Abstract:Selective area heteroepitaxy provides an alternate solution for the monolithic integration of high-performance III-V lasers on Si with effective management of crystalline defects. Here, we report large-area single-crystal InP grown on (001) patterned silicon-on-insulator (SOI) wafers using the lateral aspect ratio trapping (LART) method by metal-organic chemical vapor deposition. The InP grown on SOI features a length of hundreds of micrometers and a width of up to 8.5 μm with an “in-plane” configuration. Based on fine-tuned growth conditions, especially in the InP nucleation layer on the Si interface, crystalline defects have been minimized resulting in large-area high-quality materials for active devices. Growth mechanisms describing each stage of epitaxy are presented to explain the difference of lateral growth in small and large material volumes. Comprehensive material characterizations and device implementations were performed on the InP/SOI to characterize its viability as an integration platform for photonics. III-V lasers with micro-cavity and Fabry–Perot cavity were fabricated and statistically analyzed to demonstrate the feasibility of providing photonic function. Attaining large-area InP/SOI addresses the bottleneck of limited III-V material volume in selective epitaxy leading to a critical step toward monolithic integration of III-V on Si. Furthermore, the high-quality InP/SOI could serve as a mini template for regrowth to construct various photonic building blocks. Large-area and high-quality III-V on SOI here ensure LART as an easy, flexible, and tolerable method for the potential realization of fully integrated Si photonics.

Sub-wavelength InP lasers selectively grown on SOI

1.9 μm hybrid silicon/iii-v semiconductor laser

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

In‐Plane 1.5 Μm Distributed Feedback Lasers Selectively Grown on (001) SOI

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Selectively Grown III-V Lasers for Integrated Si-Photonics

In‐Plane 1.5 Μm Distributed Feedback Lasers Selectively Grown on (001) SOI (laser Photonics Rev. 18(1)/2024)

Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics

Large-area Single-Crystal Indium Phosphide Laterally Grown on Patterned Silicon-on-insulator

In-plane 1.5 Μm DFB Lasers Laterally Grown on SOI

Large-area InP Laterally Grown on SOI for Micro-lasers and Fabry-Perot Lasers

Buried InGaAs/InP quantum wells selectively grown on SOI for lateral membrane laser diodes

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Optically Pumped Mid-Infrared Light Emitter on Silicon

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Microstructural characterization of InP films on SOI (001) substrates grown by selective lateral metal-Organic vapor-Phase epitaxy

Monolithic Quantum Dot Discrete Mode Laser on SOI

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Monolithic integration of embedded III-V lasers on SOI