Abstract:The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We propose a novel structure with GaSb/GaAs type-II QD absorber embedded in the p-doped region of ideal solar cell, but spatially separated from the depletion region. We developed the model and used the detailed balance principle along with Poisson and continuity equations for calculating of the energy band bending along with the photocurrent and the dark current, and the conversion efficiency of the cell. Our model takes into account both single-photon and double-photon absorption as well as non-radiative processes in QDs and predicts that oncentration from 1-sun to 500-sun raises the efficiency from 30% to 50%. We showed that accumulation of charge in the QD absorber is the clue to understanding of potentially superior performance of the proposed solar cell. An attractive feature of the proposed solar cell is that QDs do not reduce the open circuit voltage but facilitate generation of the additional photocurrent to the extent that photovoltaic characteristics reduce to that of ideal IB solar cell while the efficiency meets the Luque-Marti limit. It should be noted that, although non-radiative processes like relaxation in QDs and recombination through QDs degrade photovoltaic characteristics of the proposed solar cell, its conversion efficiency is still predicted to be above the Shockley-Queisser limit by 5% to 10%. This study is an important step toward producing practical solar cells that benefit from additional photocurrent generated by sub-band gap photons.

Growth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar CellsGrowth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar Cells

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Theoretical Investigation and Improvement of Characteristics of InAs/GaAs Quantum Dot Intermediate Band Solar Cells by Optimizing Quantum Dot Dimensions

Inorganic Quantum Dot Materials and Their Applications in “organic” Hybrid Solar Cells

Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells

Intermediate-band solar cells employing quantum dots embedded in an energy fence barrier.

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings for applications in intermediate-band solar cells

Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots

In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers

Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region

Self-assembled growth of quasi-vertically oriented Sb2S3 thin films for substrate structured solar cells

Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence