Constructing 1D/0D Sb2S3/Cd0.6Zn0.4S S-scheme Heterojunction by Vapor Transport Deposition and In-Situ Hydrothermal Strategy Towards Photoelectrochemical Water Splitting

Dekang Liu,Wei Jin,Liyuan Zhang,Qiujie Li,Qian Sun,Yishan Wang,Xiaoyun Hu,Hui Miao

DOI: https://doi.org/10.1016/j.jallcom.2023.172926

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:Antimony sulfide (Sb2S3) is widely used in photocatalysts and photovoltaic cells because of its abundant reserves, low toxicity, environmental friendliness, narrow band gap, and high light absorption capacity. Sb2S3 shows a quasi-one-dimensional structure composed of [Sb4S6]n nanoribbons, a lot of reported studies are focused on preparing Sb2S3 with [hk1] oriented dominant growth to improve the photogenerated carrier transport capacity of Sb2S3. However, there is relatively few research on the preparation of [hk1] oriented rod-like Sb2S3 by vapor transport deposition (VTD) method. In this work, the VTD method was used to prepare Sb2S3 with [hk1] oriented growth on the FTO substrate, and then composite with the ternary solid solution CdxZn1_xS. Finally, a novel Sb2S3/Cd0.6Zn0.4S S-scheme heterojunction with rod-like core-shell structure was successfully constructed, which could effectively improve the photoelectrochemical properties. Because the solid solution component x is adjustable, that is, CdxZn1_xS has continuously adjustable band gap width and energy level position, the Sb2S3/ CdxZn1_xS heterojunction type can be regulated from Type-II to S-scheme. Photoelectrochemical (PEC) tests indicated that the composite photoanode Sb2S3/Cd0.6Zn0.4S achieved a higher photocurrent density (2.54 mA center dot cm_ 2, 1.23 V vs. RHE), which is about 4.31 times that of pure Sb2S3 nanorod photoanode (0.59 mA center dot cm_ 2, 1.23 V vs. RHE).