MXene V2CT X Nanosheet/Bismuth Quantum Dot-Based Heterostructures for Enhanced Flexible Photodetection and Nonlinear Photonics

Jun Zhu,Songrui Wei,Jie Tang,Yi Hu,Xiaoyu Dai,You Zi,Mengke Wang,Yuanjiang Xiang,Weichun Huang

DOI: https://doi.org/10.1021/acsanm.3c02317

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:Recently, novel two-dimensional materials, e.g., Xenes(graphdiyne,phosphorene, bismuthene, antimonene, etc.) and MXenes, have drawngreat attention in nanophotonics due to their excellent flexibility,high photothermal conversion efficiency, and large thermal conductivity.Although the Xenes and MXenes have achieved rapid progress in manyfields over the past decade, their relatively poor photodetectionand nonlinear photonics have still limited their practical applications.In this work, a mixed-dimensional 2D MXene V2CT x nanosheet (NS)/0D bismuth quantum dot (Bi QD)-basedheterostructure fabricated by a combination of selective etching andthe hydrothermal method was simply deposited onto a clean poly(ethyleneterephthalate) substrate with an embedded regular Ag lattice to preparea flexible photoelectrochemical (PEC) electrode. The PEC result showsthat the as-fabricated flexible electrode not only exhibits significantlyimproved photocurrent density (32.7 & mu;A cm(-2)) and photoresponsivity (906 & mu;A W-1) comparedto individual MXene V2CT x NSsand Bi QDs but also displays high stability with a stable photocurrentdensity even after 200 bending cycles at 60 & DEG;. Taking advantageof the Kerr effect of both MXene V2CT x NSs and Bi QDs, an all-optical switcher based on this mix-dimensionalheterostructure for the spatial cross-phase modulation has also beenrealized with a preferred modulation depth. Density functional theorycalculations provide direct evidence for the strong internal built-inelectric field (7.3 x 10(7) eV m(-1)) created by the heterostructure for the enhancement of both photodetectionand nonlinear photonics. The integration of Xenes or MXene-based mixed-dimensionalheterostructures provides a concept and fundamental guidance to constructnext-generation optoelectronic and photonic devices.