Property Study of ZnS Thin Films Prepared by Vacuum Evaporation

Rong Li

1999-01-01

Abstract:Using the vacuum evaporation technique,we evaporated the transmittance ZnS films on glass substrate.The structure of the films contains cubic sphalerite.The films show high resistivity and high transmissivity in visible spectal range.We annealed the flims in different condition and studied the effection of annealing on properities of films.

What problem does this paper attempt to address?

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Yinzhu Jiang,Naoufal Bahlawane

DOI: https://doi.org/10.1016/j.tsf.2010.07.117

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:Great interest in nanoscale thin films (sub-100nm) has been stimulated by the developing demands of functional devices. In this paper, nanoscale zinc oxide (ZnO) thin films were deposited on glass substrates at 300°C by pulsed-spray evaporation chemical vapor deposition. Scanning electron micrographs indicate uniform surface morphologies composed of nanometer-sized spherical particles. The growth kinetics and growth mode are studied and the relationship between the film thickness and the electric properties with respect to the growth mode is interpreted. X-ray diffraction shows that all ZnO films grown by this process were crystallized in a hexagonal structure and highly oriented with their c-axes perpendicular to the plane of the substrate. Optical measurements show transparencies above 85% in the visible spectral range for all films. The absorbance in the UV spectral range respects well the Beer–Lambert law, enabling an accurate optical thickness measurement, and the absorption coefficient was measured for a selected wavelength. The measured band gap energies exhibit an almost constant value of 3.41eV for all films with different thicknesses, which attributed to the thickness-independent crystallite size.
Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Yanping Xia,Peihong Wang,Shiwei Shi,Miao Zhang,Gang He,Jianguo Lv,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.12.106

IF: 5.532

2016-01-01

Ceramics International

Abstract:Al-doped zinc oxide (AZO) thin films were deposited onto flexible ultra-thin glass substrates by using a direct current (DC) magnetron sputtering process. The effects of sputtering power, working pressure and substrate temperature on the morphology and optoelectronic performances of AZO films were investigated. The optimal sputtering power, working pressure and substrate temperature for AZO film were determined to be 100W, 0.9Pa and 150℃, respectively. Further increasing or decreasing the sputtering power, working pressure and substrate temperature degrades the quality of AZO films. XRD patterns show all as-sputtered AZO thin films are preferred to grow along <0002> direction. Moreover, the largest grain size, which depicts the best microstructure of AZO films, matches with the smallest stress value. It can be seen from SEM images that the surface is smooth and dense. The smallest value of the resistivity is 1.784×10−3Ωcm and the average transmittance of all AZO films in the visible range is about 80%. The X-ray photoelectron spectroscopy spectra show that the amount of Al element in the AZO film is very small.
Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

HZ Wu,XL Xu,DJ Qiu,KM He,X Shou

DOI: https://doi.org/10.1088/0256-307x/17/9/025

2000-01-01

Chinese Physics Letters

Abstract:Low temperature epitaxial growth of ZnO films is achieved on Si(001) substrates by reactive electron beam evaporation. Growth temperature is varied from 125° C to 420° C and the optimum temperature is found between 200° C and 300° C. X-ray diffraction shows that the ZnO films are highly c-axis oriented and the line width of (002) diffraction peak is significantly smaller than that measured from the ZnO films deposited by magnetron sputtering. The combined photoluminescence and photoluminescence excitation (PLE) spectroscopic measurements demonstrate the sharp band-absorption edge and exciton absorption in the ZnO films. PLE has also revealed that the absorption characteristic near the band edge is remarkably improved with the increase of oxygen content in the ZnO films, although x-ray diffraction analysis shows that the crystalline structure of ZnO films grown under different oxygen pressures remains unchanged.
A Study of the Properties of RF Sputtered MgXZn1-XO Thin Films

