Design and Realization of Band-gap Reference in LCD

Xinan Wang

2007-01-01

Abstract:This paper introduces a CMOS band-gap reference, which aims at application in LCD display driving IC. The circuit is designed using a standard Chartered 3.3V 0.35μm 18V technology. It can be operated under 2.4V~3.6V supply, and the range of working tepereature is -40℃～85℃.

What problem does this paper attempt to address?

A bandgap reference circuit with nominal value adjustable

Chen Chen,Lenian He

DOI: https://doi.org/10.1109/ICASIC.2007.4415681

2007-01-01

Abstract:This paper presents a bandgap reference circuit, which provides a temperature-independent reference voltage with the nominal value adjustable. The design of the adjustable bandgap reference circuit is based on the method of dividing the voltage of VBE. The chip is implemented in the CSMC mixed-signal 0.5 um CMOS process. The experimental results verified that the nominal value can be adjusted as expected.
A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

Kan Liu,Yadan Shen,Yidie Ye,Lenian He

DOI: https://doi.org/10.1109/EDSSC.2012.6482889

2012-01-01

Abstract:A current reference with 8~25V input voltage range has been designed by using CSMC's 0.18μm BCD process. Based on the bandgap technology, the temperature coefficient of the current reference was obtained to be 105.9~110.7 ppm/°C over the temperature range of -40~125°C when the input voltage was 8~25V. The total quiescent current of the current reference is 9.02μA and 22.55μA when the input voltage is 8V and 25V, respectively. Moreover, the PSR (power supply rejection) at low frequency is -56.2dB ~ -28.1dB, when the input voltage is between 8V and 25V. This current reference has been successfully applied in a white LED driver chip.
A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

Zhi-hua Ning,Le-nian He

DOI: https://doi.org/10.1631/jzus.c1000440

2011-01-01

Journal of Zhejiang University SCIENCE C

Abstract:A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×10−6/°C over the temperature range of −40–125 °C after trimming. The power supply rejection (PSR) was −100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

Yuan Ting,Gong Wen-chao,He Le-nian

2009-01-01

Abstract:This paper demonstrates a design of bandgap voltage reference with high precision and low temperature coefficient.A dual-differential input operational amplifier is used for high-temperature coefficient compensation.The chip is simulated by using Cadence's Spectre software and implemented by using TSMC 0.35 μm mixed-signal process.Simulation results indicate that the bandgap voltage reference has a temperature coefficient of 2.2 ppm/℃ in-40～125 ℃.
A bandgap reference circuit with the nominal reference voltage adjusted accurately

CHEN Chen,HE Le-nian,YAN Xiao-lang

DOI: https://doi.org/10.3969/j.issn.1007-0249.2009.02.018

2009-01-01

Abstract:The nominal output voltage of a bandgap reference circuit is process-determined and fluctuant as process varies.This paper proposes a novel bandgap reference circuit.By modifying the output stage,the nominal output voltage of the proposed reference circuit can be adjusted accurately in a wide range,so that it can be adapted accordingly to satisfy the requirement of the system under different processes.A test circuit has been implemented in the CSMC 0.5μm CMOS process.The testing results show that the method proposed in this paper can adjust the nominal output value in a wide range.
A High Precision Circuit of Bandgap Voltage Reference

Haoliang LI,Lenian HE,Xiaolang YAN

DOI: https://doi.org/10.3969/j.issn.1000-3819.2005.01.016

2005-01-01

Abstract:Based upon analysis of several types of bandgap voltage reference circuit, we demonstrate a high precision circuit of bandgap voltage reference with relatively simple structure for high-speed serial link. With an improved structure of two-stage high-gain operational amplifier, the simulation results show that the error in worst case is 0.057% over the temperature range of -50°C-70°C. Test circuits have been fabricated in TSMC 0.25 μ m CMOS mixed-signal model process. Experimental results yield an output voltage 1.2337-1.2356 V which is constant within 0.154% over the temperature range of -50°C-70° C with power supply of 2.5 V, and average error of 0.016% between simulation and experimental results. The chip area of bandgap voltage reference circuit is 158 μm× 164 μm.
Super Performance CMOS Band-Gap Voltage Reference

