The correct citation to this article should be read as below: NPG Asia Materials (2014) 6, e122; doi:10.1038/am.
Author Correction: Lattice-strained Metal–organic-Framework Arrays for Bifunctional Oxygen Electrocatalysis

Weiren Cheng,Xu Zhao,Hui Su,Fumin Tang,Wei Che,Hui Zhang,Qinghua Liu

DOI: https://doi.org/10.1038/s41560-018-0308-8

IF: 56.7

2020-01-01

Nature Energy

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Correction to: Noble metal-based high-entropy alloys as advanced electrocatalysts for energy conversion

Yu-Chen Qin,Feng-Qi Wang,Xin-Ming Wang,Ming-Wei Wang,Wen-Long Zhang,Wan-Kai An,Xiao-Peng Wang,Yun-Lai Ren,Xin Zheng,Dong-Can Lv,Ayyaz Ahmad

DOI: https://doi.org/10.1007/s12598-021-01780-7

IF: 6.318

2021-06-04

Rare Metals

Abstract:A correction to this paper has been published: https://doi.org/10.1007/s12598-021-01727-y

materials science, multidisciplinary,metallurgy & metallurgical engineering

Publisher Correction: Alloying Conducting Channels for Reliable Neuromorphic Computing

Alloying conducting channels for reliable neuromorphic computing (vol 56, pg 632, 2020)

Author Correction: Stretchable, Dynamic Covalent Polymers for Soft, Long-Lived Bioresorbable Electronic Stimulators Designed to Facilitate Neuromuscular Regeneration

Alloying conducting channels for reliable neuromorphic computing

Publisher Correction: Third-order nanocircuit elements for neuromorphic engineering

Publisher Correction: An electrically conductive silver–polyacrylamide–alginate hydrogel composite for soft electronics

Publisher Correction: an Electrochemical Thermal Transistor

Author Correction: Effect of FeCoNiCrCu0.5 High-entropy-alloy Substrate on Sn Grain Size in Sn-3.0Ag-0.5Cu Solder

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Publisher Correction: Metal Halide Perovskites: Perovskite Transistors Clean Up Their Act

Publisher Correction: Enhanced Ferroelectricity in Ultrathin Films Grown Directly on Silicon.

Author Correction: A Strong and Ductile Medium-Entropy Alloy Resists Hydrogen Embrittlement and Corrosion

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Publisher Correction: Understanding interface stability in solid-state batteries

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Author Correction: Morphing Electronics Enable Neuromodulation in Growing Tissue

Author Correction: Scalable synthesis of hierarchically structured carbon nanotube–graphene fibres for capacitive energy storage

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Erratum: Au/Ni12P5 core/shell nanocrystals from bimetallic heterostructures: in situ synthesis, evolution and supercapacitor properties

Author Correction: Lattice-strained Metal–organic-Framework Arrays for Bifunctional Oxygen Electrocatalysis

Correction to: Noble metal-based high-entropy alloys as advanced electrocatalysts for energy conversion