Abstract:Ab initio calculations of the total dielectronic recombination (DR) rate coefficients for thirteen ions along the NiI isoelectronic sequence in the ground state (Kr 8+ , Mo 14+ , Ag 19+ , Sn 22+ , Xe 26+ , Nd 32+ , Gd 36+ , Yb 42+ , W 46+ , Au 51+ , Pb 54+ , At 57+ , and U 64+ ) have been performed using the flexible atomic code. The level-by-level calculations are performed for evaluating the DR contributions through the relevant Cu-like autoionizing inner-shell excited 3l 17 4l ′ n ′′ l ′′ and 3l 17 5l ′ n ′′ l ′′ configuration complexes with n ′′ ≤15, which are associated with Δn=1 and Δn=2 core-excitations, respectively. The usual (n ′′ ) -3 scaling law is found to be invalid for low- Z ions. A level-by-level extrapolation procedure is employed to obtain the contributions through higher n ′′ complexes. The decays to autoionizing levels followed possibly by radiative cascades could enlarge the rates at relatively high temperature by a factor up to about 23%. For the whole isoelectronic ions the contributions from 3s 2 3p 6 3d 9 4l ′ n ′′ l ′′ dominate the total DR rates while the contributions from the 3s 2 3p 6 3d 9 5l ′ n ′′ l ′′ configuration complexes are about 10-20% at relatively high temperature. On the basis of the calculated results, a general analytic formula for the total DR rate coefficients of all the ions with 36≤Z ≤92 along the NiI isoelectronic sequence is constructed. The comparisons of the rates obtained from the general formula with those from the detailed calculations show that the formula is of high precision, generally better than 3% accuracy for electron temperatures kT≥0.1E I , where E I is the ionization energy of the Cu-like ion. The present DR rates at temperature above 1.0E I are larger than the previously published data by a factor above 30%. The commonly used semiempirical formula proposed by Burgess and modified by Merts may overestimate the rates at high temperature by a factor of about 2 for low-Z ions.

Dielectronic recombination rate coefficients for the Ni I isoelectronic sequence

Dielectronic recombination rate coefficients for the Ni ${\sf I}$ isoelectronic sequence

Dielectronic Recombination Rate Coefficients for the CoI Isoelectronic Sequence

Dielectronic Recombination of Co-like Gold Ions

Dielectronic recombination of Ni-like gold ion through the Cu-like 3d 94ln′l′ (n′ = 4, 5) configurations

Dielectronic Recombination Of Ni-Like Gold Ion Through The Cu-Like 3d(9)4ln ' L ' (N ' = 4, 5) Configurations

Total dielectronic recombination rate coefficient for Co-like tungsten

Dielectronic Recombination of Ni-Like Gold Ion Through the Cu-Like 3 D 9 4 Ln L ( N = 4,5) Configurations

Partial and Total Dielectronic Recombination Rate Coefficients for W$^{55+}$ to W$^{38+}$

Partial and Total Dielectronic Recombination rate coefficients for W73+ to W56+

Experimental Dielectronic Recombination Rate Coefficients for Lithium-Like 40Ca17+

Dielectronic recombination rate coefficients of fluorine-like nickel

Relativistic Dielectronic Recombination Process: Electron and H-Like Ions

Ab initio Dielectronic recombination rate coefficients for highly-charged Ar-like ions

Absolute dielectronic recombination rate coefficients of highly charged ions at the storage ring CSRm and CSRe

Dielectronic Recombination Rate Coefficients of Carbon-Like Kr30+

Experimentally Derived Dielectronic Recombination Rate Coefficients for Heliumlike C V and Hydrogenic O VIII

Dielectronic recombination data for astrophysical applications: Plasma rate-coefficients for Fe^q+ (q=7-10, 13-22) and Ni^25+ ions from storage-ring experiments

Electron Impact Excitation Rate Coefficients for P-like Ni XIV

Resonance Excitation Process for Ni-like Gold

Dielectronic Recombination of Co-like Tantalum