Abstract:Exchange bias (EB), as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Although there are some researches related to the voltage controlled EB, few of them focus on the regulation of perpendicular EB which is of great technological relevance for high-density spintronics. In this study, we demonstrated E-field control of perpendicular EB based on Pt 4nm/IrMn 4nm/Co 0.7 nm/(Co 0.7nm/Pt 0.95 nm) 2 /Ta 3nm/PMN-PT (011) multiferroic heterostructure at room temperature. Angular dependences of EB with different applied voltage were studied through vibrating sample measurements (VSM) and ferromagnetic resonance (FMR) measurements respectively. For each method, maximal E-field induced exchange field change of ΔH eb = 47 Oe and 95 Oe were obtained at θ=0° and 10° while under the compressive stress. Since VSM and FMR have different measurement principle, the difference of ΔH eb is predictable. We related this phenomenon to the strain induced lattice distortion, which can influence the Co 3d - Pt 5d interfacial hybridization and then the change of interlayer exchange bias. This voltage manipulation of perpendicular EB should offer new possibilities towards novel magnetic devices and memories with great energy-efficiency and ultra-high densities.

Locally Reconfigurable Exchange Bias for Tunable Spintronics by Pulsed Current Injection

Manipulating Exchange Bias in 2D Magnetic Heterojunction for High-Performance Robust Memory Applications

Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Magnetoelectric Exchange Bias Systems In Spintronics

Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures

Electrically Controlled Exchange Bias for Spintronic Applications

Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures

Robust Isothermal Electric Control of Exchange Bias at Room Temperature

Manipulating exchange bias by spin–orbit torque

Tuning the Direction of Exchange Bias in Ferromagnetic/Antiferromagnetic Bilayer by Angular-Dependent Spin-Polarized Current

Perpendicular Exchange Bias and Its Control by Magnetic, Stress and Electric Fields

Room Temperature Manipulation of Exchange Bias in Magnetic Heterojunctions

Manipulating Exchange Bias in Ir25Mn75/CoTb Bilayer Through Spin–orbit Torque

Local Control of Exchange Bias by Resistive Switching (phys. Status Solidi RRL 12/2018)

Voltage Control of Perpendicular Exchange Bias in Pt/IrMn/Co/(Co/Pt)2/Ta/PMN-PT(011) Multiferroic Heterostructures

Field-free Manipulation of Exchange Bias in Perpendicularly Magnetized Pt/Co/IrMn Structures by Spin-Orbit Torque

Spin Orbit Torque Locally Controlling Exchange Bias to Realize High Detection Sensitivity of Two-dimensional Magnetic Field

Magnetoelectric Switching of Exchange Bias.

Electric Control of Exchange Bias at Room Temperature by Resistive Switching Via Electrochemical Metallization.

Electric Control of Exchange Bias Effect in FePS3-Fe5GeTe2 Van Der Waals Heterostructures

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque