Abstract:The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of the HfO2/Si0.7Ge0.3 stack MOS (Metal-Oxide-Semiconductor) capacitor under ozone direct oxidation (pre-O sample) increases obviously. This is because the tiny amounts of GeOx in the formed interlayer (IL) oxide layer are more likely to diffuse into HfO2 and cause the HfO2/Si0.7Ge0.3 interface to deteriorate. Moreover, a post-HfO2-deposition (post-O) ozone indirect oxidation is proposed for the HfO2/Si0.7Ge0.3 stack; it is found that compared with pre-O sample, the Dit of the post-O sample decreases by about 50% due to less GeOx available in the IL layer. This is because the amount of oxygen atoms reaching the interface of HfO2/Si0.7Ge0.3 decreases and the thickness of IL in the post-O sample also decreases. To further reduce the Dit of the HfO2/Si0.7Ge0.3 interface, a Si-cap passivation with the optimal thickness of 1 nm is developed and an excellent HfO2/Si0.7Ge0.3 interface with Dit of 1.53 × 1011 eV−1cm−2 @ E−Ev = 0.36 eV is attained. After detailed analysis of the chemical structure of the HfO2/IL/Si-cap/Si0.7Ge0.3 using X-ray photoelectron spectroscopy (XPS), it is confirmed that the excellent HfO2/Si0.7Ge0.3 interface is realized by preventing the formation of Hf-silicate/Hf-germanate and Si oxide originating from the reaction between HfO2 and Si0.7Ge0.3 substrate.

Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N2O surface nitridations

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Effect of Er Ion Implantation on the Physical and Electrical Properties of TiN/HfO 2 Gate Stacks on Si Substrate

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Annealing induced hysteresis suppression for TiN/HfO 2/GeON/p-Ge capacitor

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Effect of Gate Electrodes on Structure and Electrical Properties of Sputtered Hfo2 Thin Films