Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Electrical Characteristics of MOS Capacitor with HfTiON Gate Dielectric and HfTiSiON Interlayer

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N2O surface nitridations

Impacts of Ti Content and Annealing Temperature on Electrical Properties of Si MOS Capacitors with HfTiON Gate Dielectric

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Electrical Properties of HfTiON Gate-Dielectric Metal-Oxide-semiconductor Capacitors with Different Si-surface Nitridations

Improved Electrical Properties of Metal-Oxide-semiconductor Capacitor with HfTiON Gate Dielectric by Using HfSiON Interlayer

Study on Electrical Properties of HfTiON and HfTiO Gate Dielectric Ge MOS Capacitors with Wet-No Surface Pretreatment

Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

Study on Characteristics of Ge MOS Capacitor with HfTiO High Κ Gate Dielectric

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor with AlON As Interlayer

Improved Interface Properties of an Hfo2 Gate Dielectric Gaas Mos Device by Using Sinx As an Interfacial Passivation Layer

Study on Electrical Characteristics of Ge MOS with HfTiO & HfO2 Gate Dielectric Annealed in Wet N2

Nitrided HfTiON/Ga2O3(Gd2O3) As Stacked Gate Dielectric for GaAs MOS Applications

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors