Abstract:Magnetic topological insulators in the tetradymite family, such as Cr/V doped Bi2Se3, Bi2Te3, Sb2Te3, and their ternary compounds, provide a new route for realizing the novel time-reversal symmetry-breaking physics [1, 2]. To effectively manipulate these versatile quantum states, various heterostructures are demonstrated by utilizing the unique Néel order in an antiferromagnet CrSb and the topological order in a magnetic topological insulator Cr-doped (Bi,Sb)2Te3 [3-5] grown by molecular beam epitaxy. It is shown that emergent interfacial magnetic interactions can be tailored through deliberate artificial structural engineering. By investigating bilayers, trilayers, and superlattices made of these two components, interfacial exchange coupling and antiferromagnetic exchange coupling were shown to affect the topological magnetism as mediated by the massive Dirac fermions. The relationship of magnetic spin textures of the antiferromagnet to that of the magnetic topological insulator was further explored through polarized neutron reflectometry/diffraction, magneto-electrical transport measurements as well as the control of the mass of Dirac fermions by using different Cr doping concentrations. From these studies, the antiferromagnet is shown to be an efficient interfacial- and interlayer- exchange coupling layer for the massive Dirac fermions of the magnetic topological insulator, which additionally gives rise to a giant enhancement in magnetic ordering. This work provides a new framework for new topological antiferromagnetic spintronics. *The work was in part supported by the SHINES Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # S000686, National Science Foundation, Army Research Office program under contract 15-1-10561, TANMS, FAME Center, and a Semiconductor Research Corporation program sponsored by MARCO and DARPA. References: [1] Y. L. Chen et al., Science 329, 659 (2010). [2] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Physical Review B 78, 195424 (2008). [3] X. Kou et al., Nature Communications 6, 8474 (2015). [4] X. Kou et al., Physical Review Letters 113, 137201 (2014). [5] Y. Fan et al., Nature Materials 13, 699 (2014).

Proximity-induced Magnetic Order in Topological Insulator on Ferromagnetic Semiconductor

Proximity induced high-temperature magnetic order in topological insulator--ferrimagnetic insulator heterostructure.

Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator.

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

(Invited) Towards Topological Antiferromagnetic Spintronics

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Manipulating Surface-Related Ferromagnetism in Modulation-Doped Topological Insulators.

Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition

Electronic Coupling Between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties

Proximity-induced High-Temperature Superconductivity in the Topological Insulators Bi2Se3 and Bi2Te3

Magnetic Proximity Effect And Interlayer Exchange Coupling Of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer

Observation of Interfacial Antiferromagnetic Coupling Between Magnetic Topological Insulator and Antiferromagnetic Insulator

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Proximity Effect Between a Topological Insulator and a Magnetic Insulator with Large Perpendicular Anisotropy

Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer

Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator