Thermoelectric Properties of Cd 3−x A x TeO 6 (A = In 3+ , La 3+ and Bi 3+ ) Ceramics

Weiling Luan,Yue Jin Shan,Mitsuru Itoh,Hideo Imoto

DOI: https://doi.org/10.1557/PROC-691-G12.3

2002-01-01

Abstract:Perovskite oxide Cd 3 TeO 6 was electron-doped by the introduction of oxygen vacancies and substitution of trivalent cations, In 3+ , La 3+ and Bi 3+ . Their electric properties were investigated and compared with that of undoped Cd 3 TeO 6 . Negative temperature dependence of resistivity was observed in undoped, air-sintered Cd 3 TeO 6 . The resis tivity of Cd 3−x A x TeO 6 (A = In 3+ , La 3+ and Bi 3+ ) showed a metallic behavior with very slight temperature dependence. Indium-doped samples gave a low resistivity, which were decreased by more than three orders of magnitudes than that of air-sintered, undoped Cd 3 TeO 6 . The negative Seebeck coefficient and Hall coefficient obtained from all samples indicate that electrons are the charge carriers. The absolute Seebeck coefficients values of doped samples are decreased by 5 ∼ 10 times than that observed in undoped Cd3TeO6. Fortunately, the resistivity of indium-doped samples is low enough to provide a good thermoelectric power factor, and the optimum value of Cd 2.97 In 0.03 TeO 6 was calculated as 1.35×10 −4 Wm −1 K −2 . This result is close to that of the current best n-type perovskite thermoelectric material Ba 0.4 Sr 0.6 PbO 3 .