Abstract:The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO2 in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO2 and the demonstration of a vertical diode device in a graphene/epitaxial VO2/single-crystalline BN/graphite structure with VO2 as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO2 films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO2 film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal-insulator transition of VO2 could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO2-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.

Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film

Dimension-Controlled VO2 Film for Optoelectronic Logic Gates and Information Encryption.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Electrical and Infrared Responses of N-Vo2/p-gaas Heterojunctions Based on VO2 Phase Transition Properties

Low Temperature Fabrication of High-Performance VO2 Film Via Embedding Low Vanadium Buffer Layer

A 1D Vanadium Dioxide Nanochannel Constructed Via Electric-Field-Induced Ion Transport and Its Superior Metal-Insulator Transition.

Phase‐Transition‐Induced VO 2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications

Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure.

Fast, multi‐bit and Vis‐Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D‐perovskite van der Waals Heterojunction

Integrating Ultraviolet Sensing and Memory Functions in Gallium Nitride-based Optoelectronic Devices

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO 2 /Al:ZnO heterojunctions

Preparation and Infrared Optical Properties of VO2 Nano Array

Two-Channel VO2 Memory Meta-Device for Terahertz Waves

Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Observation of Optically Addressable Nonvolatile Memory in VO 2 at Room Temperature

Control of the Metal-Insulator Transition in VO₂ Epitaxial Film by Modifying Carrier Density.

Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3

Dimension-Controlled VO 2 Film for Optoelectronic Logic Gates and Information Encryption