ZHU Ying,HE Le-nian,YAN Xiao-lang

DOI: https://doi.org/10.3969/j.issn.1671-7147.2007.02.014

2007-01-01

Abstract:This paper proposes a new type of band-gap voltage reference.A cascode current mirror is used to produce bias currents and hence PMOS channel length modulation errors are reduced.Supply noise is suppressed by adding a simple voltage subtractor circuit.Simulation using Hspice is based on the CSMC 0.6um CMOS process.The results show the temperature coefficient is 2.93×105 ℃ between the temperature range of-50 ℃ to +100 ℃ and the PSR is the-84.2 dB.The band-gap output voltage is within 2.5±0.0012 V when the supply voltage is between 3.5 V and 6.5 V.Therefore,it is an effective way to implement a band-gap voltage reference.
Bandgap Voltage Reference Design with Enhanced Tolerance of Process Variations

YU Miao,LUO Xiaohua,LU Yufeng,LI Yihang

DOI: https://doi.org/10.3785/j.issn.1008-9497.2016.06.013

2016-01-01

Abstract:As the feature size of CMOS technology is scaled down ,devices mismatch and process tolerance will lead to deviation in bandgap reference voltage ,which significantly impacts manufacturing cost by decreasing yield .Based on the Pelgrom's mismatch model , this paper proposes a design methodology from three aspects :parameters , schematic and layout .Hspice simulation result shows that the output of the bandgap reference circuit is (1 .23254 ± 0 .005)V in CSMC 0 .5μm technology .Applying this design in 3 channels LED driver chips ,the test results indicate that the yield reaches 96 .8% ,while the chips that meet the output current requirements of (18 ± 0 .5) mA account for above 99 .6% .
A 1.2 V,9 Ppm/℃ CMOS Bandgap Voltage Reference

ZHONG Changxian,ZHANG Bo,ZHOU Hao,LU Yang

DOI: https://doi.org/10.3969/j.issn.1004-373x.2006.16.043

2006-01-01

Abstract:Based on the analysis of conventional CMOS bandgap voltage reference,by combining the curvature compensation technique,a lowsupply CMOS bandgap voltage reference circuit,with the use of bulkdriven opamp as the feedback amplifier is proposed.The proposed circuit adopts currentmode structure and is designed in standard 0.5 μm CMOS process.The simulation is carried out under the supply voltage of 1.2 V using Hspice,the result shows that the output reference has a TC of 9 ppm/℃ through the temperature range of-40～120 ℃.
Design of reference voltage source integrated in LCoS chip

LIU Hui-gang,GENG Wei-dong,LIU Yan-yan,DAI Yong-ping,FEI Xu-feng

DOI: https://doi.org/10.1109/PRIMEASIA.2010.5604937

2010-01-01

Abstract:This paper proposes the design of programmable multi-channel reference voltage source integrated in LCoS chip, analyses the role of reference voltage in LCoS display system. Emphasis was placed on the design of analog circuits which consist of dual ladder resistor D/A converter and constant gm rail-to-rail operational amplifier. The reference voltage source for gamma correction of LCoS display is taped out by Chartered 0.35 μm CMOS 2P4M Mixed-mode process, and the chip was tested. The test results indicate that the output of the chip can completely meet requirements of the common electronic field-inversion field sequential LCoS display system, and the setup time and accuracy of output voltage achieve the expected target.
A Novel CMOS Current Mode Bandgap Reference

Xing Xinpeng,Li Dongmei,Wang Zhihua

DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.07.004

2008-01-01

Abstract:A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon, avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation, it can reach a temperature coefficient of 23ppm/℃ from 30 t0 150℃ with a line regulation of 2.1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference (without pad) is 0.088mm2.
A Low Voltage High Precision CMOS Bandgap Reference

Xinpeng Xing,Zhihua Wang,Dongmei Li

DOI: https://doi.org/10.1109/norchp.2007.4481079

2007-01-01

Abstract:In this paper, a low voltage bandgap reference with high precision is presented. Utilizing current mode structure, the minimum voltage of the proposed bandgap circuit can be reduced to 900 mV. Compensated with V-EB linearization technique, this bandgap reference can reach a temperature coefficient of 10 ppm/degrees C in the range from 0 degrees C to 150 V. With 1.1-V supply voltage, the power is 47 uW and the PSRR is -55 dB at DC frequency. Occupying 0.186 mm(2) chip area, this bandgap reference has been verified in UMC 0.18um. mixed mode CMOS Technology.
Structure-Improved Low Voltage Low Power CMOS Bandgap Reference

Wang Xin,Li Dongmei

DOI: https://doi.org/10.3969/j.issn.1003-353x.2009.11.023

2009-01-01

Abstract:A low voltage,low power,moderate-precision bandgap reference was presented.An improvement was made on the bandgap reference with resistive subdivision structure,in accordance with its defects in the low-voltage application.The whole structure is simple and the circuit is easy to modulate,and the power dissipation is limited as far as possible.The bandgap reference was implemented in UMC 0.18 μm mixed mode 1.8 V CMOS technology.Measurement results show that the circuit has an accuracy of 20×10-6/℃ at-20 ℃ to 130 ℃ with 1 V voltage supply and a power supply rejection ratio(PSRR) of-54 dB at low frequency.Its total power dissipation is only 3 μW with 1 V voltage supply.
A 0.8V CMOS bandgap voltage reference design

Zhang Bolun,Cui Xiaole,Zhang Yifan,Yang Chun,Xiao Ying,Lin Xinnan

DOI: https://doi.org/10.1109/EDSSC.2015.7285124

2015-01-01

Abstract:A low-voltage bandgap reference implemented in circuit is optimized by adjusting the ratio of the resistors, and reducing the working voltage of operational amplifier. It achieves the performance of a temperature coefficient of 25 ppm/°C in the range of 0∼100°C which works under the voltage of 0.8V. The simulated power supply rejection ratio is 46.3dB @1Hz and the line regulation is 1.5mV/V in the range from 0.8V to 1.8V. © 2015 IEEE.
Novel design of reference voltage source integrated in LCoS chip

Huigang Liu,Weidong Geng,YongPing Dai,Yanyan Liu

2007-01-01

Abstract:This paper proposes the design of programmable multi-channel reference voltage source integrated in LCoS chip, analyses the role of the reference voltage in LCoS display system, and part circuit of schematic, layout, lower-power method are given. The whole circuit is composed of (IC)-C-2 interface circuit, multi-channel registers, control circuit, multi-channel DAC and multi-channel buffer. This paper focuses on multi-channel DAC and multi-channel buffer of the reference voltage source, and Cadence IC design tools are used to complete part of the circuit schematic design and simulation. The CMOS processes of SMIC are used to complete the circuit layout design and follow-up of ERC, DRC, LVS inspected and verified. The final results show that the output of the circuit can completely satisfy the requirements of LCoS display.
A CMOS Bandgap Reference with 1V Supply

Jinggang Sheng,Zhiliang Chen,Bingxue Shi

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.04.038

2005-01-01

Abstract:A CMOS bandgap reference circuit which can operate at 1 V supply is proposed. The proposed circuit is fabricated in SMIC 0.35 μm CMOS process. The measurement results show that the proposed circuit can generate 0.446 V reference voltage in the range of 1-2.5 V supply. The temperature coefficient is less than 3.6 × 10-5/K from room temperature to 100°C.
A 0.18μm CMOS band-gap voltage reference