Yu Lei,Zhao Li,Cui Yi-min,Zhang Zhi-yong

DOI: https://doi.org/10.1109/commad.2008.4802087

2008-01-01

Abstract:MgXZn1-XO, a ZnO-based ternary compound, has been recognized as a promising material to be used in UV light emitting devices, UV laser diodes and UV detectors. In this paper, a batch of MgxZn1-xO films were fabricated using radio frequency sputtering on glass substrates with a Mg0.32Zn0.68O target. Then the structure and the optical properties of these films after being treated at different annealing temperatures were studied.
Study on structural and optical properties of Sn-doped ZnO nanoarrays

Min WANG,Chenghua SUI,Bin LV,Yun LI

DOI: https://doi.org/10.3969/j.issn.1001-9731.2015.增刊(Ⅰ).010

2015-01-01

Abstract:ZnO nanoarrays (ZNAs)and tin-doped ZnO nanorod arrays(ZNAs∶Sn)were synthesized by hydro-thermal method on seeded catalyst layer prepared by spin coating method.The effect of Sn doping in ZnO nano-rod arrays (ZNAs)was investigated by X-ray diffraction,scanning electron microscopy,optical transmittance spectra and ellipsometer,and the Bruggeman effective medium approximation (EMA)theory was employed to model porous columnar structures of ZNAs to acquire the optical constants of our samples.Compared with the pure ZNAs,the ZNAs∶Sn have a higher transmittance at the wavelength range 300-800 nm.Calculating with the global standard spectrum (AM1.5),the 5% doped ZNAs∶Sn has the highest energy of transmission at the wavelength 300-800 nm,which is 1.6 times as the value that the pure ZNAs has.
Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Hz Wu,Km He,Dj Qiu,Dm Huang

DOI: https://doi.org/10.1016/S0022-0248(00)00397-3

IF: 1.8

2000-01-01

Journal of Crystal Growth

Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
Enhancing crystalline/optical quality and electrical properties of the Co-doped ZnS thin films a comparative study

Dongwen Gao,Li Wang,Xueqiong Su,Jin Wang,Ruixiang Chen

DOI: https://doi.org/10.1016/j.optmat.2020.110633

IF: 3.754

2021-01-01

Optical Materials

Abstract:<p>In this paper, the method of thin film preparation is pulsed laser deposition (PLD). ZnS:Co thin film was grown on sapphire and glass substrates at different temperatures (pressures) by PLD, and we studied a series of optical properties. It shows the crystal structure in XRD. The transmission spectral properties of the ZnS:Co film are very prominent. The transmittance of the film is over 90% between 800 and 6000 nm. The XRD results show the crystalline structure of the film on sapphire substrates and the amorphous structure of the film on glass, which is reflected in the guidance effect of the substrates. The high temperature environment is conducive to the formation of crystals. The best electrical properties of film with 600 °C proposed in the experiment. The research results play a key role in the application of ZnS:Co materials.</p>

materials science, multidisciplinary,optics
Structural, morphological, and optical bandgap properties of ZnS thin films: a case study on thickness dependence

Alireza Grayeli,Mohammad Sadeghi,Reza Shakoury,Robert Saraiva Matos,Henrique Duarte da Fonseca Filho,Ali Arman

DOI: https://doi.org/10.1007/s11082-024-07039-6

IF: 3

2024-06-03

Optical and Quantum Electronics

Abstract:Thin films of zinc sulfide (ZnS) with varying thicknesses have been successfully fabricated using radio frequency magnetron sputtering on glass substrates at a temperature of 300 K. Structural analysis via X-ray diffraction and selected area electron diffraction confirmed the presence of nanocrystalline cubic ZnS phases in the films. The crystallite size, determined from X-ray diffraction lines, ranged between 42 and 55 nm. We also explored the morphological attributes of these surfaces and observed significant changes in both grain shape and size. Our atomic force microscopy analyses revealed that the thinner film displayed a topography marked by thinner, elongated rough peaks. As the film thickness increased, these rough peaks gradually transformed into wider, flatter features. Additionally, the films exhibited distinct percolation properties, which were undeniably tied to the alterations in the shape and size of the ZnS grains on their surfaces. Thinner samples demonstrated more pronounced surface percolation (FS > 0.5) compared to thicker samples, which displayed reduced surface percolation. Furthermore, we noted that the 250 nm film predominantly showcased strongly multifractal 3D spatial patterns in contrast to the other films. Spectroscopic measurements in the UV–visible-near infrared region revealed high transparency across the 350–850 nm spectra, with a noticeable blue shift in the absorption edge. Calculations yielded direct allowed band gaps within the range of 3.69–3.85 eV. These results indicate that the optical properties of films can be tailored by their structural and morphological characteristics, thereby offering valuable guidance for their appropriate applications.

engineering, electrical & electronic,optics,quantum science & technology
[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

Ping Tang,Bing Li,Zhi Li,Liang Feng,Yuanqiang Cai,Jun Zheng,Jingquan Zhang,Wei Li,Wu Li-Li,Guanggen Zeng

2011-01-01

Abstract:In the present paper, SnS thin films were deposited by ultrasonic spray pyrolysis method. The influence of the three different precursor concentrations on the properties of SnS thin films was compared. XRD shows that when precursor solution is thiourea (0.5 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, there are SnS and SnO2 mixed phases; when precursor solution is thiourea (0.6 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, SnS phase is the dominant diffraction peak, although a certain amount of SnO2 phase is contained; when precursor solution is thiourea (0.7 mol x L(-1)) + tin tetrachloride (0.5 mol x L(-1)) + deionized water, thin film after being annealed is single SnS thin film with orthorhombic structure. SEM shows that films are uniform and dense. Furthermore, the particles of films are bigger when thiourea concentration is higher. Transmittance spectrum shows that the influence of precursor concentration on transmittance of thin films is less. Dark I-V and C-V tests of the devices show that junction characteristics of the devices were similar when prepared by three different concentrations of precursor solution, and as the thiourea concentration is higher, the carrier concentration is relatively larger.
Optical Properties of Zn Fine Particles Coated with ZnO And/or ZnS

JF Xu,JR Zhang,WP Ding,W Yang,GX Cheng,YW Du,J Zuo,CY Xu,YH Zhang,ZL Duc

DOI: https://doi.org/10.1016/s0038-1098(96)00368-7

IF: 1.934

1996-01-01

Solid State Communications

Abstract:Zn fine particles were prepared by the gas-evaporation technique with induction heating method. As-prepared Zn fine particles were treated in Na2S solution, we find ZnS was formed on the particle surface. Their optical properties have been studied by Raman scattering and fluorescence spectrophotometry.
Optical Properties of Sub-30 Nm-Thick ZnS Films Studied by Spectroscopic Ellipsometry

Cheng Wang,Chong Ma,Junbo He,Weiming Liu,Xudan Zhu,Shaobo Fang,Rongjun Zhang

DOI: https://doi.org/10.1016/j.mssp.2022.106454

IF: 4.1

2022-01-01

Materials Science in Semiconductor Processing

Abstract:The sub-30 nm-thick ZnS thin films with different thicknesses were deposited on Si substrates by electron beam evaporation (EBE). The thickness and optical constants of ZnS films were obtained by fitting spectroscopic ellipsometry (SE) data using Tauc-Lorentz Model. The variation of refractive index, extinction coefficient, optical band gap, the complex dielectric function of the samples with film thickness was analyzed. Due to the increase of film density, the refractive index increases with the thickness, and the extinction coefficient has the same trend. Due to the quantum size effect, the optical band gap decreases from 3.56 eV to 3.23 eV with increasing film thickness. Two peaks (E0 and E1) are obtained from the complex dielectric function spectrum, which most likely corresponds to the central energy of the exciton optical transition. Three critical points (CP) energies (EA, EB, and EC) and the types of interband optical transitions were extracted from the standard linear analysis of the second-order derivatives of the dielectric function. The three CPs energies have a significant thickness dependence, which is mainly attributed to quantum size effects. This result is beneficial for the design and application of photonic and optoelectronic devices with sub-30 nm-thick ZnS films.
Vacuum-evaporated PbS:0.03 Zn thin films with varying thicknesses for environmental applications

W.S. Mohamed,H.M. Ali,A.G. Adam,E. Kh Shokr

DOI: https://doi.org/10.1016/j.optmat.2024.114885

IF: 3.754

2024-01-16

Optical Materials

Abstract:In this research, we explore how the thickness of PbS-doped Zn thin films made through thermal vacuum evaporation affects their physical properties for environmental applications. Our x-ray diffraction (XRD) examination shows that the films consist of pure crystalline cubic PbS phase. Additionally, the energy-dispersive X-ray spectroscope (EDXS) provides confirmation that the synthesized products are of high purity. PbS films doped with Zn have spherical nanocrystals ranging from 130 nm to 250 nm in size, as observed through field emission (FE)-scanning electron microscopy (FE-SEM) analysis. The thickness of the film layer was found to correlate significantly with an increase in crystallite size and grain size, as validated by both XRD and FE-SEM analyses. The optical energy gap (E g ) of the thin films under examination exhibited variations in relation to their respective thickness. Bandgap energy was found to decrease from 1.66 eV to 1.2 eV as film thickness was increased from 50 nm to 250 nm. The Arrhenius law shows that films with varying thicknesses have thermally activated electrical conductivity and exhibit two conduction mechanisms. After analyzing the photocatalytic decomposition of methylene blue, it was observed that a thicker (PbS) 0.97 (Zn) 0.03 film with a larger grain size demonstrated superior photocatalytic efficiency (92 % after an exposure duration of 180 min). This is due to a smaller band gap and the presence of defect sites, which enhance catalytic reactions. The study presents a framework for researching the controllable structure, thickness, and composition of chalcogenide semiconductor thin films for environmental applications.

materials science, multidisciplinary,optics
Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization

Jinlin Ke,Shuzhen Chen,Ligang Song,Peng Zhang,Xingzhong Cao,Baoyi Wang,Rengang Zhang

DOI: https://doi.org/10.1016/j.spmi.2020.106671

IF: 3.22

2020-10-01

Superlattices and Microstructures

Abstract:<p>ZnS:Cu thin films were prepared by vulcanizing the sputtered Zn:Cu thin films at 500°С in sulfur vapor. The crystal structure, surface morphology, optical properties and microscopic defects of the films were characterized by XRD, SEM, UV–visible spectrophotometer, Raman spectroscopy and slow positron beam Doppler broadening spectroscopy, respectively. The XRD results showed that the ZnS:Cu thin films without any detectable impurities were a cubic structure, further confirmed by Raman spectra. The grain size of ZnS:Cu films was observed to increase from ∼150 nm to ∼300 nm with film thickness. Besides, apparent changes in the compactness and stoichiometry of the ZnS:Cu films were found with increasing the film thickness. These ZnS:Cu films exhibited a low transmittance in the visible range, with the band-gap energies of 3.52–3.62eV. Also, the effect of film thickness on microscopic defects of ZnS:Cu films were discussed in detail.</p>

physics, condensed matter
ZnS fabricated by spark plasma sintering and its properties

ZY Fang,W Pan,MH Fang,SL Shi,ZX Pan,RG Wang

2003-01-01

Rare Metal Materials and Engineering

Abstract:Zinc Sulfide is an excellent optical material due to its broadband transmission, i.e. from 0.4 mu m in in the visible to about 14 mu m in in the infrared, a high value of refractive index, good stability of refractive index and low scatter. It is used as windows and domes for lasers, thermal imaging system, and infrared detectors and sensors. ZnS fabricated by Spark Plasma Sintering (SPS) and the relative properties were reported. The infrared transmitting curve, phase composition and microstructure were studied, and the reasons bringing on the changes of phase structure and transmittance were analyzed. Being compared to the grain size of ZnS made by CVD method, the mechanical properties of SPS ZnS promised better due to its smaller grain size.
Nanocrystalline ZnS thin films by chemical bath deposition method and its characterization

