Abstract:Based on the processes and characteristics of secondary electron emission and the formula for the yield due to primary electrons hitting on semiconductors and insulators, the universal formula for maximum yield [Formula: see text] due to primary electrons hitting on semiconductors and insulators was deduced, where [Formula: see text] is the maximum ratio of the number of secondary electrons produced by primary electrons to the number of primary electrons. On the basis of the formulae for primary range in different energy ranges of [Formula: see text], characteristics of secondary electron emission and the deduced universal formula for [Formula: see text], the formulae for [Formula: see text] in different energy ranges of [Formula: see text] were deduced, where [Formula: see text] is the primary incident energy at which secondary electron yields from semiconductors and insulators, [Formula: see text], are maximized to maximum secondary electron yields from semiconductors and insulators, [Formula: see text]; and [Formula: see text] is the maximum ratio of the number of total secondary electrons produced by primary electrons and backscattered electrons to the number of primary electrons. According to the deduced formulae for [Formula: see text], the relationship among [Formula: see text], [Formula: see text] and high-energy back-scattering coefficient [Formula: see text], the formulae for parameters of [Formula: see text] and the experimental data as well as the formulae for [Formula: see text] in different energy ranges of [Formula: see text] as a function of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, where [Formula: see text] and [Formula: see text] are the original electron affinity and the width of forbidden band, respectively. The scattering of [Formula: see text] was analyzed, and calculated [Formula: see text] values were compared with the values measured experimentally. It was concluded that the deduced formulae for [Formula: see text] were found to be universal for [Formula: see text].

Emission of the Backscattered Electron in the Energy Range of 20 To100 Kev

Quantifying the Coherent Backscatter Enhancement of Non-Spherical Particles with Discrete Dipole Approximation.

Model of Secondary Electron Emission at High Incident Electron Energy for Metal

Formulae For Secondary Electron Yield And The Ratio Of The Average Number Of Secondary Electrons Generated By A Single Backscattered Electron To That Generated By A Single Primary Electron

A Calculation of Backscattering Factor Database for Quantitative Analysis by Auger Electron Spectroscopy

FORMULAE FOR MAXIMUM ESCAPE DEPTH OF REDIFFUSED ELECTRONS AND BACKSCATTERING COEFFICIENT OF METAL FILMS

Monte Carlo Study of Backscattering and Secondary Electron Generation

Theoretical study of secondary electron yield in energy range of 10~30 keV

Parameters of the secondary electron yield from metal

Two Contributions to the Ratio of the Mean Secondary Electron Generation of Backscattered Electrons to Primary Electrons at High Electron Energy

Electron Backscattering Coefficients of Molybdenum and Tungsten Based on the Monte Carlo Simulations

Formulae for the Secondary Electron Yield and Total Stopping Power from 0.8 Kev to 10 Kev for Metals

A Synthetic Semi-Empirical Physical Model of Secondary Electron Yield of Metals under E-Beam Irradiation

Energy Spectra of Backscattered Electrons in Auger Electron Spectroscopy: Comparison of Monte Carlo Simulations with Experiment

Monte Carlo Calculation Of The Energy Distribution Of Backscattered Electrons

Formula for Secondary Electron Yield from Metals

MAXIMUM SECONDARY ELECTRON YIELD AND PARAMETERS OF SECONDARY ELECTRON YIELD OF METALS

Monte Carlo Calculation of Electron Rutherford Backscattering Spectra and High-Energy Reflection Electron Energy Loss Spectra

Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle Θ

Maximum Secondary Electron Yields from Semiconductors and Insulators

Analytical Modeling for Probe Impedance Using Reflection and Transmission Theory in Eddy Current Testing