Xiao Fei,He Shuzhuan,Li Li,Zhao Mao,Gao Minglun

DOI: https://doi.org/10.3969/j.issn.1002-7300.2009.03.002

2009-01-01

Abstract:A band-gap voltage reference used in mix-signal circuits is introduced in this essay.A high-gain amplifier with the cascode structure to improve the power supply rejection,a curvature compensation technique to reduce the variation of the output voltage which dues to the temperature and a two-stage amplifier as the output buffer to get more output voltages divided by resistors are used in the circuit.The circuit is simulated by HSPICE in the SMIC 0.18μm process.When operating at a 1.8 V power supply within the temperature range from-20℃ to 120℃,the device has a temperature coefficient of 17ppm/℃;It outputs a voltage of 1.230V±1.88mV at a room temperature,when the power supply varies for 2V to 5V.
A Ultra Low Power Dissipation CMOS Bandgap Reference

XU Guan-nan,JIA Chen,CHEN Hong,ZHANG Chun

DOI: https://doi.org/10.3969/j.issn.1681-5289.2011.02.004

2011-01-01

Abstract:With the development of SoC in portable devices,low power consumption becomes more and more important.A low power dissipation and small area CMOS voltage reference without resistance,which is operated in subthreshold area,is presented.The circuit includes the characteristics of low power,which is feasible for ultra low power SoC.It has been designed and simulated in 0.18um standard CMOS process technology.The supply current of the above circuit is about 150nA and the line sensitivity is 44.4 ppm/V in a supply voltage range of 1.5V to 3.3V.When the supply voltage is 1.5V,the bandgap reference's output voltage is 1.1126V at room temperature,and the temperature coefficient of voltage is 55 ppm/V in a range from-20 to 80 ℃.The power supply rejection ratio(PSRR) is-66dB at 100Hz in a supply voltage of 1.5V.The occupied chip area of bandgap reference is 0.011mm2.
An Overview of the Research on CMOS Bandgap Reference Sources

XING Xin-peng,LI Dong-mei,WANG Zhi-hua

IF: 1.992

2008-01-01

Microelectronics Journal

Abstract:Bandgap reference source is an important unit in integrated circuits,which supplied reference voltage or current independent of temperature and supply voltage.The principle of CMOS bandgap reference source was described,and the design challenge was pointed out.Finally,CMOS bandgap reference sources with low supply voltage,low power,high precision and high PSRR were analyzed,respectively.
A High Precision Bandgap Reference Used in Power Management Ics

Gu Shurong,Wu Xiaobo,Yan Xiaolang

2007-01-01

Abstract:A 2.5V high precision BiCMOS bandgap reference with supply voltage range of 6V to 18V was proposed and realized. It could be applied to lots of Power Management ICs (Intergrated Circuits) due the high voltage. By introducing a preregulated current source, the PSRR (Power Supply Rejection Ratio) of 103dB at low frequency and the line regulation of 26.7 mu V/V was achieved under 15V supply voltage at ambient temperature of 27 degrees C. Moreover, if the proper resistance trimming is implemented, the temperature coefficient could be reduced to less than 16.4ppm/degrees C. The start up time of the reference voltage could also be decreased with an additional bipolar and capacitor.

Design and Realization of Band-gap Reference in LCD

A bandgap reference circuit with nominal value adjustable

A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

A bandgap reference circuit with the nominal reference voltage adjusted accurately

A High Precision Circuit of Bandgap Voltage Reference

Super Performance CMOS Band-Gap Voltage Reference

Bandgap Voltage Reference Design with Enhanced Tolerance of Process Variations

A 1.2 V,9 Ppm/℃ CMOS Bandgap Voltage Reference

Design of reference voltage source integrated in LCoS chip

A Novel CMOS Current Mode Bandgap Reference

A Low Voltage High Precision CMOS Bandgap Reference

Structure-Improved Low Voltage Low Power CMOS Bandgap Reference

A 0.8V CMOS bandgap voltage reference design

Novel design of reference voltage source integrated in LCoS chip

A CMOS Bandgap Reference with 1V Supply

A 0.18μm CMOS band-gap voltage reference

A Ultra Low Power Dissipation CMOS Bandgap Reference

An Overview of the Research on CMOS Bandgap Reference Sources

A High Precision Bandgap Reference Used in Power Management Ics