Abstract:Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly for their perspectives toward artificial synapses for neural networks that can emulate neuromorphic visualization and memorize information. Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.

Metal-containing Organic Compounds for Memory and Data Storage Applications

Recent Advances in Organic‐based Materials for Resistive Memory Applications

Memory Materials and Devices: from Concept to Application

The synthesis of MOF nanosheets and their application in MOF-based resistance random access memory devices

Progress of Cation-Based Resistive Random Access Memory

Metal Oxide Semiconductors for Memory Applications

Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device

Organic small molecule-based RRAM for data storage and neuromorphic computing

Regulating WORM/Flash Electrical Memory Behavior of Metallopolymers Through Varying Metal Centers

Evolutionary Metal Oxide Clusters for Novel Applications: Toward High‐Density Data Storage in Nonvolatile Memories

Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Recent advances in inorganic oxides-based resistive random-access memory devices

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Nonvolatile Multistates Memories for High-Density Data Storage

ing to achieve organic ternary memory with a high device yield and improved performance †

Organic and Hybrid Resistive Switching Materials and Devices

Low‐Dimensional Metal‐Halide Perovskites as High‐Performance Materials for Memory Applications

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

Conjugated Polymers for Information Storage and Neuromorphic Computing

Integrated Memory Devices Based on 2D Materials