Abstract:The recently experimentally synthesized monolayer <math>MoSi2N4</math> and <math>WSi2N4</math> (Science 369, 670–674 (2020)) lack inversion symmetry, which allows them to become piezoelectric. In this work, based on ab initio calculations, we report structure effect on intrinsic piezoelectricity in septuple-atomic-layer <math>MSi2N4</math> (M=Mo and W), and six structures (<math>αi</math> (i=1 to 6)) are considered with the same space group. These structures can connect to each other through translation, mirror and rotation operations of double layer unit <math>Si2N2</math>. It is found that <math>MSi2N4</math> (M=Mo and W) with <math>αi</math> (i = 1 to 6) all are indirect band gap semiconductors. Calculated results show that <math>MoSi2N4</math> and <math>WSi2N4</math> monolayers have the same structural dependence on piezoelectric strain and stress coefficients (<math>d11</math> and <math>e11</math>), together with the ionic and electronic contributions to <math>e11</math>. The <math>α5</math> phase has largest <math>d11</math> for both <math>MoSi2N4</math> and <math>WSi2N4</math>, which are larger than 2.9 pm/V. Finally, we investigate the intrinsic piezoelectricity of monolayer <math>MA2Z4</math> (M=Cr, Mo and W; A=Si and Ge; Z=N and P) with<math>α1</math> and <math>α2</math> phases expect <math>CrGe2N4</math>, because they all are semiconductors and their enthalpies of formation between <math>α1</math> and <math>α2</math> phases are very close. The most important result is that monolayer <math>MA2Z4</math> containing P atom have more stronger piezoelectric polarization than one including N atom. The largest <math>d11</math> among <math>MA2N4</math> materials is 1.85 pm/V, which is close to the smallest <math>d11</math> of 1.65 pm/V in <math>MA2P4</math> monolayers. For <math>MA2P4</math>, the largest <math>d11</math> is up to 6.12 pm/V. Among the 22 monolayers, <math>α1</math>-<math>CrSi2P4,α1</math>-<math>MoSi2P4,α1</math>-<math>CrGe2P4,α1</math>-<math>MoGe2P4</math> and <math>α2</math>-<math>CrGe2P4</math> have large <math>d11</math>, which are greater than or close to 5 pm/V, a typical value for bulk piezoelectric materials. These materials are recommended for experimental exploration. Our study reveals that the <math>MA2Z4</math> family have the potential applications in piezoelectric field.

Flexible MA 2 Z 4 (M = Mo, W; A = Si, Ge and Z = N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous dynamic polarization.

Flexible MA<sub>2</sub>Z<sub>4</sub> (M = Mo, W; A = Si, Ge and Z = N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous dynamic polarization

Structure effect on intrinsic piezoelectricity in septuple-atomic-layer MSi 2 N 4 (M=Mo and W)

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First-Principles Study of Two-Dimensional Mop2si2z2 (Z=N, P, As) Monolayer

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Emerging versatile two-dimensional MoSi$_2$N$_4$ family

Janus MoAZ 3 H (A=Ge, Si; Z=N, P, As) monolayers: a new type semiconductors exhibit excellent photovoltaic and catalytic performances

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Volume-matched Ferroelectric and Piezoelectric ZnO/MgO Superlattice

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications