16Nm Resolution Lithography Using Ultra-Small Gap Bowtie Apertures

Jin Qin,Liang Wang

DOI: https://doi.org/10.1364/cleopr.2018.th5a.6

2018-01-01

Abstract:Here, we report a novel method to fabricate bowtie aperture with sub-15 nm gap. Utilizing a passive flexure stage for contact control, we present our recent lithography results with a record 16 nm resolution (FWHM).

What problem does this paper attempt to address?

Near Field Optical Lithography Using Ultra-Small Gap Bowtie Apertures

Liang Wang,Jin Qin

DOI: https://doi.org/10.1117/12.2504905

2019-01-01

Abstract:Near filed optical lithography has been a promising alternative to photolithography for its high resolution, low cost and high throughput. Bowtie aperture, one type of nanoscale ridge aperture, is widely used in near filed optical lithography. However, the bowtie structure milled by focused ion beam (FIB) usually suffers from non-vertical sidewall with taper and rounded corner due to Gaussian ion beam profile and redeposition effects. Here, we report a novel method to fabricate bowtie aperture with sub-15 nm gap, producing highly confined electric near-field by localized surface plasmon (LSP) excitation and nanofocusing of the closely tapered gap. Utilizing a passive flexure stage for contact control, we present our recent lithography results with a record 20 nm resolution (FWHM).
Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

Chenliang Ding,Xi Liu,Qiulan Liu,Dazhao Zhu,Mengdi Luo,Xiujun Gao,Zhenyao Yang,Qiuyuan Sun,Quanli Qian,Xiaoming Shen,Chun Cao,Shangting You,Liang Xu,Minfei He,Yong Liu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1002/lpor.202300645

2024-01-01

LASER & PHOTONICS REVIEWS

Abstract:Improving the 3D resolution is a decisive step in the transition of direct laser writing from being limited to research use to being a powerful tool. Three-color (3CL) lithography is expected to result in significantly higher resolution with two-color lasers initiating polymerization in two steps and one-color laser inhibiting polymerization. However, the 3CL process increases the complexity of the system and makes the influence of chromatic aberration worse which leads to non-ideal writing results, which is approximate to 80 nm linewidth (approximate to lambda/10) at present. In this study, the 3CL lithography is improved by introducing almost one color (1CL) instead of three colors to achieve subdiffraction 3D nanolithography based on two-photon two-step absorption and photoinhibition (T(2)A-PI). Using benzil as a photoinitiator, a sub-30 nm (<lambda/17.5) lateral feature size, minimum 80 nm lateral, and 160 nm axial pitches are achieved, which, to our knowledge, is the best to be fabricated using the laser in the visible region. 3D woodpile photonic crystals and other high-quality nanostructures are fabricated, demonstrating the unique advantages over existing direct laser writing technologies.
Sub-diffraction Optical Beam Lithography Based on a Center-Non-zero Depletion Laser

Chenyi Su,Chenliang Ding,Zhenyao Yang,Chun Cao,Yiwei Qiu,Dazhao Zhu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1364/ol.504691

IF: 3.6

2024-01-01

Optics Letters

Abstract:Photoinhibition (PI) mechanisms have been introduced in nanofabrication which allows breaking the diffraction limit by large factors. Donut-shaped laser is usually selected as a depletion beam to reduce linewidth, but the parasitic process has made the results of the experiment less than expected. As a result, the linewidth is difficult to achieve below 50 nm with 780 nm femtosecond and 532 nm continuous-wave lasers. Here, we propose a new, to the best of our knowledge, method based on a center-non-zero (CNZ) depletion laser to further reduce linewidth. By constructing a smaller zone of action under the condition of keeping the maximum depletion intensity constant, a minimum linewidth of 30 nm (λ / 26) was achieved. Two ways to construct CNZ spots were discussed and experimented, and the results show the advantages of our method to reduce the parasitic process to further improve the writing resolution.
Numerical and experimental study of near-field scanning optical lithography using nanoscale bowtie apertures with ultrasmall gap size

Li Ding,Jin Qin,Yang Chen,Liang Wang

DOI: https://doi.org/10.1117/1.JMM.15.3.031611

2016-01-01

Abstract:Nanoscale ridge apertures have been demonstrated to be applied for high-resolution lithography. We performed a numerical study of nanoscale bowtie apertures with different outline dimensions and gap sizes to analyze their detailed field distribution for near-field scanning optical lithography (NSOL). It is found that the high image contrast, which is necessary for good quality lithography, is obtained in the near-field region and decays quickly with increasing distance. Furthermore, a smaller gap size achieves higher image contrast and deeper depth of focus. With the NSOL system, static and scanning lithography experiments are conducted. Combined with the passive flexure stage for contact control, we achieved 18-nm lithography resolution. (C) 2016 Society of PhotoOptical Instrumentation Engineers (SPIE)
Single-color Peripheral Photoinhibition Lithography of Nanophotonic Structures

