Abstract:This article presents a broadband millimeter-wave (mm-wave) linear power amplifier (PA) to support 5G and beyond wireless communication. An asynchronously tuned coupled resonator (ATCR) circuit model is introduced to effectively design PA's non-ideal transformer-based broadband output matching network (OMN). Two adaptive feedback linearizers (AFLs) and multi-gated transistor (MGTR) techniques are adapted to optimize the linearity. Both amplitude-to-amplitude (AM-AM) and amplitude-to-phase modulation (AM-PM) distortion are improved over one octave with these techniques. A prototype PA is implemented in 28-nm bulk CMOS to verify the proposed ideas. The measured PA realizes 76% S-21- 3-dB fraction bandwidth (FBW) from 19.7 to 43.8 GHz, fully supporting five operating bands in 5G new radio (NR) frequency range 2 (FR2), i.e., n 257- n 261. The measured | AM-PM | is less than 4 degrees over 24-43 GHz. The large-signal measurement results show that the PA realizes 18.7-20.3-dBm P-sat , 16.8-19-dBm OP1dB, 24.9%-35.5% PAE(max), and 20.6%-29.7% PAE(P1dB) over 22-40 GHz. For 5G NR FR2 200-MHz 64-QAM signals [9.7-dB peak-to-average power ratio (PAPR)], the PA achieves an average Pout /PAE of 11.0 dBm/8.7% with -25.2-dB EVMrms at 24 GHz. The proposed PA achieves a compact size with a core area of 0.088 mm(2), making it very suitable for large-scale phased array beamformers.

A Broadband Power Amplifier Covering 14-36 GHz in 65-nm CMOS Technology

Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS

A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing

Design and Analysis of a 26–34.5-Ghz Power Amplifier with Balanced Mismatch Reduction and Interstage Matching

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A High Linearity Class AB Power Amplifier for Sub-1 GHz Applications

A Full Ka-Band Power Amplifier with 32.9% PAE and 15.3-Dbm Power in 65-Nm CMOS

A 38-48 GHz Power Amplifier with 23-dB Gain 18.5-dBm Psat and 28% PAE in 65-nm CMOS

Design of Ka-Band Broadband High-Gain Power Amplifier in 65-Nm CMOS

A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

A K-band Wideband Power Amplifier in 40-Nm CMOS with 7.6-Dbm Output Power

A 68–79 GHZ 15.6DBM Power Amplifier in 65NM CMOS

A Dual-Band High-Efficiency Power Amplifier in 65-Nm CMOS Technology

A Wideband High Efficiency V-Band 65 Nm Cmos Power Amplifier With Neutralization And Harmonic Controlling

A Compact 144% Fractional Bandwidth CMOS Power Amplifier With an Optimization of Synthesized High-Order Matching Network.

A 23-30 GHz 4-Path Series-Parallel-Combined Class-AB Power Amplifier with 23 Dbm Psat, 38.5% Peak PAE and 1.3° AM-PM Distortion in 40nm Bulk CMOS

A Wideband Power Amplifier in 65 nm CMOS Covering 25.8 GHz–36.9 GHz by Staggering Tuned MCRs

A Compact 19.7-to 43.8-Ghz Power Amplifier with 20.3-Dbm $p_{\mathrm{sat}}$ and 35.5% PAE in 28-Nm Bulk CMOS

A Wideband 28 GHz Fully-Integrated Power Amplifier in 65 Nm CMOS Technology

A 57-64 GHz Two-Way Parallel-Combined Power Amplifier with 16.6 dBm Psat and 23.6% Peak PAE in 40nm Bulk CMOS