Abstract:Highlights A stable laminated Al 2 O 3 /HfO 2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al 2 O 3 /HfO 2 insulator. The flexible TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 . Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al 2 O 3 /HfO 2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In 0.37 Ga 0.20 Zn 0.18 O 0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al 2 O 3 /HfO 2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al 2 O 3 , crystallized HfO 2 , and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 , signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

Flexible High-Entropy Poly(vinyl Alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor.

Environmentally friendly, flexible and high performance PVA dielectric layer fabricated by solution method and its application in IGZO-TFT

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Graphitic Carbon Nitride/Polyvinylpyrrolidone Composite Dielectric for Low-Voltage Flexible InZnO Thin Film Transistor Grown on a Polyethylene Terephthalate Substrate

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All-Carbon-Nanotube Thin-Film-Transistor Integration

Solution-processed transparent PVP:HfO 2 hybrid dielectric films with low leakage current density and high k

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

P‐10.1: Low‐voltage Flexible Thin‐film Transistor Based on C3N4/polyvinylpyrrolidone Composite Electrolyte

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

A PVP-silica-titania hybrid film for low-voltage organic field-effect transistor

High‐Performance Organic Field‐Effect Transistors and Inverters with Good Flexibility and Low Operating Voltage

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors

Molecular and Atomic Layer Deposition of Hybrid Polyimide–Al2O3 Gate Dielectrics for Flexible Electronic Devices

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature