Coordination of Yttrium in Rf-Sputtered Amorphous Films in the System SiO2–Y2O3

Takeshi Shinoda,Teiichi Hanada,Setsuhisa Tanabe,Tao Yao
DOI: https://doi.org/10.1016/s0022-3093(97)00419-5
IF: 4.458
1997-01-01
Journal of Non-Crystalline Solids
Abstract:Extended X-ray absorption fine structure near the Y K-edge was measured to determine the coordination state of yttrium ions in amorphous films in the system SiO2–Y2O3 prepared by rf-sputtering. The coordination number of yttrium ions in the amorphous films with <30 mol% Y2O3 content was greater than six, but it approached six, dependent on the Y2O3 content, in the region >35 mol% Y2O3 content. That is, the region between about 35 mol% and about 50 mol% Y2O3 content is the transition stage of the change of the coordination number of yttrium ions. This result of the coordination state of yttrium ions has given a direct proof for the prediction that the coordination state of yttrium ions changes at about 45 mol% Y2O3 content in SiO2–Y2O3 amorphous films, which was obtained from our previous study about their physical properties, such as density and elastic moduli.
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