Abstract:We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structures can be explained only within the framework of the plasmonic crystal model. We identify two different plasmonic crystal phases. The first is the delocalized phase, where THz radiation interacts with the entire grating-gate structure that is realized at a weakly modulated 2D electron gas (2DEG) regime. In the second, the localized phase, THz radiation interacts only with the ungated portions of the structure. This phase is achieved by fully depleting the gated regions, resulting in strong modulation. By gate-controlling of the modulation degree, we observe a continuous transition between these phases. We also discovered that unexpectedly the resonant plasma frequencies of ungated parts (in the localized phase) still depend on the gate voltage. We attribute this phenomenon to the specific depletion of the conductive profile in the ungated region of the 2DEG, the so-called edge gating effect. Although we study a specific case of plasmons in AlGaN/GaN grating-gate structures, our results have a general character and are applicable to any other semiconductor-based plasmonic crystal structures. Our work represents the first demonstration of an electrically tunable transition between different phases of THz plasmonic crystals, which is a crucial step towards a deeper understanding of THz plasma physics and the development of all-electrically tunable devices for THz optoelectronics.

Plasmonic Spectrum and Resonance of Grating-gate GaN/AlGaN HEMTs

Plasmonic Spectrum and Resonance of Grating-gate GaN/AlGaN HEMTs

Study of Two-dimensional Plasmon Resonance of a Grating Gate HEMT

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

The Plasmonic Resonant Absorption in Gan Double-Channel High Electron Mobility Transistors

Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries

The absorption tunability and enhanced electromagnetic coupling of terahertz-plasmons in grating-gate AlN/GaN plasmonic device

Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals-Experimental Validation of Analytical Approach

Numerical Study on THz Radiation of Two-Dimensional Plasmon Resonance of GaN HEMT Array

Room Temperature Terahertz Emission from Biased AlGaN/GaN Grating-Gate HEMT Array

Electric Field Driven Plasmon Dispersion in Algan/Gan High Electron Mobility Transistors

Observation of Terahertz Plasmon and Plasmon-Polariton Splitting in a Grating-Coupled AlGaN/GaN Heterostructure.

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Electrical Tuning of Terahertz Plasmonic Crystal Phases

Transmission properties of grating-gate GaN-based HEMTs under different incident angles in the mid-infrared region

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

Terahertz Plasmon Polariton Formed in a Fabry–Pérot Cavity and a Grating-Coupled Two-Dimensional Electron Gas

Numerical Calculation of THz Emission of a GaN HEMT Using Coupled Hydrodynamic-Maxwell Equations

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation