Enhanced ferroelectricity in ultrathin films grown directly on silicon
Suraj S. Cheema,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret R. McCarter,Claudy R. Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li-Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V Chopdekar,Padraic Shafer,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin
DOI: https://doi.org/10.1038/s41586-020-2208-x
IF: 64.8
2020-04-22
Nature
Abstract:Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories<sup><a href="/articles/s41586-020-2208-x#ref-CR1">1</a>,<a href="/articles/s41586-020-2208-x#ref-CR2">2</a></sup>. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides—the archetypal ferroelectric system<sup><a href="/articles/s41586-020-2208-x#ref-CR3">3</a></sup>. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes<sup><a href="/articles/s41586-020-2208-x#ref-CR4">4</a></sup>. Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO<sub>2</sub>), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime.
multidisciplinary sciences