S. M. Salim,A. H. Eid,A. M. Salem,H. M. Abou El‐khair,H. M. Abou El-khair

DOI: https://doi.org/10.1002/sia.5018

2012-04-18

Surface and Interface Analysis

Abstract:Zinc sulfide is a wide band gap semiconductor with a range of potential applications in optoelectronic devices. ZnS nanocrystalline thin films are prepared by chemical bath deposition on glass substrates. The chemical bath is an aqueous solution of zinc chloride, thiourea, ammonia and hydrazine. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aqueous ammonia and growth duration. The structural and the surface topography of ZnS films have been investigated by x‐ray diffraction and scanning electron microscope. The effect of annealing is studied. The x‐ray diffraction study reveals that both powder and thin films are polycrystalline in nature and have a composition corresponding to the cubic structure [ β ‐ZnS]. The films are very close to ZnS stoichiometry and no organic compounds, Zn(OH) 2 or ZnO species were observed as impurities. As it is also revealed from x‐ray diffraction analysis, the average size of these nanocrystallites is about 3 nm using Scherrer formula. SEM characterization shows that the sample surface consisted of small uniform grains and was free from pinholes. Obviously, it is evident that aggregation of grains on the substrate forms the thin film. The films showed a high transmission and a wide band gap of 3.83 eV. This value is larger than the typical value of the bulk ZnS (~3.6 eV), probably due to the quantum size effect as expected for the nanocrystalline nature of the films. The wide band gap of these films makes it possible to use them as window layer for solar cells. Copyright © 2012 John Wiley & Sons, Ltd.

chemistry, physical
Optical Properties of ZnS Nanowires Synthesized Via Simple Physical Evaporation

XH Zhang,Y Zhang,YP Song,Z Wang,DP Yu

DOI: https://doi.org/10.1016/j.physe.2004.12.022

IF: 3.369

2005-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Single-crystal ZnS nanowires were successfully synthesized in large quantities via simple thermal physical evaporation without any metallic catalyst. The microstructure and composition of ZnS nanowires were performed by transmission electron microscopy and high-resolution transmission electron microscopy. The Raman spectrum of wurtzite-2 H structure of ZnS nanowires showed the LO and TO mode: E1(LO)=A1(LO)=351cm-1, E1(TO)=A1(TO)=273cm-1. A new line at 338 cm−1 was found. We used the modified Bessel functions to describe the surface phonon mode of wire-structured materials originally. The theoretical result was in good agreement with the experimental data. Therefore the new line could be assigned to surface phonon mode. Furthermore, photoluminescence property of ZnS nanowires was also investigated: the green emission band around 515 nm could be attributed to S vacancies in ZnS.
Structural and Optical Properties of ZnO Thin Films Prepared by Sol–gel Method with Different Thickness

Linhua Xu,Xiangyin Li,Yulin Chen,Fei Xu

DOI: https://doi.org/10.1016/j.apsusc.2010.11.170

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:In this work, ZnO thin films with different thickness were prepared by sol-gel method on glass substrates and the structural and optical properties of these films were studied by X-ray diffractometer, atomic force microscope, UV-visible spectrophotometer, ellipsometer and fluorophotometer, respectively. The structural analyses show that all the samples have a wurtzite structure and are preferentially oriented along the c-axis perpendicular to the substrate surface. The growth process of highly c-axis oriented ZnO thin films derived from sol-gel method is a self-template process. With the increase of film thickness, the structural disorder decreases and the crystalline quality of the films is gradually improved. A transition of crystal growth mode from vertical growth to lateral growth is observed and the transition point is found between 270 and 360 nm thickness. The optical analyses show that with the increase of film thickness, both the refractive index and ultraviolet emission intensity are improved. However, the transmittance in the visible range is hardly influenced by the film thickness, and the averages are all above 80%. (C) 2010 Elsevier B. V. All rights reserved.
Optical-Properties of Extremely Thin-Films - Studies Using Atr Techniques

JJ XU,JF TANG

DOI: https://doi.org/10.1364/ao.28.002925

IF: 1.9

1989-01-01

Applied Optics

Abstract:The optical constants and optical properties of extremely thin ZnS, SiO(2), Al, and Ag films are studied and compared by attenuated total reflection (ATR) techniques. The optical constants and optical absorptance as a function of film thickness are measured. The experimental results agree well with theoretical prediction. It is found that there is no discontinuity in optical constants and absorptance when an extremely thin layer changes from isolated islands to a continuous film for all the measured materials. The critical thicknesses at which they form continuous films show great differences for the various materials and deposition methods. The dependence of absorptance on thickness of extremely thin layers is studied experimentally and theoretically.
Electronic and Optical Properties of CdS Films Deposited by Evaporation

L. Huang,Z. L. Wei,F. M. Zhang,X. S. Wu

DOI: https://doi.org/10.1016/j.jallcom.2015.07.041

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:CdS films grown by thermal evaporation on glass substrate under ultra-high vacuum are prepared with varying the growth temperature and atmosphere environment. The minimum resistivity of the films is as low as 2.0 Omega.cm, and the carrier density even reaches 1.6 x 10(18) cm(-3), which is much less than that prepared by the chemical bath deposition (CBD) method. The transmittance and band gap increase with the set the argon atmosphere and the growth temperature in the optimum value. Our results indicate the CdS films grown by evaporation at high vacuum may be more suitable for the application in optoelectronic devices, such as the solar cell materials. (C) 2015 Elsevier B.V. All rights reserved.
The Optical Properties of ZnS Dependent on Different Fabricating Process

Fang Zhenyi,Pan Wei,Zhu Haifeng,Zhang Liqiang,Xiao Hongtao,Li Zitao

DOI: https://doi.org/10.3321/j.issn:1002-185X.2005.z2.123

2005-01-01

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

Abstract:Zinc Sulfide (ZnS) with pretty good infrared transmission was fabricated by hot press at vacuum, H2S-method chemical vapour deposition and S-method chemical vapour deposition, respectively. The measurements of transmitting spectra showed that ZnS made by S-method chemical vapour deposition had the highest transmittance in the wavelength from visible to long wave infrared. In this paper, the influence of different processing on the microstructure of as-fabricated ZnS, and hence the influence on optical performance, were discussed. Hot isostatic pressing (HIP) was adopted to treat ZnS made by the three different process method respectively. It is found that HIP treatment can improve the optical transmittance of ZnS, and the effecting mechanism of HIP was investigated.

Property Study of ZnS Thin Films Prepared by Vacuum Evaporation

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

A Study of the Properties of RF Sputtered MgXZn1-XO Thin Films

Study on structural and optical properties of Sn-doped ZnO nanoarrays

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Enhancing crystalline/optical quality and electrical properties of the Co-doped ZnS thin films a comparative study

Structural, morphological, and optical bandgap properties of ZnS thin films: a case study on thickness dependence

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

Optical Properties of Zn Fine Particles Coated with ZnO And/or ZnS

Optical Properties of Sub-30 Nm-Thick ZnS Films Studied by Spectroscopic Ellipsometry

Vacuum-evaporated PbS:0.03 Zn thin films with varying thicknesses for environmental applications

Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization

ZnS fabricated by spark plasma sintering and its properties

Nanocrystalline ZnS thin films by chemical bath deposition method and its characterization

Optical Properties of ZnS Nanowires Synthesized Via Simple Physical Evaporation

Structural and Optical Properties of ZnO Thin Films Prepared by Sol–gel Method with Different Thickness

Optical-Properties of Extremely Thin-Films - Studies Using Atr Techniques

Electronic and Optical Properties of CdS Films Deposited by Evaporation

The Optical Properties of ZnS Dependent on Different Fabricating Process