Heterojunction Infrared Photodiodes with High Dynamic Range Based on Lead Sulfide Quantum Dot and Zinc Oxide Nanomembrane

Hailu Wang,Yi Dong,Xiao Fu,Xuezhi Zhao,Qixiao Zhao,Mengjia Xia,Mengyang Kang,Chaoyu Zhao,Zhihao Xu,Yicheng Zhu,Liang Gao,Jiang Tang,Lixin Dong,Jinshui Miao,Weida Hu

DOI: https://doi.org/10.1109/tnano.2023.3292258

2023-01-01

IEEE Transactions on Nanotechnology

Abstract:Photodetectors and imagers with short-wave infrared (SWIR) sensitivities at wavelengths beyond the bandgap of silicon ( E g ∼ 1.1 eV) are currently subject to a rapidly expanding application space. Despite continued technological advancement, linear dynamic range and high costs associated with processing III–V semiconductors still limit their widespread usage. Solution-processed colloidal quantum dots (CQDs) – with tunable bandgap and strong light-matter interaction – are highly suitable as infrared absorbers for cost-effective photodetection. Here, we demonstrate a SWIR photodiode architecture with n-type zinc oxide (ZnO) nanomembrane and p-type lead sulfide (PbS) CQD thin film vertically stacked together. In the PbS CQD/ZnO nanomembrane p-n photodiode, the incident SWIR photons can be absorbed in the PbS CQD film and the photoexcited electron-hole pairs are rapidly separated by the built-in electric field. The fabricated heterojunction p-n photodiodes show a broad short-circuit photocurrent response with a peak responsivity of ∼75 mA/W and a maximum linear dynamic range of ∼100 dB. Finally, to demonstrate the uniformity and scalability, 16 × 16 photodetectors arrays (256 pixels) have been realized showing a very uniform photocurrent response with I sc in the range of 100 nA. As the increased maturity of large-scale film fabrication of PbS CQD along with CMOS readout integrated circuit technology, focal plane arrays can be realized based on PbS CQD/ZnO nanomembrane heterostructures.