Abstract:For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.

A Systematic Study on Self-Catalyzed Growth of InAs/GaSb Axial Heterostructured Nanowires by MOCVD

Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

New growth mechanism of InAs nanowires array in selective-area growth by MOCVD

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Growth and Characterization of Gaas/Inxga1-Xas/Gaas Axial Heterostructure Nanowires by Mocvd

New Growth Mechanism of InAs-GaSb Core-Shell Nanowires with Polygonal Triangular Pyramids and Quantum Dots Grown by MOCVD

Growth and Characterization of GaAs/InxGa1−xAs/GaAs Axial Nanowire Heterostructures with Symmetrical Heterointerfaces

A Theoretical and Experimental Study on Effect of Growth Time on Self-Catalyzed InAs Nanowires

Hetero-epitaxial Growth and Mechanism of One-Dimensional InSb Nanostructures on GaAs Substrate by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

InAs/GaSb Core-Shell Nanowires Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth and characterization of GaAs/In χ Ga 1-χ As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

The Self-Seeded Growth of InAsSb Nanowires on Silicon by Metal-Organic Vapor Phase Epitaxy

Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires