Construction of direct Z-scheme SnS@In2S3 core-shell heterojunction and its photoelectrochemical properties

Hui Miao,Wenjing Zhang,Wenwan Zhang,Xinyang Liu,Xiaoyun Hu
DOI: https://doi.org/10.1016/j.mtcomm.2023.106871
IF: 3.8
2023-08-01
Materials Today Communications
Abstract:In2S3 has been widely concerned by scientists because of its excellent photosensitivity, good electrical conductivity and stable chemical properties. However, the application of In2S3 in the field of photoelectrochemical water splitting is still limited. In this work, we modified narrow band gap semiconductor SnS under In2S3 nanosheets to regulate the interface, and constructed direct Z-scheme SnS@In2S3 core-shell heterojunction with significantly enhanced photoelectrochemical properties. The photocurrent density of the heterojunction could reach 194 μA cm−2, which was 5 times that of monomer In2S3, and the electrochemically active surface area expanded 10 times. Various characterization and test results showed that the expansion of solar spectral absorption range, the inhibition of photogenerated electron-hole pairs recombination, and the increase of active sites effectively improved the generation, separation and reaction of carriers, which were the main reasons for the enhancement of photoelectrochemical performance. This study has extended a new idea for the application of In2S3-based photoanode in the field of photoelectrochemical water splitting.
materials science, multidisciplinary
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