Experimental Realization of Atomic Monolayer Si9C15
Zhao‐Yan Gao,Wenpeng Xu,Yixuan Gao,Roger Guzman,Hui Guo,Xueyan Wang,Qi Zheng,Zhili Zhu,Yu‐Yang Zhang,Xiao Lin,Qing Huan,Geng Li,Lizhi Zhang,Wu Zhou,Hong‐Jun Gao
DOI: https://doi.org/10.1002/adma.202204779
IF: 29.4
2022-07-13
Advanced Materials
Abstract:Monolayer SixCy, constitutes an important family of two‐dimensional (2D) materials that is predicted to feature a honeycomb structure and appreciable band gaps. However, due to its binary chemical nature and the lack of bulk polymorphs with layered structure, fabrication of such materials has so far been challenging. Here, we report the synthesis of atomic monolayer Si9C15 on Ru (0001) and Rh(111) substrates. A combination of scanning‐tunneling‐microscopy (STM), X‐ray‐photoelectron‐spectroscopy (XPS), scanning transmission electron microscopy (STEM) and density‐functional‐theory (DFT) calculations is used to infer that the 2D lattice of Si9C15 is a buckled honeycomb structure. Monolayer Si9C15 shows semiconducting behavior with a band gap of ∼1.9 eV. Remarkably, the Si9C15 lattice remains intact after exposure to ambient conditions, indicating good air stability. The present work expands the 2D materials library and provides a promising platform for future studies in nanoelectronics and nanophotonics. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology