Understanding the Performance of a Single Molecular Field Effect Transistor by First Principles Modeling

Wenyong Su,Jun Jiang,Yi Luo

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Understanding the Performance of a Single Molecular Field Effect Transistor by First Principles Modeling

What problem does this paper attempt to address?

Three-dimensional Modeling of Core-structured Field Effect Transistor

Ketao Chen,Hai-Feng Ji

DOI: https://doi.org/10.53964/jmn.2024002

2024-01-01

Journal of Modern Nanotechnology

Abstract:Objective: In our previous publication, a core-structured field effect transistor (CoreFET) device shows field effect transistor (FET) behavior. In this work, we investigated factors such as the thickness of the film and the channel on the conductivity of the device in order to optimize the geometry to provide guidance on the fabrication of the device with the best performance. Methods: This study uses Silvaco ATLAS numerical simulation software to investigate the performance of CoreFET. The effects of the thickness of the dielectric layer, SiO2, and the distance between the drain and source (channel length) on the conductivity of the semi-conductor indium gallium zinc oxide (IGZO) have been studied. The flat FET models with the same parameters were used for comparison. Results: Our simulation results demonstrate a directed correlation between the optimized conductivity of the device and the thickness of the dielectric material, as well as the length of the channel. Enhanced sensitivity is achievable by employing a thinner dielectric layer and a narrower channel. Conclusion: According to the results, the device can achieve better performance by optimizing the thickness of the insulator and the gap distance between drain and source electrodes. The remarkable similarity between them indicates that the FET effect remained largely unaffected by variations in FET shape. This observation suggests a consistent outcome across FETs, reinforcing the notion that CoreFET exhibits comparable results as those of film FETs. This finding significantly broadens the scope of CoreFET applications.
Device Physics And Performance Potential Of Iii-V Field-Effect Transistors

Yang Liu,Himadri S. Pal,Mark S. Lundstrom,Dae-Hyun Kim,Jesus A. Del Alamo,Dimitri A. Antoniadis

DOI: https://doi.org/10.1007/978-1-4419-1547-4_3

2010-01-01

Abstract:The device physics and technology issues for III-V transistors are examined from a simulation perspective. To examine device physics, an In GaAs HEMT structure similar to those being explored experimentally is analyzed. The physics of this device is explored using detailed, quantum mechanical simulations based on the non-equilibrium Green's function formalism. In this chapter, we: (1) elucidate the essential physics of III-V HEMTs, (2) identify key technology challenges that need to be addressed, and (3) estimate the expected performance advantage for III-V transistors.
Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Huang, J.Z.,Wen-Yan Yin

DOI: https://doi.org/10.1109/TED.2010.2082547

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:The performance prediction of double-walled carbon nanotube (DWCNT) array-built field-effect transistors (DWCNTFETs) is performed theoretically. The charge densities and surface potentials of double walls are solved in a self-consistent manner with the effects of wall screening among the DWCNT array treated appropriately. Some comparisons are made between our method and the nonequilibrium Green's function approach, with good agreement obtained. The influences of phonon scattering, doping resistances, Schottky barrier resistances, screening effects, and parasitic capacitances on DWCNTFET performance are examined in detail for different array geometries. It is found that, although its intrinsic channel part has no speed advantage over the single-walled counterpart, the overall speed performance can be better with low array densities and large diameters of the DWCNTs. The delay and cutoff frequency of the DWCNTFET can be decreased by 15% and increased by 30%, respectively. In particular, its better on current property can be utilized in the design of nanodevices with high-power-handling capability. © 2010 IEEE.
Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Afshan Khaliq,Shuo Zhang,Jun Z. Huang,Kai Kang,Wen-Yan Yin

DOI: https://doi.org/10.2528/pier22041202

2022-01-01

Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.
A Generalized Quantum Chemical Approach for Modeling of Single Molecular Field Effect Transistors

Wenyong Su,Jun Jiang,Yi Luo

IF: 4.304

2005-01-01

The Journal of Chemical Physics

Abstract:Molecular electronics is an active research area for the future information technology. The fabrication of basic electronic elements with molecules as the core-operators has been made experimentally in the laboratory in recent years. However, the underlying electron or charge transport mechanisms for most devices are still under debate, Theoretical modelling based on the first-principles methods are expected to play an important role in this field. A generalized quantum chemical approach based on Green's function scattering theory has been developed and applied to two- and three-terminal molecular devices. It allows to study both elastic and inelastic electron scattering at hybrid density functional theory levels. It can treat molecular devices where the metal electrodes and the molecule are either chemically or physically bonded on equal footing. As one of the applications, we have studied the length dependence of electron transport in gold-oligophenylene-gold junctions. We have shown that the experimental results for molecular junctions of oligophenylene with di erent lengths can be well reproduced by hybrid density functional theory calculations. It is also found that the current-voltage characteristics of the junctions depend strongly on the metal-molecule bonding distances. With the help of the calculations, the possible gold-molecule bonding distances in the experimental devices are identi ed. The central focus of this thesis is to study the three-terminal molecular devices, namely the eld e ect transistor (FET). An extension of our quantum chemical approach to FET devices has been made and successfully applied to different FET devices constructed with polymer, small and middle sized conjugated molecules. The experimentally observed conductance oscillation in polymer FET and three orders of magnitude enhancement of the current in electrochemical gated molecular FET have been verified by the calculations. The electron transport mechanisms of these devices are revealed.
An efficient model algorithm for two-dimensional field-effect transistors

Zhao-Yi Yan,Zhan Hou,Fan Wu,Ruiting Zhao,Jianlan Yan,Anzhi Yan,Zhenze Wang,Kan-Hao Xue,Houfang Liu,He Tian,Yi Yang,Tian-Ling Ren

2023-03-13

Abstract:Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.

Materials Science
A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Zhijun Lyu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Bin Lu,Xiaoran Cui,Yingxiang Zhao

DOI: https://doi.org/10.1109/TED.2018.2870249

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, a universal analytical current model for a double-gate Si-based tunnel field-effect transistor (TFET) is presented considering the effects of charges in source depletion region and channel. An accurate surface potential model is developed first by solving the pseudo-2-D Poisson equations in the depletion regions, and then is used to calculate the drain tunneling current. The modelin...
How to Report and Benchmark Emerging Field-Effect Transistors

Zhihui Cheng,Chin-Sheng Pang,Peiqi Wang,Son T. Le,Yanqing Wu,Davood Shahrjerdi,Iuliana Radu,Max C. Lemme,Lian-Mao Peng,Xiangfeng Duan,Zhihong Chen,Joerg Appenzeller,Steven J. Koester,Eric Pop,Aaron D. Franklin,Curt A. Richter

DOI: https://doi.org/10.1038/s41928-022-00798-8

IF: 33.255

2022-01-01

Nature Electronics

Abstract:The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way. This Perspective examines the challenges involved in assessing the operation and performance of field-effect transistors based on emerging materials, and provides guidelines for the consistent reporting and benchmarking of the devices.
First-Principles Study Of Electrochemical Gate-Controlled Conductance In Molecular Junctions

Wenyong Su,Jun Jiang,Wei Lu,Yi Luo

DOI: https://doi.org/10.1021/nl061376z

IF: 10.8

2006-01-01

Nano Letters

Abstract:A first-principles computational method is developed to study the electrochemical gate-controlled conductance in molecular junctions. It has been applied to a single molecular field-effect transistor made by a perylene tetracaboxylic diimide molecule connected to gold electrodes and has successfully reproduced the experimentally observed huge gate voltage effect on the current. It is found that such a significant gain is a result of the large polarization of the molecule induced by the huge local electrical field generated by the electrochemical gate. The resonant electron tunneling through unoccupied molecular orbitals is shown to be the dominant transport process.
Analytic Models for Organic Field-Effect Transistors Based on Exponential and Power Mobility Models

Jinling Luo,Jiuxun Sun,Shuai Kang,Ziwei Pan,Xie Fu,Liang Wang,Wenqiang Lu

DOI: https://doi.org/10.1088/1572-9494/acc3f5

2023-01-01

Communications in Theoretical Physics

Abstract:The fundamental I–V formula of an organic field effect transistor(OFET) is improved to overcome the divergence of the integrand, so it is very convenient for both numerical calculations and analytic derivations. The analytic I–V formulae are derived based on the exponential mobility model and power-function mobility model, respectively, and the derived analytic formulae are applied to three OFET devices. The results calculated from the reformulated analytic I–V formulae taking in exponential and power function mobility models are all in good agreement with the experimental I–V data. The parameters μ 0 and γ that are extracted from the mobility model and fitted by experimental data show simple Arrhenius temperature dependence and inverse linear relationship with temperature, respectively. These findings are very useful for practical applications and device simulations.
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Mathieu Luisier,Cedric Klinkert,Sara Fiore,Jonathan Backman,Youseung Lee,Christian Stieger,Áron Szabó

2023-10-27

Abstract:Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.

Mesoscale and Nanoscale Physics
A Physics-Based Compact Model for MoS2 Field-Effect Transistors Considering the Band-Tail Effect and Contact Resistance

Yuan Liu,Jiawei Zeng,Zeqi Zhu,Xiao Dong,Wanling Deng

DOI: https://doi.org/10.35848/1347-4065/abb7e1

IF: 1.5

2020-01-01

Japanese Journal of Applied Physics

Abstract:In this paper, we present a compact surface-potential-based drain current model in molybdenum disulfide (MoS2) field-effect transistors (FETs). Considering variable range hopping (VRH) transport via band-tail states in MoS(2)transistors, an explicit solution for surface potential has been derived and it provides a good description over different regions of operation by comparisons with numerical data. Based on the charge-sheet model (CSM), which applies to drift-diffusion transport, the current expression including contact resistance and velocity saturation effect is developed. Furthermore, the presented model is validated and shows a good agreement with the experimental data for MoS2FETs.
Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor

Soumya Sen,Mamta Khosla,Ashish Raman

DOI: https://doi.org/10.1134/s1063782624601377

IF: 0.66

2024-11-04

Semiconductors

Abstract:Tunnel field-effect transistors (TFETs) face challenges in integrated circuit applications due to their low on current and ambipolar behavior, despite their steeper subthreshold slope. To enhance the on current and mitigate ambipolar conduction, heterojunction approaches are crucial, which ultimately improve the on to off current ratio of tunnel field effect transistors. This research presents an analytical model for heterostructure nanotube tunnel FETs. The model derives surface potential, capacitance, and drain current estimations by solving Poisson's equation, incorporating both accumulation and ionized charges. These factors are also considered in the capacitance modelling to account for the effects of n -type impurity atoms in the channel. The model accounts for the combined influence of gate and drain voltages. The performance of the proposed model is validated by comparison with simulation results from Silvaco Atlas TCAD, showing impressive agreement.

physics, condensed matter
Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Zhao-Yi Yan,Zhan Hou,Kan-Hao Xue,Tian Lu,Ruiting Zhao,Junying Xue,Fan Wu,Minghao Shao,Jianlan Yan,Anzhi Yan,Zhenze Wang,Penghui Shen,Mingyue Zhao,Xiangshui Miao,Zhaoyang Lin,Houfang Liu,He Tian,Yi Yang,Tian-Ling Ren

2023-03-20

Abstract:Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.

Applied Physics,Mesoscale and Nanoscale Physics
High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Renrong Liang,Ning Cui,Mei Zhao,Wang, Jing

DOI: https://doi.org/10.1109/isdrs.2011.6135375

2011-01-01

Abstract:Recently tunnel field effect transistors (TFETs) have been extensively investigated due to the ability to suppress the short channel effects [1]. However, certain drawbacks of the TFET device, particularly its high average subthreshold swing (SS) and low on-state current, hamper the device's performance [2]. Another problem with TFETs is that they exhibit ambipolar behavior, which leads to high Ioff current [3]. To improve these characteristics simultaneously, we developed a novel TFET design with a tri-material-gate (TMG), and its properties were analyzed by numerical simulations.
Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

