The in vitro micronucleus assay.

A. Doherty

DOI: https://doi.org/10.1007/978-1-61779-421-6_7

Abstract:

What problem does this paper attempt to address?

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

dongchen lan,dawei di,gavin conibeer,xuguang jia,lingfeng wu

DOI: https://doi.org/10.1117/12.2002775

2013-01-01

Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.
Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Yesukhei Jagvaral,Qing Guo,Haiying He,Ravindra Pandey

DOI: https://doi.org/10.1039/c9cp00894b

2019-01-01

Abstract:Titania (TiO2) is a material of choice for energy-related applications, such as photovoltaics and photocatalysis. The presence of a large band gap and fast electron-hole recombination occurring in the lattice significantly reduce the material's quantum efficiency, and therefore limit industrial-scale applications. In this article, we investigate whether silicene can be a viable substrate for TiO2 nanostructures in photocatalytic applications. Calculations based on density functional theory find a strong electronic coupling between silicene and oxide nanostructures. Electron transfer from silicene to the nanostructures results in the production of active photoreduction sites involving Ti3+ ions in the system. The hybrid TiO2/silicene system also exhibits modification of optical characteristics with the capability of absorbing light in the visible range and spatially separating charges, thus displaying superior photocatalytic activity relative to pristine TiO2 for energy-related applications.
Enhanced stability and tunable optoelectronic properties of silicon-carbon monolayer by strain and surface functionalization

Huabing Shu,Jiyuan Guo

DOI: https://doi.org/10.1039/d4tc00401a

IF: 6.4

2024-03-30

Journal of Materials Chemistry C

Abstract:Exploring novel two-dimensional carbon-based materials with superior properties is of a special importance for applications in nano-optoelectronics. Here, based on theoretical calculations, a silicon-carbon (Si2C) monolayer is explored, offering desirable properties under strains and surface functionalization. The pristine Si2C monolayer is unstable dynamically, but a small tensile strain of +2.5% and fluorination can make it more stable dynamically. The pristine Si2C monolayer is a direct semiconductor with moderate bandgap, whose gap and exciton binding energy can be continuously tuned by strain engineering. Also, the tensile strain (fluorination) on Si2C monolayer can induce a variation of optical transitions, thus resulting in a significant red-shift (blue-shift) of the optical absorption spectrum. In short, the Si2C monolayer under tensile strain and fluorination is unique, making it great potential in nano-optoelectronics.

materials science, multidisciplinary,physics, applied
One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Shanliang Chen,Weijun Li,Xiaoxiao Li,Weiyou Yang

DOI: https://doi.org/10.1016/j.pmatsci.2019.04.004

2019-01-01

Abstract:Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.
Experimental Realization of Atomic Monolayer Si9C15

Zhao‐Yan Gao,Wenpeng Xu,Yixuan Gao,Roger Guzman,Hui Guo,Xueyan Wang,Qi Zheng,Zhili Zhu,Yu‐Yang Zhang,Xiao Lin,Qing Huan,Geng Li,Lizhi Zhang,Wu Zhou,Hong‐Jun Gao

DOI: https://doi.org/10.1002/adma.202204779

IF: 29.4

2022-07-13

Advanced Materials

Abstract:Monolayer SixCy, constitutes an important family of two‐dimensional (2D) materials that is predicted to feature a honeycomb structure and appreciable band gaps. However, due to its binary chemical nature and the lack of bulk polymorphs with layered structure, fabrication of such materials has so far been challenging. Here, we report the synthesis of atomic monolayer Si9C15 on Ru (0001) and Rh(111) substrates. A combination of scanning‐tunneling‐microscopy (STM), X‐ray‐photoelectron‐spectroscopy (XPS), scanning transmission electron microscopy (STEM) and density‐functional‐theory (DFT) calculations is used to infer that the 2D lattice of Si9C15 is a buckled honeycomb structure. Monolayer Si9C15 shows semiconducting behavior with a band gap of ∼1.9 eV. Remarkably, the Si9C15 lattice remains intact after exposure to ambient conditions, indicating good air stability. The present work expands the 2D materials library and provides a promising platform for future studies in nanoelectronics and nanophotonics. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Multifunctional silicene/CeO2 heterojunctions: Desirable electronic material and promising water-splitting photocatalyst

Liang Xu,Jian Zeng,Quan Li,Xin Luo,Tong Chen,Jingjing Liu,Ling-Ling Wang

DOI: https://doi.org/10.1016/j.cclet.2021.11.026

IF: 9.1

2021-11-01

Chinese Chemical Letters

Abstract:The first-principles calculations demonstrate that covalently bonded (cb) heterojunction and van der Waals (vdW) heterojunction can coexist in silicene/CeO2 heterojunctions, due to the different stacking patterns. Especially, the cb heterojunction with band gap of 1.97 eV, forms a type-II heterojunction, exhibits good redox performance and has high-effective optical absorption spectra, thus it is a promising photocatalyst for overall water splitting. Besides, for the vdW heterojunction, the Dirac cone of silicene is well kept on CeO2 semiconducting substrate, with a considerable energy gap of 0.43 eV, which can be an ideal material in building silicene-based electronic device. These results may open a new gateway in both of nanoelectronic device and energy conversion for silicene/CeO2 nanocomposites.

chemistry, multidisciplinary
Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Fang Nan,Liu Feng,Liu Xiaorui,Liao Ruixian,Miao Ling,Jiang Jianjun

DOI: https://doi.org/10.6023/a12070398

2012-01-01

Acta Chimica Sinica

Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.
Metal-Free Janus α- and β-SiCP2: Designing Stable and Efficient Two-dimensional Semiconductors for Water Splitting

Yanfu Zhao,Bofeng Zhang,Jiahe Lin

DOI: https://doi.org/10.1039/d3cp03300g

IF: 3.3

2023-09-24

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) semiconductors exhibit exceptional potential in the field of photocatalytic water splitting due to their unique structural characteristics and photoelectric properties. In this study, based on the first-principles theory, we theoretically proposed two Janus 2D semiconductors SiCP2 with high stability, namely monolayer α- and β-SiCP2. By performing the calculation of HSE06 functionals, the band structures of monolayer α- and β-SiCP2 have been estimated, and the results show that both α- and β-SiCP2 are direct-band-gap semiconductors with band gaps of 1.64 eV and 1.91 eV, respectively. Meanwhile, the band edge levels of monolayer α- and β-SiCP2 meet the band structure requirements of photocatalysts in water splitting. Notably, because of the internal build-in electric fields and tiny band gaps, monolayer α- and β-SiCP2 exhibit the separated photogenerated electron-hole pairs and the high solar-to-hydrogen (STH) efficiency, reaching up to 33.68% and 23.72%, respectively. Additionally, we also investigate the impact of uniaxial strain on electronic, optical and photocatalytic properties of monolayer α- and β-SiCP2 considering pH values ranging from 0 to 14.Our results demonstrate that the maximum STH efficiency for α-SiCP2 is achieved under X-direction strain (η) of 2%, Y-direction strain (η) of 8%, and pH values between 2 and 4. Conversely, β-SiCP2 exhibits the highest STH efficiency under X-direction strain (η) of 8%, Y-direction strain (η) of 6%, and pH values between 2 and 4.

chemistry, physical,physics, atomic, molecular & chemical
Two dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting

Yun-Lai Zhu,Jun-Hui Yuan,Ya-Qian Song,Sheng Wang,Kan-Hao Xue,Ming Xu,Xiao-Min Cheng,Xiang-Shui Miao

