Abstract:Voltage-controlled-oscillators (VCOs) with simultaneous low phase noise and wide frequency tuning range (FTR) spanning from tens GHz to millimeter-wave (mm-wave) bands are required for various standardized applications, such as 5G wireless communication, software-defined radios, and emerging high-speed wireline data links. However, due to the limited quality factor of on-chip passive components, increasing parasitics, and the tight capacitance budget, it is still very challenging for a single VCO to meet the wide FTR requirement while maintaining the phase-noise performance, especially in mm-wave bands. A recent development has proven that, when compared with enlarging switched-capacitor arrays or using switched inductors/transformers, multimode multicore techniques [1–5] are more efficient. This is because no RF current ideally flows through the lossy mode switches (assuming symmetrical cores), thereby relaxing the trade-off between on-resistance and off-capacitance of switches. In [1], a four-port dual-mode VCO with a 41.2% FTR is proposed. The parallel-inductor floorplan can achieve small inductance with high Q, favoring mm-wave operations. However, the dual-mode FTR is insufficient for many applications. The off-state negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs contribute large parasitic capacitance, which reduces the FTR. An EM mixed-coupling quad-mode quad-core VCO was reported in [2], which achieved an FTR of 73.2%. The quad-core topology theoretically improves the phase noise by 6dB. However, the quad-mode VCO has only two effective inductance values, while the other two modes are generated by introducing additional coupling capacitor pairs. On the one hand, the large coupling capacitors introduce non-negligible parasitic capacitance. On the other hand, two modes sharing the same inductance limit the design space, making it difficult to optimize both modes simultaneously. A triple-mode dual-core VCO with an 80.6% FTR using a compact inductor topology was proposed in [3]. However, the third mode was achieved by switching on and off negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs. The off-state negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs inevitably contribute to large parasitic capacitance. In addition, the asymmetrical compact-inductor topology sacrifices the Q and, consequently, the phase noise. The measured 186.3dBc/Hz average FoM at a 10MHz offset is inferior to the state-of-the-art narrow-band VCOs at similar frequency points.

A 12.1-16.5Ghz Resistance Self-biased Inverse Class-F23 VCO Achieving 20-54Khz 1/f3 Corner Frequency

A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

A 28-nm Dual-Mode Explicit Class-F23 VCO With Low-Loss CM Return Path Achieving 70–400-kHz 1/f3 PN Corner Over 4.9–7.3-GHz TR

A 3.7-Mw $K$ -Band Dual-Feedbacks VCO Employing a Self-Inversed Transformer with 190-Dbc/hz FOM

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A 12.5-to-15.4ghz, -118.9Dbc/hz PN at 1mhz Offset, and 191.0dbc/hz FoM VCO with Common-Mode Resonance Expansion and Simultaneous Differential 2Nd-Harmonic Output Using a Single Three-Coil Transformer in 65nm CMOS.

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

A 12.3–18.5-Ghz Single-Core Oscillator Using a Dual-Mode Variable Inductor with a Tunable Self-Resonant Frequency Technique

An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.

A 194.9dbc/hz FoM and 6.8-to-11.6ghz Quad-Core Dual-Mode Class-F VCO Featuring Wideband Flicker Noise Suppression

A 12-GHz Transformer Feedback Class-F2,3 Voltage-Controlled Oscillator Using Noise Circulating With FoM of 190.5 dBc/Hz

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

A -193.1Dbc/hz FOM 1.08mw Low Power 10ghz VCO in 22nm CMOS Technology

A 293-to-303 GHz Fundamental VCO with -4Dbm Peak Output Power in 40nm CMOS

A broadband CMOS LC voltage-controlled oscillator for FMCW synthesizer

A 4.2-5 GHz, Low Phase Noise LC-VCO with Constant Bandwidth and Small Tuning Gain

A 5 to 11.1 GHz Quad-Core Quad-Mode Octave Tuning-Range CMOS LC VCO