Irreversible semiconductor-to-semiconductor transition and highly enhanced photoconductivity of Y 2 S 3 induced by structural modulation
Zhiwei Shen,Linyan Wang,Lei Yue,Shaojie Wang,Ke Yang,Quanjun Li,Yong Liu,Guoying Gao,Lin Wang,Yongjun Tian
DOI: https://doi.org/10.1016/j.apmt.2023.102008
IF: 8.663
2023-12-04
Applied Materials Today
Abstract:In this study, we investigated the effects of pressure on Y 2 S 3 by examining various properties such as conductance, band gap, photoconductivity, and crystal structure. To do this, we employed electrical transport measurements, UV–vis absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and theoretical calculations. The results obtained from the electrical transport measurements revealed an irreversible semiconductor-to-semiconductor transition in Y 2 S 3 at approximately 10 GPa. Additionally, we observed a gradual decrease in the band gap at low pressure, but a sharp drop starting at around 10 GPa, which corresponded to the change in transport properties. Moreover, the photoconductivity of the decompressed Y 2 S 3 sample was found to be 2–3 orders of magnitude higher than that of the pristine sample. Our X-ray diffraction and Raman measurements provided clear evidence of an irreversible first-order phase transition occurring in Y 2 S 3 , transitioning from a monoclinic to an orthorhombic crystal structure at ∼10 GPa. This phase transition helps to explain the abrupt changes observed in transport, band gap, and photoconductivity. These findings were further confirmed by our first-principle calculations.
materials science, multidisciplinary