First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers
Yi Peng,Hongyan Tian,Mingjia Yao,Xuli Li,Xinyi Tang,Ju Jiao,Qianqian Zhu,Juexian Cao
DOI: https://doi.org/10.1038/s41598-024-74256-0
IF: 4.6
2024-09-29
Scientific Reports
Abstract:The recently synthesized monolayer MoSi 2 N 4 ( Science 2020, 369, 367) exhibits exceptional environmental stability, a moderate band gap, and excellent mechanical properties, presenting exciting opportunities for the exploration of two-dimensional (2D) MX 2 Z 4 materials. However, the low carrier mobility of α-phase MoSi 2 N 4 significantly limits its potential applications in field-effect transistor (FET) devices. In this study, we systematically investigate the structural stability, elastic properties, and carrier mobility of a novel family of β-phase MX 2 N 4 (M = Mo, W; X = Si, Ge) monolayers through first-principles calculations. Our findings reveal that these β-phase MX 2 N 4 monolayers demonstrate remarkable dynamic, thermal, and mechanical stability. Specifically, we identify the MoSi 2 N 4 , MoGe 2 N 4 , WSi 2 N 4 , and WGe 2 N 4 monolayers as semiconductors with band gaps of 2.70 eV, 1.57 eV, 3.12 eV, and 1.93 eV, respectively, as calculated using the HSE06 functional. Moreover, the MX 2 N 4 monolayers exhibit significant elastic anisotropy, characterized by high ideal tensile strengths and a critical tensile strain exceeding 25%. Notably, the WGe 2 N 4 monolayer displays exceptional anisotropic in-plane charge transport, achieving mobility levels of up to 10 4 cm 2 V − 1 S − 1 , surpassing those of the α-phase MX 2 N 4 monolayers. These novel ternary monolayer structures have the potential to broaden the 2D MX 2 Z 4 material family and emerge as promising candidates for applications in field-effect transistors.
multidisciplinary sciences