Minfei He,Zhimin Zhang,Chun Cao,Yiwei Qiu,Xiaoming Shen,Guozun Zhou,Zixin Cai,Xinjie Sun,Xin He,Liang Xu,Xi Liu,Chenliang Ding,Yaoyu Cao,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1186/s43074-022-00072-2

IF: 16.5

2022-01-01

PhotoniX

Abstract:Advances in direct laser writing to attain super-resolution are required to improve fabrication performance and develop potential applications for nanophotonics. In this study, a novel technique using single-color peripheral photoinhibition lithography was developed to improve the resolution of direct laser writing while preventing the chromatic aberration characteristics of conventional multicolor photoinhibition lithography, thus offering a robust tool for fabricating 2D and 3D nanophotonic structures. A minimal feature size of 36 nm and a resolution of 140 nm were achieved with a writing speed that was at least 10 times faster than existing photoinhibition lithography. Super-resolution and fast scanning enable the fabrication of spin-decoupled metasurfaces in the visible range within a printing duration of a few minutes. Finally, a subwavelength photonic crystal with a near-ultraviolet structural color was fabricated to demonstrate the potential of 3D printing. This technique is a flexible and reliable tool for fabricating ultracompact optical devices.
Photolithography Using Lateral Surface of Nanofibers

Zhen Wei,Jian Bai,Chen Wang,Neibin Hu,Jianfeng Xu,Yuan Yao,Yiyong Liang,Kaiwei Wang,Changlun Hou,Guoguang Yang

DOI: https://doi.org/10.1016/j.optcom.2014.11.071

IF: 2.4

2014-01-01

Optics Communications

Abstract:To enhance the resolution of photolithography, we demonstrate a technique that confines the exposure area by using lateral surface of nanofibers. Due to evanescent wave and optical tunneling effect, the interaction area of optical energy and the photoresist layer is confined into sub-wavelength dimension. Illuminated by a He–Cd laser device with a 442nm wavelength, exposed lines with sub-wavelength width were obtained by using a nanofiber with a 247nm diameter. Furthermore, curve lines and annular lines were obtained by manipulating the shape of nanofibers on the photoresist layer.
Development of Next-Generation Nanolithography Methods to Break the Optical Diffraction Limit

Huiwen Luo,Liang Wang,Jin Qin,Li Ding

DOI: https://doi.org/10.1117/12.2240741

2016-01-01

Abstract:Photolithography has been one of the most important technologies in modern society, especially in semiconductor industry. However, due to the limitation of optical diffraction, this technique becomes more and more complex and expensive. In this paper, we experimentally study two promising techniques, near-field scanning optical lithography and nanoimprint lithography, which both have been proved to be alternatives to photolithography, and achieve sub-wavelength resolution. Taking advantage of bowtie apertures, near-field scanning optical lithography can achieve high resolution beyond the Rayleigh diffractive limit. Here, we report a novel method to fabricate bowtie aperture with sub-15 nm gap, producing highly confined electric near-field by localized surface plasmon (LSP) excitation and nanofocusing of the closely tapered gap, and obtain lithography results with 21 nm resolution (FWHM). We also develop a new plate-to-roll nanoimprint lithography (P2RNIL). Compared with plate-to-plate nanoimprint lithography (P2PNIL) and roll-to-plate nanoimprint lithography (R2PNIL), it avoids cylinder template fabrication in P2RNIL and significantly improves the productivity in P2PNIL. Our P2RNIL system can realize large-area nanoimprint continuously with high resolution and high speed.
Subwavelength-resolution Direct Writing Using Submicron-Diameter Fibers

Feng Tian,Guoguang Yang,Jian Bai,Qiaofen Zhou,Changlun Hou,Jianfeng Xii,Yiyong Liang

DOI: https://doi.org/10.3788/col20100803.0326

IF: 2.56

2010-01-01

Chinese Optics Letters

Abstract:A novel direct writing technique using submicron-diameter fibers is presented. This technique adopts contact mode in the process of writing, and submicron lines with different widths have been obtained. Experimental results demonstrate that the resolution of this technique can be smaller than the exposure wavelength of 442 nm, and 380-nm-wide line is achieved. In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.
40 Nm Thick Photoresist-Compatible Plasmonic Nanolithography Using a Bowtie Aperture Combined with a Metal-Insulator-metal Structure

Zhongjun Jiang,Huiwen Luo,Songpo Guo,Liang Wang

DOI: https://doi.org/10.1364/ol.44.000783

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, 40 nm thick photoresist (PR)-compatible plasmonic nanolithography using a bowtie aperture incorporated with a metal-insulator-metal (MIM) structure is studied numerically and experimentally. The simulation results show that with a 20 nm index-matching layer, the light field that exits from the bowtie aperture penetrates into a 40 nm thick PR by using a MIM configuration. Imaging contrast calculations indicate that sub-45 nm resolution with an exposure depth in the order of tens of nanometers is achievable, which is confirmed by the experimental results. In addition, the ability to generate high-resolution, complex patterns using this technique via scanning is demonstrated. This brings plasmonic nanolithography using a bowtie aperture one step closer to practical applications.
Fabrication of 5 Nm Linewidth and 14 Nm Pitch Features by Nanoimprint Lithography

MD Austin,HX Ge,W Wu,MT Li,ZN Yu,D Wasserman,SA Lyon,SY Chou

DOI: https://doi.org/10.1063/1.1766071

IF: 4

2004-01-01

Applied Physics Letters

Abstract:We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5nm linewidth and 14nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4in. wafer were demonstrated.
Forty-Nanometer Plasmonic Lithography Resolution with Two-Stage Bowtie Lens

Yan Meng,Ruiguang Peng,Jie Cheng,Yonggang Meng,Qian Zhao

DOI: https://doi.org/10.3390/mi14112037

IF: 3.4

2023-01-01

Micromachines

Abstract:Optical imaging and photolithography hold the promise of extensive applications in the branch of nano-electronics, metrology, and the intricate domain of single-molecule biology. Nonetheless, the phenomenon of light diffraction imposes a foundational constraint upon optical resolution, thus presenting a significant barrier to the downscaling aspirations of nanoscale fabrication. The strategic utilization of surface plasmons has emerged as an avenue to overcome this diffraction-limit problem, leveraging their inherent wavelengths. In this study, we designed a pioneering and two-staged resolution, by adeptly compressing optical energy at profound sub-wavelength dimensions, achieved through the combination of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). By synergistically combining this plasmonic lens with parallel patterning technology, this economic framework not only improves the throughput capabilities of prevalent photolithography but also serves as an innovative pathway towards the next generation of semiconductor fabrication.
Parallel Optical Nanolithography Using Nanoscale Bowtie Aperture Array.

Sreemanth M. V. Uppuluri,Edward C. Kinzel,Yan Li,Xianfan Xu

DOI: https://doi.org/10.1364/oe.18.007369

IF: 3.8

2010-01-01

Optics Express

Abstract:We report results of parallel optical nanolithography using nanoscale bowtie aperture array. These nanoscale bowtie aperture arrays are used to focus a laser beam into multiple nanoscale light spots for parallel nano-lithography. Our work employed a frequency-tripled diode-pumped solid state (DPSS) laser (lambda = 355 nm) and Shipley S1805 photoresist. An interference-based optical alignment system was employed to position the bowtie aperture arrays with the photoresist surface. Nanoscale direct-writing of sub-100nm features in photoresist in parallel is demonstrated.
Fabrication of Sub-10 Nm Gap by Using Electron Beam Lithography

Bingnan Yan,Xuecou Tu,Chen Zhang,Wohu Wang,Ziyao Ye,Xiaoqing Jia,Lin Kang,Peiheng Wu

DOI: https://doi.org/10.1109/ivec56627.2023.10156935

2023-01-01

Abstract:Nanogap is an important research tool in the field of sensitive photoelectric sensors. Based on the surface plasmon resonance effect, the local electromagnetic field generated by the interaction between light and matter in the nanogap will be greatly enhanced, which can realize more applications of nano-functional devices. Fabricating sub-10 nm nanogaps precisely is a difficult and laborious work due to the operational accuracy of the Electron beam lithography (EBL). In this work, we propose a new manufacturing process for the nanogap electrode pairs. The shape and size of electrode pairs were set overlapping/zero spacing/non-overlapping strategy in the layout pattern at different angles. By using electron beam evaporation technology, the adhesions of electrode pair tips with sub-10 nm gaps were mitigated. Our study demonstrates a reliable manufacturing process for sub-10 nm gaps.
Direct Laser Writing Breaking Diffraction Barrier Based on Two-Focus Parallel Peripheral-Photoinhibition Lithography

Dazhao Zhu,Liang Xu,Chenliang Ding,Zhenyao Yang,Yiwei Qiu,Chun Cao,Hongyang He,Jiawei Chen,Mengbo Tang,Lanxin Zhan,Xiaoyi Zhang,Qiuyuan Sun,Chengpeng Ma,Zhen Wei,Wenjie Liu,Xiang Fu,Cuifang Kuang,Haifeng Li,Xu Liu

DOI: https://doi.org/10.1117/1.ap.4.6.066002

IF: 13.582

2022-01-01

Advanced Photonics

Abstract:Direct laser writing（DLW） enables arbitrary three-dimensional nanofabrication. However, the diffraction limit poses a major obstacle for realizing nanometer-scale features. Furthermore, it is challenging to improve the fabrication efficiency using the currently prevalent single-focal-spot systems, which cannot perform high-throughput lithography. To overcome these challenges, a parallel peripheral-photoinhibition lithography system with a sub-40-nm two-dimensional feature size and a sub-20-nm suspended line width was developed in our study, based on two-photon polymerization DLW. The lithography efficiency of the developed system is twice that of conventional systems for both uniform and complex structures. The proposed system facilitates the realization of portable DLW with a higher resolution and throughput.
Fabrication of bowtie aperture antennas for producing sub-20 nm optical spots.

Yang Chen,Jianfeng Chen,Xianfan Xu,Jiaru Chu

DOI: https://doi.org/10.1364/OE.23.009093

IF: 3.8

2015-01-01

Optics Express

Abstract:Bowtie aperture antennas are known to generate sub-diffraction limited optical spots in the visible and near-infrared frequencies, which can be applied to many areas. Regular bowtie apertures fabricated by FIB suffer from tapered sidewall and rounded corner, which degrade its optical enhancement and localization. In this work, a new fabrication method is demonstrated to manufacture bowtie aperture antennas which can produce optical spots with lateral size smaller than 20 nm. We also employ numerical simulations to compute the near-field distribution on the surface of the bowtie aperture with topography extracted from the fabrication antennas. The near-field distribution measured by s-NSOM agrees well with the simulation and confirms the improved near-field localization of our bowtie aperture. This new fabrication method can be applied to other types of ridged apertures, which promises wide applications of deep sub-diffraction limited optical spots in many areas. (C) 2015 Optical Society of America
Sub-micrometer Direct Laser Writing Using an Optimized Binary-Amplitude Zone Plate Lens.

Kai Xu,Jin Qin,Liang Wang

DOI: https://doi.org/10.1364/ol.439623

IF: 3.6

2021-01-01

Optics Letters

Abstract:Direct laser writing (DLW) is a versatile and reliable lithography method widely used in many micro and nano fabrication areas. However, the resolution of DLW is limited by the optical diffraction limit. Many methods have been proposed to improve the lithography resolution, but with either high cost or increasing the complexity of the system. Here, we propose a high numerical aperture binary-amplitude-type zone plate lens that can achieve a sub-wavelength focal spot with a large depth of focus and long working distance. The critical dimension of such a lens is set at micrometer scale for ease of fabrication. By integrating the as-designed planar lens into a DLW system, we experimentally demonstrate less than 300 nm lithography resolution with exposure depth larger than 500 nm. Our results show the possibility of writing sub-micrometer scale structures with the integration of a planar lens into the DLW system, which enables miniaturization and compactness of lithography instruments for many applications.
Imprint Lithography with 25-Nanometer Resolution

Stephen Y. Chou,Peter R. Krauss,Preston J. Renstrom

DOI: https://doi.org/10.1126/science.272.5258.85

IF: 56.9

1996-04-05

Science

Abstract:A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.

multidisciplinary sciences
Contact Optical Nanolithography Using Nanoscale C-shaped Apertures

Liang Wang,Eric X. Jin,Sreemanth M. Uppuluri,Xianfan Xu

DOI: https://doi.org/10.1364/oe.14.009902

IF: 3.8

2006-01-01

Optics Express

Abstract:C-shaped ridge apertures are used in contact nanolithography to achieve nanometer scale resolution. Lithography results demonstrated that holes as small as 60 nm can be produced in the photoresist by illuminating the apertures with a 355 nm laser beam. Experiments are also performed using comparable square and rectangular apertures. Results show enhanced transmission and light concentration of C apertures compared to the apertures with regular shapes. Finite difference time domain simulations are used to design the apertures and explain the experimental results.
5 Nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography.

Liang Qin,Yuanqing Huang,Feng Xia,Lei Wang,Jiqiang Ning,Hongmei Chen,Xu Wang,Wei Zhang,Yong Peng,Qian Liu,Ziyang Zhang

DOI: https://doi.org/10.1021/acs.nanolett.0c00978

IF: 10.8

2020-01-01

Nano Letters

Abstract:Development of a reliable, mass-production and cost-effective sub-10 nm nanofabrication technology leads to unprecedented level of integration of photonic devices. In this work, we describe the development of a laser direct writing (LDW) lithography technique with ~5 nm feature size, which is about 1/55 of the optical diffraction limit of the LDW system (405 nm laser and 0.9 NA objective), and the realization of 5 nm nanogap electrodes. This LDW lithography exhibits an attractive capability of well site-control and mass-production of ~5×10^5 nanogap electrodes per hour breaking the trade-off between resolution and throughput in a nanofabrication technique. Nano-sensing chips have been demonstrated based on the as-obtained nanogap electrodes, where controllable surface enhancement Raman scattering of Rhodamine 6G has been realized via adjusting the gap width and especially the applied bias voltages. Our results establish that such low-cost and high-efficient lithography technology has great potential to fabricate compact integrated circuits and biochips.
Multiple Patterning Bi-Line/tri-line Structure at Limiting Resolution for 7 Nm by Negative Tone Development of ArF Immersion Lithography

Jinhao Zhu,Liwan Yue,Qiang Wu,Yanli Li

DOI: https://doi.org/10.1016/j.aej.2024.09.114

IF: 6.626

2024-01-01

Alexandria Engineering Journal

Abstract:Since the advanced Integrated Circuit (IC) manufacturing process has reached the 14 nm technology node and beyond, the pattern size of integrated circuits has become much smaller than the theoretical minimum resolution of lithography. In order to further extend the performance of immersion lithography, the industry introduces Multiple Patterning Technology (MPT) and Negative Tone Development (NTD) lithography technology. MPT and NTD lithography have greatly improved the process window of immersion lithography, enabling ArF immersion lithography to extend to 7 nm or even 5 nm technology nodes and below. However, MPT still has limited ability to improve the process window for some special patterns. For example，for the poly gate process in Front End of Line (FEOL) or the metal routing process in Back End of Line (BEOL), IC design often uses a special kind of patterns, such as the bi-line or tri-line structures. Due to the fact that some type of the bi-line/tri-line structures have a semi-dense pattern on each side, the process window of these patterns are relatively narrow, making them difficult to manufacture. This paper focuses on the patterning technology scheme of bi-line/tri-line structures in IC design under the diffraction limit of 193 nm immersion lithography. This paper explores the solution for bi-line/tri-line patterns through mask split strategy and NTD lithography process simulation with a physical model, including illumination conditions, Optical Proximity Correction (OPC) methods, and photoresist process parameter design. This study provides a reference scheme for subsequent NTD process development and patterning technology, as well as a reference idea for IC design methods.

16Nm Resolution Lithography Using Ultra-Small Gap Bowtie Apertures

Near Field Optical Lithography Using Ultra-Small Gap Bowtie Apertures

Subdiffraction 3D Nanolithography by Two‐Photon Two‐Step Absorption and Photoinhibition

Sub-diffraction Optical Beam Lithography Based on a Center-Non-zero Depletion Laser

Numerical and experimental study of near-field scanning optical lithography using nanoscale bowtie apertures with ultrasmall gap size

Single-color Peripheral Photoinhibition Lithography of Nanophotonic Structures

Photolithography Using Lateral Surface of Nanofibers

Development of Next-Generation Nanolithography Methods to Break the Optical Diffraction Limit

Subwavelength-resolution Direct Writing Using Submicron-Diameter Fibers

40 Nm Thick Photoresist-Compatible Plasmonic Nanolithography Using a Bowtie Aperture Combined with a Metal-Insulator-metal Structure

Fabrication of 5 Nm Linewidth and 14 Nm Pitch Features by Nanoimprint Lithography

Forty-Nanometer Plasmonic Lithography Resolution with Two-Stage Bowtie Lens

Parallel Optical Nanolithography Using Nanoscale Bowtie Aperture Array.

Fabrication of Sub-10 Nm Gap by Using Electron Beam Lithography

Direct Laser Writing Breaking Diffraction Barrier Based on Two-Focus Parallel Peripheral-Photoinhibition Lithography

Fabrication of bowtie aperture antennas for producing sub-20 nm optical spots.

Sub-micrometer Direct Laser Writing Using an Optimized Binary-Amplitude Zone Plate Lens.

Imprint Lithography with 25-Nanometer Resolution

Contact Optical Nanolithography Using Nanoscale C-shaped Apertures

5 Nm Nanogap Electrodes and Arrays by Super-resolution Laser Lithography.

Multiple Patterning Bi-Line/tri-line Structure at Limiting Resolution for 7 Nm by Negative Tone Development of ArF Immersion Lithography