Structural Defects on the Electronic Transport Properties of Carbon-Based Nanostructures

Hui Zeng,Jun Zhao,Jianwei Wei,Jean-Pierre Leburton
DOI: https://doi.org/10.1007/978-94-007-6413-2_3
2013-01-01
Abstract:Carbon-based materials are expected to be used as the components of nanodevices in the future. The fabrication and characterization of carbon-based materials with unique electronic and transport properties in terms of atomic engineering at nanoscale have been experimentally realized. However, the occurrence of various defects is widely regarded to be inevitable during the chemically synthesized and lithographically patterned approaches. Moreover, scientist can now make use of electron or ion beams to tailor the atomic structure of low-dimensional material with high precision to obtain particular characteristics. Enormous experimental and theoretical works are dedicated to the understanding of the role of defects on nanomaterials, with special emphasis on carbon-based nanosystems. In this chapter, we report recent advances in the area and present multiscale modeling to investigate the influences of structural defects, including vacancy, substitutional doping, topological defects, Stone–Wales defects, as well as composite defects, on the electronic transport properties of carbon-based low-dimensional materials.
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