Abstract:The recently experimentally synthesized monolayer <math>MoSi2N4</math> and <math>WSi2N4</math> (Science 369, 670–674 (2020)) lack inversion symmetry, which allows them to become piezoelectric. In this work, based on ab initio calculations, we report structure effect on intrinsic piezoelectricity in septuple-atomic-layer <math>MSi2N4</math> (M=Mo and W), and six structures (<math>αi</math> (i=1 to 6)) are considered with the same space group. These structures can connect to each other through translation, mirror and rotation operations of double layer unit <math>Si2N2</math>. It is found that <math>MSi2N4</math> (M=Mo and W) with <math>αi</math> (i = 1 to 6) all are indirect band gap semiconductors. Calculated results show that <math>MoSi2N4</math> and <math>WSi2N4</math> monolayers have the same structural dependence on piezoelectric strain and stress coefficients (<math>d11</math> and <math>e11</math>), together with the ionic and electronic contributions to <math>e11</math>. The <math>α5</math> phase has largest <math>d11</math> for both <math>MoSi2N4</math> and <math>WSi2N4</math>, which are larger than 2.9 pm/V. Finally, we investigate the intrinsic piezoelectricity of monolayer <math>MA2Z4</math> (M=Cr, Mo and W; A=Si and Ge; Z=N and P) with<math>α1</math> and <math>α2</math> phases expect <math>CrGe2N4</math>, because they all are semiconductors and their enthalpies of formation between <math>α1</math> and <math>α2</math> phases are very close. The most important result is that monolayer <math>MA2Z4</math> containing P atom have more stronger piezoelectric polarization than one including N atom. The largest <math>d11</math> among <math>MA2N4</math> materials is 1.85 pm/V, which is close to the smallest <math>d11</math> of 1.65 pm/V in <math>MA2P4</math> monolayers. For <math>MA2P4</math>, the largest <math>d11</math> is up to 6.12 pm/V. Among the 22 monolayers, <math>α1</math>-<math>CrSi2P4,α1</math>-<math>MoSi2P4,α1</math>-<math>CrGe2P4,α1</math>-<math>MoGe2P4</math> and <math>α2</math>-<math>CrGe2P4</math> have large <math>d11</math>, which are greater than or close to 5 pm/V, a typical value for bulk piezoelectric materials. These materials are recommended for experimental exploration. Our study reveals that the <math>MA2Z4</math> family have the potential applications in piezoelectric field.

Flexible MA<sub>2</sub>Z<sub>4</sub> (M = Mo, W; A = Si, Ge and Z = N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous dynamic polarization

Flexible MA 2 Z 4 (M = Mo, W; A = Si, Ge and Z = N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous dynamic polarization.

Structure effect on intrinsic piezoelectricity in septuple-atomic-layer MSi 2 N 4 (M=Mo and W)

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

Monolayer polar metals with large piezoelectricity derived from MoSi$_2$N$_4$

MA$_2$Z$_4$ Family Heteorstructures: Promises and Prospects

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: Promising new materials for optoelectronic applications

A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility

Ferroelastic Zr2P2XY (X/Y = I, Br, Cl or F; X ≠ Y) monolayers with tunable in-plane electronic anisotropy and remarkable out-of-plane piezoelectricity

Emerging versatile two-dimensional MoSi$_2$N$_4$ family

MA2Z4 family heterostructures: Promises and prospects

Large Out-of-plane Piezoelectricity of Oxygen Functionalized MXenes for Ultrathin Piezoelectric Cantilevers and Diaphragms

Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation

First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer

The flexible Janus X2PAs (X = Si, Ge and Sn) monolayers with in-plane and out-of-plane piezoelectricity

Asymmetric XMoGeY2 (X = S, Se, Te; Y = N, P, As) monolayers as potential flexible materials for nano piezoelectric devices and nanomedical sensors

Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers

Giant Piezoelectricity of Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe, and GeS

Strain-induced semiconductor to metal transition in MA2Z4 bilayers