Relativistic Dielectronic Recombination Process: Electron and H-Like Ions

YZ Qu,JG Wang,JK Yuan,JM Li
DOI: https://doi.org/10.1103/physreva.57.1033
1998-01-01
Abstract:We have developed a simplified relativistic configuration-interaction method to calculate the dielectronic recombination (DR) cross sections and rate coefficients. In this method, the infinite resonant doubly excited states can be treated conveniently in the framework of quantum defect theory. Here we report a systematic study of DR rate coefficients of hydrogenlike isoelectronic sequence with atomic number 2 less than or equal to Z less than or equal to 79. The behavior of the DR rate coefficients along the isoelectronic sequence is studied. The results are compared with the Burgess formula and other theoretical works. Because of its relativistic treatment, our method can be applicable for arbitrary Z ions and the validity of the widely used Burgess formula can be examined, e.g., for the ion with Z greater than or equal to 36, the results calculated from Burgess formula would be larger by a factor of 2. [S1050-2947(98)01902-7].
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