A 220-Ghz Perpendicular Chip-to-Waveguide Transition Using an LBE-SiGe-Based Cavity

Feng Xie,Zhang-Cheng Hao,Zekun Li,Zhe Chen
DOI: https://doi.org/10.1109/lmwt.2023.3292849
2023-01-01
Abstract:This letter presents a novel 220-GHz perpendicular chip-to-waveguide transition that enables the integration of a sub-terahertz (sub-THz) transmitter (Tx) with a standard WR4 waveguide (170–260 GHz with an aperture of $1.092\,\,\mathrm {\times }\,\,0.546$ mm2). The proposed transition consists of an ON-chip folded dipole antenna integrated with a SiGe BiCMOS Tx, a localized backside etching (LBE) cavity, and a micromachined stepped waveguide. The LBE cavity underneath the ON-chip antenna enhances coupling efficiency and minimizes insertion loss of the transition. Additionally, a stepped waveguide is positioned perpendicularly on the ON-chip antenna, achieving the transition from the chip to waveguide. Experimental results demonstrate that the proposed transition achieves a minimum insertion loss of 3.6 dB at 223.6 GHz, with a 3-dB bandwidth of 60 GHz from 187 to 247 GHz. The proposed transition offers a promising solution for directly integrating sub-THz waveguide systems.
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