Abstract:Tungsten and water co-doped indium oxide (IWOH) films were deposited via a low-damage reactive plasma deposition method at room temperature followed by air atmosphere annealing. The structural, electrical, and optical properties of IWOH films with different water flow rates (FH2O) were systematically investigated before and after annealing. Despite the lower mobility (43.7 cm2/V) of IWOH films with high water flow rate (H-FH2O, FH2O ≥ 1.5 sccm) in the as-deposited state, it has increased to 65.2 cm2/V, which surpassed IWOH films with low water flow rate (L-FH2O, FH2O < 1.5 sccm) after annealing. Meanwhile, a significant increase in average optical transmittance from 80.9% to 88.8% and from 92.2% to 95.2% in the short wavelength of visible (350–500 nm) and near-infrared region (800–2500 nm), respectively, was obtained for H-FH2O films after annealing. The variation of the optical and electrical properties for IWOH films with different FH2O was attributed to the crystalline structure with a larger crystallite size and lower density of grain boundary. X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy analysis revealed that high water flow rate impeded crystallization of IWOH films during reactive plasma deposition, leading to an amorphous structure in the as-deposited state. After annealing, however, the H-FH2O films crystallized and exhibited larger grains than both tungsten-doped indium oxide (IWO) and L-FH2O films. The modified crystalline properties of IWOH films with larger grains hence reducing grain-boundary scattering, which was realized by H-FH2O and annealing treatment, gave rise to enhanced electrical properties without deteriorating optical properties.

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