DOI: https://doi.org/10.1007/s10853-019-03699-y

2018-10-29

Abstract:Highly-efficient water splitting based on solar energy is one of the most attractive research focuses in the energy field. Searching for more candidate photocatalysts that can work under visible-light irradiation are highly demanded. Herein, using first principle calculations based on density functional theory, we predict that the two dimensional silicon chalcogenides, i.e. SiX (X=S, Se, Te) monolayers, as semiconductors with 2.43 eV~3.00 eV band gaps, exhibit favorable band edge positions for photocatalytic water splitting. The optical adsorption spectra demonstrate that the SiX monolayers have pronounced optical absorption in the visible light region. Moreover, the band gaps and band edge positions of silicon chalcogenides monolayers can be tuned by applying biaxial strain or increasing the number of layers, in order to better fit the redox potentials of water. The combined novel electronic, high carrier mobility, and optical properties render the two dimensional SiX a promising photocatalyst for water splitting.

Materials Science
Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

Xiangchao Zhang,Yong‐yuan Zhu,Hao Zhang,G. Ni,Xiao-Ying He,Heyuan Zhu,Yuanfeng Xu,Zeyu Ning,H. Shao,Bo Peng

DOI: https://doi.org/10.1039/C7RA06903K

2017-09-22

Abstract:Monolayer pentagonal silicon dicarbide is a 2D material composed entirely of pentagons, and it possesses novel electronic properties possibly leading to many potential applications. In this paper, using first-principles calculations, we have systematically investigated the electronic, mechanical and transport properties of monolayer penta-SiC2 by strain-engineering. By applying in-plane tensile or compressive strain, it is possible to modulate the physical properties of monolayer penta-SiC2, which subsequently changes the transport behaviour of the carriers. More interestingly, at room temperature, the uniaxial compressive strain of −8% along the a-direction can enhance the hole mobility of monolayer penta-SiC2 along the b-direction by almost three orders of magnitude up to 1.14 × 106 cm2 V−1 s−1, which is much larger than that of graphene, while similar strains have little influence on the electron mobility. The ultrahigh and strain-modulated carrier mobility in monolayer penta-SiC2 may lead to many novel applications in high-performance electronic and optoelectronic devices.

Engineering,Materials Science,Physics
Synthesis of Monolayer SiP by Chemical Vapor Transport toward Superior Optoelectronic and Catalytic Performance

Tong Yu,Hailong Qiu,Hongjun Liu,Zhanggui Hu,Yicheng Wu

DOI: https://doi.org/10.1039/d4qi00066h

IF: 7.779

2024-02-27

Inorganic Chemistry Frontiers

Abstract:Two dimensional (2D) materials have attracted significant attention recently due to their broad prospects for optoelectronic applications. As a member of silicon germanium nitride, 2D SiP has become a promising candidate material in various applications because of its advantages, including large bandgap, fast photoresponse, strong anisotropy, and high chemical stability. This work successfully prepared monolayer SiP on mica substrates for the first time using the chemical vapor transport (CVT) method and studied the growth conditions and process of monolayer SiP. The typical applications of 2D SiP in photodetectors and hydrogen evolution reaction (HER) catalysts were emphasized. The results indicate that monolayer SiP has high responsiveness and a reasonable repetition period. Furthermore, it exhibits excellent catalytic activity and stability in hydrogen evolution reactions. In summary, this new growth method may provide insights into the controllable growth of IV-V family 2D semiconductors. Meanwhile, SiP as a promising optoelectronic, electrochemical catalytic, and energy storage material, will also provide a promising prospect for developing advanced optoelectronic devices and HER electrocatalysts based on 2D materials.

chemistry, inorganic & nuclear
The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC$_2$

Yuanfeng Xu,Zeyu Ning,Hao Zhang,Gang Ni,Hezhu Shao,Bo Peng,Xiangchao Zhang,Xiaoying He,Yongyuan Zhu,Heyuan Zhu

DOI: https://doi.org/10.48550/arXiv.1701.03715

2017-01-14

Abstract:Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By applying an in-plane tensile or compressive strain, it is easy to modulate the electronic band structure of monolayer penta-SiC$_2$, which subsequently changes the effective mass of carriers. Furthermore, the obtained electronic properties are predicted to change from indirectly semiconducting to metallic. More interestingly, at room temperature, uniaxial strain can enhance the hole mobility of penta-SiC$_2$ along a particular direction by almost three order in magnitude, $i.e.$ from 2.59 $\times10^3 cm^2/V s$ to 1.14 $\times10^6 cm^2/V s$ (larger than the carrier mobility of graphene, 3.5 $\times10^5 cm^2/V s$), with little influence on the electron mobility. The high carrier mobility of monolayer penta-SiC$_2$ may lead to many potential applications in high-performance electronic and optoelectronic devices

Materials Science,Mesoscale and Nanoscale Physics
Improving Optical and Electronic Performance of Monolayer Silicon Carbide Via Metal Doping

Junfeng Li,Yanlong Tang,Siyuan Xu,Tao Lin,Tuobei Sun,Huaiyu Ye

DOI: https://doi.org/10.1109/icept59018.2023.10492296

2023-01-01

Abstract:Two-dimensional SiC materials possess exceptional chemical reactivity and thermal stability, similar to graphene and silicone. Using first-principles computations, this work examines the electrical and optical characteristics of monolayer SiC and doped monolayer SiC with Ag, Co, Fe, and Pt. In monolayer SiC, the Si and C sites have distinctive electronic and optical characteristics, and their interactions with metal dopants result in a variety of electronic structural modifications. The performance of SiC-based electronic devices in semiconductor, optoelectronic, and photovoltaic applications must be optimized in light of these discoveries. SiC monolayer band gap and work function are impacted by doping, with Agdoped SiC showing the greatest reduction in band gap and work function. Doping, especially Ag doping at the C site, which exhibits the greatest absorption coefficient in the visible light spectrum, changes the absorption and reflectance characteristics of monolayer SiC. The loss function is also changed by doping, adding further information about its optical characteristics. This study emphasizes how electrical and optical properties may be modified by doping, providing opportunities for its use in a variety of optoelectronic devices.
Monolayer H-Si-P Semiconductors: Structural stability, electronic structure, optical properties, and Prospects for photocatalytic water splitting

X. Q. Shu,J. H. Lin,H. Zhang,X.Q.Shu

DOI: https://doi.org/10.48550/arXiv.2101.05437

2021-01-14

Computational Physics

Abstract:Group IV and V monolayers are the promising state-of-the-art 2D materials owing to their high carrier mobility, tunable bandgaps, and optical linear dichroism along with outstanding electronic and thermoelectric properties. Furthermore, recent studies reveal the stability of free-standing 2D monolayers by hydrogenation. Inspired by this, we systematically predict and investigate the structure and properties of various hydrogen saturated silicon phosphide (H-Si-P) monolayers, based on first-principles calculations. According to the results, H-Si-P monolayers belong to indirect bandgap semiconductors with a highly stable structure. Their bandgaps and band edge positions assessed using accurate hybrid functional are shown to be effectively adjusted by applying a biaxial strain. Furthermore, the absorption spectra of these monolayers, simulated in the context of time-dependent density functional theory, exhibit their excellent potential for solar energy conversion and visible-light-driven photocatalytic water splitting. In this respect, this work provides valuable guidance for finding more 2D semiconductors and nanostructures for nanoelectronic and optoelectronic applications, as well as for photocatalytic water splitting.
Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Meng Zhang,Hailong Ling,Wenguo Zhang,Huiguang Bian,Hui Lin,Ting Wang,Zhenjiang Li,Alan Meng

DOI: https://doi.org/10.1016/j.matchar.2021.111413

IF: 4.537

2021-10-01

Materials Characterization

Abstract:It is a crucial item to develop an available, efficient and stable cathode material for the application of flat-panel display, vacuum micro-electronic device, electron source and related area/equipment. In this work, oriented single-crystalline SiC nanowires (SiCNW) arrays were successfully fabricated onto the Si (100) substrate according to an easy Ni-catalyst-assisted chemical vapor deposition (CVD) process. The systematical characterization results suggested that product growth was modulated via the vapor-liquid-solid (VLS) mechanism. As the promising member in the candidate cathodes, SiCNW arrays with superior current emission stability (~ ± 6.1%) displayed decreased turn-on field (1.26 V/μm) along with threshold field (1.83 V/μm) at the optimal spacing between anode and cathode (about 500 μm), suggesting their great application potential as field emitters in the future. The positive effect of the stacking faults on the electronic structure and field emission (FE) properties were investigated through first principles calculation using Vienna ab initio Simulation package (VASP) of density functional theory (DFT). Furthermore, a reasonable synergetic electronic transmission mechanism based on peculiar morphology and electronic band structure was proposed to explain the superior field emission performances.

materials science, multidisciplinary,metallurgy & metallurgical engineering, characterization & testing
Two‐Dimensional Silicon for (Photo)Catalysis

Shenghua Wang,Chenhao Wang,Wangbo Pan,Wei Sun,Deren Yang

DOI: https://doi.org/10.1002/solr.202000392

IF: 9.1726

2020-09-20

Solar RRL

Abstract:<section class="article-section__content"><p>Two‐dimensional materials (2D M) possess unique structural, optical, and electronic properties in comparison with their bulk counterparts. Therefore, they have been demonstrated to be excellent performers for catalysis (especially photocatalysis). Among these 2D catalytic materials, 2D silicon (2D Si) is an emerging subclass, gifted with Si's high abundance, low toxicity, and strong light‐harvesting ability. Endowed with the universal advantages of 2D M including a large surface area, prolific active sites and loading positions for other elements, and ultrathin thickness for the generation of defects and transportation of photogenerated carriers, 2D Si exhibits additionally distinct surface chemistry and metal‐support interactions through geometrical assembly. These features render 2D Si a competitive candidate for (photo)catalysis, drawing burgeoning interest recently.</p></section>

energy & fuels,materials science, multidisciplinary
Electronic structure and photocatalytic mechanism of g-SiC/MoSSe van der waals heterostructures: A first principles study

Dong Qin,Xianbin Zhang,Wenting Li,Kang Wang,Shuqian Wang

DOI: https://doi.org/10.1016/j.spmi.2021.106837

IF: 3.22

2021-05-01

Superlattices and Microstructures

Abstract:<p>The two-dimensional MoSSe based heterostructures has attracted much attention due to its excellent physical and chemical properties. In this research, first principles study were used to investigate the stability, electronic structure and optical behavior of g-SiC/MoSSe vdW heterostructures, as well as the photocatalytic performance of the overall water splitting. This research found that the g-SiC/MoSSe vdW heterostructures was an indirect band gap semiconductor with a type II band alignment which indicated the reduction and oxidation reactions of water splitting were carried out in different layers. In addition, the 6.23 eV potential drop generated by the charges transfer in the interface region can effectively inhibit the photo-generated e<sup>-</sup>/h<sup>+</sup> recombination which is beneficial to improve the carriers mobility and the existence lifetime. Significantly, the g-SiC/MoSSe vdW heterostructures has a relatively high optical absorption in the visible light region which can effectively utilize the solar energy comparing to g-SiC and MoSSe monolayers. At different pH of medium, the photocatalytic ability of g-SiC/MoSSe vdW heterostructures all satisfy the splitting of water. These fascinating properties indicate that g-SiC/MoSSe vdW heterostructures can be used as an efficient photocatalysts and have extraordinary application prospects.</p>

physics, condensed matter
Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

Dong Fan,Shaohua Lu,Yundong Guo,Xiaojun Hu

DOI: https://doi.org/10.1039/C6TC05415C

2016-12-28

Abstract:The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different stoichiometries from C-rich to Si-rich. Besides the previously known hexagonal SiC sheet, we identified two types of hitherto-unknown structural motifs with distinctive bonding features. The first type of 2D SiC monolayer, including t-SiC and t-Si$_2$C sheet, can be described by tetragonal lattice. Among them,t-SiC monolayer sheet is featured by each carbon atom binds with four neighboring silicon atoms in almost the same plane, constituting a quasi-planar four-coordinated rectangular moiety. More interestingly, our calculations demonstrate that this structure exhibits a strain-dependent insulator-semimetal transition, suggesting promising applications in strain-dependent optoelectronic sensors. The second type of 2D SiC sheet is featured by silagraphyne with acetylenic linkages(-C$\equiv$C-). Silagraphyne shows both high pore sizes and Poisson's ratio. These properties make them a potentially important material for applications in separation membranes and catalysis. Moreover, one of the proposed structures, $\gamma$-silagraphyne, is a direct-band-gap semiconductor with a bandgap of 0.89 eV, which has a strong absorption peak in the visible-light region, giving a promising application in ultra-thin transistors, optical sensor devices and solar cell devices.

Materials Science
Catecholamine concentrations in CSF and plasma of patients with cerebral infarction and haemorrhage.

J. Meyer,E. Stoica,I. Pascu,K. Shimazu,A. Hartmann

DOI: https://doi.org/10.1093/BRAIN/96.2.277

1973-06-01

Abstract:
Predicted XN (X = C, Si, Ge, and Sn) Monolayers with Ultrahigh Carrier Mobility: Potential Photocatalysts for Water Splitting

Kai Ren,Huabing Shu,Lei Huang,Ke Wang,Yi Luo,Wenyi Huo,Changwei Bi,Yu Jing

DOI: https://doi.org/10.1021/acs.jpcc.3c06284

2023-01-01

Abstract:Using evolutionary search and first-principles methods, we predict new two-dimensional XN (X = C, Si, Ge, Sn) monolayers. They are confirmed to be indirect-gap semiconductors and are stable energetically and dynamically. In particular, the SiN monolayer shows a moderate gap of similar to 2 eV and isotropic mechanical characteristics. The CN monolayer possesses a wide band gap of similar to 6 eV, maximal Young's modulus (similar to 550 N/m), and minimal Poisson's ratio (similar to 0.12). The electron mobility of the SnN monolayer can be as large as similar to 1.55 x 10(4) cm(2)V-1s(-1), exceeding that of previously reported black phosphorene (10(4) cm(2)V-1s(-1)). Besides, the SnN and GeN monolayers also exhibit good light absorptions and excellent catalytic performances in terms of Gibbs free energies. These suggest that the XN (X = C, Si, Ge, or Sn) monolayers have potential applications in nanoelectronic and optoelectronic devices.

The in vitro micronucleus assay.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Enhanced stability and tunable optoelectronic properties of silicon-carbon monolayer by strain and surface functionalization

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Experimental Realization of Atomic Monolayer Si9C15

Multifunctional silicene/CeO2 heterojunctions: Desirable electronic material and promising water-splitting photocatalyst

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Metal-Free Janus α- and β-SiCP2: Designing Stable and Efficient Two-dimensional Semiconductors for Water Splitting

Two dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting

Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

Synthesis of Monolayer SiP by Chemical Vapor Transport toward Superior Optoelectronic and Catalytic Performance

The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC$_2$

Improving Optical and Electronic Performance of Monolayer Silicon Carbide Via Metal Doping

Monolayer H-Si-P Semiconductors: Structural stability, electronic structure, optical properties, and Prospects for photocatalytic water splitting

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Two‐Dimensional Silicon for (Photo)Catalysis

Electronic structure and photocatalytic mechanism of g-SiC/MoSSe van der waals heterostructures: A first principles study

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

Catecholamine concentrations in CSF and plasma of patients with cerebral infarction and haemorrhage.

Predicted XN (X = C, Si, Ge, and Sn) Monolayers with Ultrahigh Carrier Mobility: Potential Photocatalysts for Water Splitting