Abstract:Stacking faults are an important class of crystal defects commonly observed in nanostructures of close packed crystal structures. They can bridge the transition between hexagonal wurtzite (WZ) and cubic zinc blende (ZB) phases, with the most known example represented by the "nanowire (NW) twinning superlattice". Understanding the formation mechanisms of stacking faults is crucial to better control them and thus enhance the capability of tailoring physical properties of nanomaterials through defect engineering. Here we provide a different perspective to the formation of stacking faults associated with the screw dislocation-driven growth mechanism of nanomaterials. With the use of NWs of WZ aluminum nitride (AlN) grown by a high-temperature nitridation method as the model system, dislocation-driven growth was first confirmed by transmission electron microscopy (TEM). Meanwhile numerous stacking faults and associated partial dislocations were also observed and identified to be the Type I stacking faults and the Frank partial dislocations, respectively, using high-resolution TEM. In contrast, AlN NWs obtained by rapid quenching after growth displayed no stacking faults or partial dislocations; instead many of them had voids that were associated with the dislocation-driven growth. On the basis of these observations, we suggest a formation mechanism of stacking faults that originate from dislocation voids during the cooling process in the syntheses. Similar stacking fault features were also observed in other NWs with WZ structure, such as cadmium sulfide (CdS) and zinc oxide (ZnO).

Direct Observation of the Conventional Epitaxial and Novel Heteroaxial ZB-WZ Stacking Faults

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Local Lattice Distortion Mediated Formation of Stacking Faults in Mg Alloys

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Atypical U-shape micro-stacking faults within body-centered tetragonal Zr2Si nanoparticle in silicon modified Zircaloy-4 alloy

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

In Situ Mechanical Resonance Behaviour of Pristine and Defective Zinc Blende GaAs Nanowires

Energetics, electronic structure and electric polarization of basal stacking faults in wurtzite GaN and ZnO

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Direct observation of Face-centered cubic zirconium phase growth-induced stacking faults in Zr3Ge secondary phase nanoparticle

Selective Formation of Monodisperse Right Trigonal-Bipyramidal and Cube-Shaped CdSe Nanocrystals: Stacking Faults and Facet-Ligand Pairing

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Strengthening Brittle Semiconductor Nanowires Through Stacking Faults: Insights from in Situ Mechanical Testing.

Atomic-scale Dynamic Process of Deformation-Induced Stacking Fault Tetrahedra in Gold Nanocrystals

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Zn-dopant dependent defect evolution in GaN nanowires

Theoretical Study about the Formation of the Stacking Faults in GaN Nanowires along Different Growth Directions

Unconventional [math] twinning assisted by pyramidal II stacking faults

Stacking Fault in Non-Close Packed System- Role of Interstitials at Pentahedron Voids in WC Simple Hexagonal