Ning Cui,Renrong Liang,Jing Wang,Jun Xu

DOI: https://doi.org/10.1109/NANO.2012.6321906

IF: 3.5

2012-01-01

Nanotechnology

Abstract:In this paper, we present an analytical model of silicon-based hetero-material-gate (HMG) tunnel field effect transistor (TFET). This model includes the calculation of electric potential, electric field and band-to-band tunneling rate. Electrical characteristics of the HMG TFET can be accurately described by this model. The electrical behavior of the HMG TFET obtained by the analytical model is compared with the numerical simulation results, and shows excellent agreement. It is demonstrated that the HMG TFET has superior electrical performance than single-material-gate TFET.
Investigation of Schottky–Barrier Carbon Nanotube Field-Effect Transistor by an Efficient Semi-Classical Numerical Modeling

Changxin Chen,Wei Zhang,Bo Zhao,Yafei Zhang

DOI: https://doi.org/10.1016/j.physleta.2009.10.083

IF: 2.707

2009-01-01

Physics Letters A

Abstract:An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational efficiency and simultaneously present a result in good agreement to that obtained from the non-equilibrium Green's function (NEGF) formalism based on the first principle. With this method, the effects of the CNT diameter, power supply voltage, thickness and dielectric constant of gate insulator on the device performance are investigated.
How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration

Chuan Liu,Xiaojie Li,Yiyang Luo,Ya Wang,Sujuan Hu,Chenning Liu,Xiaoci Liang,Hang Zhou,Jun Chen,Juncong She,Shaozhi Deng

DOI: https://doi.org/10.1002/advs.202104896

2022-01-01

Abstract:Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) or hybrid integrations (e.g., with diodes, photodetectors, or field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials and device factors. Here, it is shown that they could be understood within the same physical picture, i.e., charge transport from gated to nongated semiconductors. One proposes an indicator based on material and device factors for characterizing the transport and derives a unified and simplified solution for describing the current-voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for quick understanding and designing of these complex, innovative devices.
A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Ning Cui,Li-Bin Liu,Qian Xie,Zhouliang Tan,Renrong Liang,Jing Wang,Jun Xu

DOI: https://doi.org/10.7567/jjap.52.044303

IF: 1.5

2013-01-01

Japanese Journal of Applied Physics

Abstract:In this paper, a two-dimensional analytical model for the tunnel field effect transistor (TFET) on the silicon-on-insulator substrate is proposed. The accurate electrostatic potential and electric field of the device are obtained by solving the Poisson equation with appropriate boundary conditions. The accuracy of the proposed analytical model is verified by comparing with numerical simulation. It is shown that the electrical behavior of the TFET is more properly described by defining the zero vertical electric field at the channel/buried oxide interface. Furthermore, this analytical model is extended to implement in the hetero-material-gate (HMG) TFET. The physical principle of the HMG TFET can also be depicted, and electrical properties are characterized using this model.
Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

M. Suguna,V. A. Nithya sree,R. Kaveri,M. Hemalatha,N. B. Balamurugan,D. Sriramkumar,P. Suveetha Dhanaselvam

DOI: https://doi.org/10.1007/s12633-022-01687-7

IF: 3.4

2022-03-16

Silicon

Abstract:A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By implementing Finite Differentiation Method and varying work functions, Triple Material Gates are decomposed into three different individual gates with different work functions. These individual 1D Poisson equations that are decomposed are combined by applying sufficient boundary constraints. As a result, this reduces the difficulty of solving 2D Poisson equations. The expressions of surface potential and drain current are made simpler for the proposed analytical model. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Heterojunction TFETs.

materials science, multidisciplinary,chemistry, physical

Understanding the Performance of a Single Molecular Field Effect Transistor by First Principles Modeling

Three-dimensional Modeling of Core-structured Field Effect Transistor

Device Physics And Performance Potential Of Iii-V Field-Effect Transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

A Generalized Quantum Chemical Approach for Modeling of Single Molecular Field Effect Transistors

An efficient model algorithm for two-dimensional field-effect transistors

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

How to Report and Benchmark Emerging Field-Effect Transistors

First-Principles Study Of Electrochemical Gate-Controlled Conductance In Molecular Junctions

Analytic Models for Organic Field-Effect Transistors Based on Exponential and Power Mobility Models

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

A Physics-Based Compact Model for MoS2 Field-Effect Transistors Considering the Band-Tail Effect and Contact Resistance

Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

Investigation of Schottky–Barrier Carbon Nanotube Field-Effect Transistor by an Efficient Semi-Classical Numerical Modeling

How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET