ZnSb/Ti3C2T X MXene Van Der Waals Heterojunction for Flexible Near-Infrared Photodetector Arrays

Chuqiao Hu,Ruiqing Chai,Zhongming Wei,La Li,Guozhen Shen
DOI: https://doi.org/10.1088/1674-4926/45/5/052601
2024-01-01
Journal of Semiconductors
Abstract:Two-dimension (2D) van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared (NIR) photodetector. Here, we report the successful fabrication of ZnSb/Ti3C2Tx MXene based flexible NIR photode-tector array via a facile photolithography technology. The single ZnSb/Ti3C2Tx photodetector exhibited a high light-to-dark cur-rent ratio of 4.98, fast response/recovery time (2.5/1.3 s) and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti3C2Tx MXene nanoflakes, and the formed 2D van der Waals heterojunction. Thin polyethylene terephtha-late (PET) substrate enables the ZnSb/Ti3C2Tx photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles. Moreover, the ZnSb/Ti3C2Tx photodetectors were integrated into a 26 × 5 device array, realizing a NIR image sensing application.
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