Abstract:The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (111) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (111) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (111) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within similar to 321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes. (C) 2014 Elsevier B. V. All rights reserved.

Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD

Optical and Structural Properties of AlN Thin Films Deposited on Different Faces of Sapphire Substrates

Peald-Grown Crystalline Aln Films on Si (100) with Sharp Interface and Good Uniformity

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Crystalline and Optical Properties of AlN Films with Varying Thicknesses (0.4-10 Μm) Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Epitaxial Growth of 2 Inch Diameter Homogeneous Aln Single-Crystalline Films by Pulsed Laser Deposition

Surface, Structural and Optical Properties of AlN Thin Films Grown on Different Face Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Epitaxial Growth of Homogeneous Single-Crystalline Aln Films on Single-Crystalline Cu (111) Substrates

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.