Abstract:Ab initio calculations of the total dielectronic recombination (DR) rate coefficients for thirteen ions along the NiI isoelectronic sequence in the ground state (Kr 8+ , Mo 14+ , Ag 19+ , Sn 22+ , Xe 26+ , Nd 32+ , Gd 36+ , Yb 42+ , W 46+ , Au 51+ , Pb 54+ , At 57+ , and U 64+ ) have been performed using the flexible atomic code. The level-by-level calculations are performed for evaluating the DR contributions through the relevant Cu-like autoionizing inner-shell excited 3l 17 4l ′ n ′′ l ′′ and 3l 17 5l ′ n ′′ l ′′ configuration complexes with n ′′ ≤15, which are associated with Δn=1 and Δn=2 core-excitations, respectively. The usual (n ′′ ) -3 scaling law is found to be invalid for low- Z ions. A level-by-level extrapolation procedure is employed to obtain the contributions through higher n ′′ complexes. The decays to autoionizing levels followed possibly by radiative cascades could enlarge the rates at relatively high temperature by a factor up to about 23%. For the whole isoelectronic ions the contributions from 3s 2 3p 6 3d 9 4l ′ n ′′ l ′′ dominate the total DR rates while the contributions from the 3s 2 3p 6 3d 9 5l ′ n ′′ l ′′ configuration complexes are about 10-20% at relatively high temperature. On the basis of the calculated results, a general analytic formula for the total DR rate coefficients of all the ions with 36≤Z ≤92 along the NiI isoelectronic sequence is constructed. The comparisons of the rates obtained from the general formula with those from the detailed calculations show that the formula is of high precision, generally better than 3% accuracy for electron temperatures kT≥0.1E I , where E I is the ionization energy of the Cu-like ion. The present DR rates at temperature above 1.0E I are larger than the previously published data by a factor above 30%. The commonly used semiempirical formula proposed by Burgess and modified by Merts may overestimate the rates at high temperature by a factor of about 2 for low-Z ions.

Dielectronic Recombination Of Ni-Like Gold Ion Through The Cu-Like 3d(9)4ln ' L ' (N ' = 4, 5) Configurations

Dielectronic Recombination of Ni-Like Gold Ion Through the Cu-Like 3 D 9 4 Ln L ( N = 4,5) Configurations

Dielectronic recombination of Ni-like gold ion through the Cu-like 3d 94ln′l′ (n′ = 4, 5) configurations

Dielectronic Recombination of Co-like Gold Ions

Dielectronic recombination rate coefficients for the Ni ${\sf I}$ isoelectronic sequence

Dielectronic recombination rate coefficients for the Ni I isoelectronic sequence

Resonance Excitation Process for Ni-like Gold

Dielectronic Recombination Rate Coefficients for the CoI Isoelectronic Sequence

Dielectronic recombination rate coefficients of fluorine-like nickel

Relativistic Dielectronic Recombination Process: Electron and H-Like Ions

Effects of Configuration Interaction on Dielectronic Recombination of Cu-Like Gold Ion Through 3 D + E → 4 L '4 L '' Capture Process

Experimental Dielectronic Recombination Rate Coefficients for Lithium-Like 40Ca17+

Studies of Electron-Ion Resonant Recombination of Li-like Si 11+ ions

Total dielectronic recombination rate coefficient for Co-like tungsten

Partial and Total Dielectronic Recombination Rate Coefficients for W$^{55+}$ to W$^{38+}$

KLL Dielectronic Recombination Resonant Strengths of He-like Up to O-like Tungsten Ions

Resonance Excitation Rate Coefficient of Ni-Like Tantalum

Dielectronic Recombination of Co-like Tantalum

Precise Studies on Resonant Energies of the First Intershell (kll) Dielectronic Recombination Processes for He- Up to O-Like Xenon

Electron Impact Excitation Rate Coefficients for P-like Ni XIV

KLn Dielectronic Recombination Process of B- Through He-like Cu Ions