High Thermoelectric Performance of In-doped Cu2SnSe3 Prepared by Fast Combustion Synthesis

Yuyang Li,Guanghua Liu,Jiangtao Li,Kexin Chen,Laifeng Li,Yemao Han,Min Zhou,Mingjun Xia,Xingxing Jiang,Zheshuai Lin

DOI: https://doi.org/10.1039/c5nj03345d

IF: 3.3

2016-01-01

New Journal of Chemistry

Abstract:In-doped Cu2SnSe3 with ZT = 1.28 is produced by high-pressure combustion synthesis followed by spark plasma sintering.

What problem does this paper attempt to address?

Ultrafast One-Step Combustion Synthesis and Thermoelectric Properties of In-doped Cu 2 SnSe 3

Yuyang Li,Guanghua Liu,Jiangtao Li,Kexin Chen,Gang He,Zengchao Yang,Yemao Han,Min Zhou,Laifeng Li

DOI: https://doi.org/10.1016/j.matchemphys.2016.04.044

IF: 4.778

2016-01-01

Materials Chemistry and Physics

Abstract:Bulk In-doped Cu2SnSe3 samples were prepared by a fast and one-step method of high-gravity combustion synthesis. All the synthesized samples were dense with relative densities of >98%. The influence of Indium-doping on the phase composition of the samples was investigated. SEM and EDS measurements confirm the existence of SnSe and Cu2Se as secondary phase in the Cu2Sn1-xInxSe3 samples. In addition, the experimental results show that there is a solubility limit of indium in the Cu2SnSe3 matrix. The thermoelectric properties of the samples were measured in a temperature range from 323 K to 773 K, and the Cu2Sn0.8In0.2Se3 sample achieved a maximum ZT of 0.65 at 773 K, which was comparable with the best-reported result for Cu2SnSe3 materials prepared by conventional sintering approaches. With much reduced time and energy consumption, high-gravity combustion synthesis may offer a more efficient and economical way for producing thermoelectric materials. (C) 2016 Elsevier B.V. All rights reserved.
Combustion Synthesis of Cu2snse3 Thermoelectric Materials

Guanghua Liu,Kexin Chen,Jiangtao Li,Yuyang Li,Min Zhou,Laifeng Li

DOI: https://doi.org/10.1016/j.jeurceramsoc.2015.12.034

IF: 5.7

2016-01-01

Journal of the European Ceramic Society

Abstract:Thermoelectric materials are attractive for solar thermal energy conversion and waste heat recovery. The existing methods for fabricating thermoelectric materials involve multi-step processes with considerable time and energy consumption. Here we report a fast and one-step way to prepare thermoelectric materials by gas-pressure or high-gravity assisted combustion synthesis. Dense Cu2SnSe3 samples with a porosity below 2% were prepared from self-sustained combustion reaction of element powders. The electrical conductivity of the Cu2SnSe3 samples was greatly enhanced and the thermal conductivity was reduced by partial substitution of Sn with In. The ZT values of the un-doped and In-doped Cu2SnSe3 samples reached 0.51 and 0.62 at 773K, respectively, which are comparable to the best results reported for Cu2SnSe3 produced by other methods. Combustion synthesis offers an efficient way to prepare thermoelectric materials with reduced time and energy consumption, which may open up new possibilities for synthesis of thermoelectric materials.
Combustion Synthesis: A Rapid Way for Preparing Bulk Cu2SnSe3 Thermoelectric Materials

G.H. Liu,Rui Ma,Jiang Tao Li,Yu Yang Li

DOI: https://doi.org/10.4028/www.scientific.net/msf.898.1712

2017-01-01

Materials Science Forum

Abstract:The fabrication of bulk thermoelectric materials usually involves multi-step processes with considerable time and energy consumption. Here we applied a direct and rapid way of gas pressure assisted combustion synthesis to produce thermoelectric materials. As an example, bulk samples of Cu2SnSe3 had been prepared and their thermoelectric properties were investigated. Thermal analysis indicated that the Cu2SnSe3 samples kept stable up to 850 K. The un-doped Cu2SnSe3 showed ZT of 0.51 at 773 K, and by doping with Ag and In the ZT could be much increased to 1.42 at 823 K. The gas pressure assisted combustion synthesis method might provide a rapid way to directly produce bulk thermoelectric materials.
Direct Fabrication of Highly-Dense Cu2ZnSnSe4 Bulk Materials by Combustion Synthesis for Enhanced Thermoelectric Properties

Guanghua Liu,Jiangtao Li,Kexin Chen,Yuyang Li,Min Zhou,Yemao Han,Laifeng Li

DOI: https://doi.org/10.1016/j.matdes.2015.12.172

IF: 9.417

2015-01-01

Materials & Design

Abstract:Thermoelectric materials are attractive for solar thermal energy conversion and waste heat recovery. The preparation of bulk thermoelectric materials usually involves multi-step processes with considerable time and energy consumption. Here we report an alternative way called combustion synthesis to realize one-step and fast fabrication of bulk Cu2ZnSnSe4 thermoelectric materials. The combustion synthesis was carried out in 2MPa Ar gas atmosphere or in a high-gravity field in order to reduce the porosity in samples and complete simultaneous densification during synthesis. Nearly full-dense Cu2ZnSnSe4 samples with a porosity of <1% were prepared, showing thermoelectric properties similar to those of Cu2ZnSnSe4 materials prepared by other methods. The ZT of the Cu2ZnSnSe4 samples was clearly improved by partial substitution of Sn with In, and reached 0.59 at 773K for the composition of Cu2ZnSn0.9In0.1Se4. Compared with the conventional melt growth and powder sintering methods, combustion synthesis offers a fast, one-step, and furnace-free way for directly producing bulk Cu2ZnSnSe4 samples, which may open up new possibilities for synthesis and applications of Cu2ZnSnSe4-based thermoelectric materials.
Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Yimin Wu,Xvsheng Qiao,Xianping Fan,Xianghua Zhang,Shuo Cui,Jun Wan

DOI: https://doi.org/10.1007/s11051-015-3094-2

IF: 2.533

2015-01-01

Journal of Nanoparticle Research

Abstract:In this study, large-scale synthesis of Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticles with a narrow size distribution was achieved through a rapid-injection route. These nanoparticles showed a monodisperse and quasi-spherical morphology. The Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticle-based bulk materials were then prepared by hot-pressed sinter of the nanoparticles, and their thermoelectric performances were systematically studied. Due to the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces of the bulk materials, the maximum ZT value of the Cu3Sb0.98Sn0.02Se4 bulk materials reached 0.50 at 575 K.
Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

D Li,H W Ming,J M Li,B Jabar,W Xu,J Zhang,X Y Qin

DOI: https://doi.org/10.1021/acsami.9b20103

2020-01-22

Abstract:Cu3SbSe4-based materials have attracted much attention for thermoelectric power generation in the mid-temperature range due to their low cost, ecofriendliness, and abundant elements on the earth. However, the peak figure of merit (ZT) for the Cu3SbSe4-based system prepared by the fusion method is usually smaller than unity because of its high thermal conductivity. Here, we show that through a coprecipitation method combined with spark plasma sintering ultrafine-grained Cu3Sb0.94Sn0.06Se4-ySy (y = 0, 0.5) embedded with Cu3SbSe3 nanoprecipitates can be prepared. Due to the ultralow thermal conductivity and enhanced Seebeck coefficient, a record-high ZT value of 1.32 is achieved for the sample Cu3Sb0.94Sn0.06Se3.5Se0.5. The ultralow thermal conductivity is attributed to the enhanced phonon scattering caused by the nanoprecipitates and fine grains of the samples, and the improved Seebeck coefficient originates from the enhancement of electronic density-of-state effective mass. Present results demonstrate that excellent thermoelectric performance can be realized in dual-substituted and fine-grained Cu3Sb0.94Sn0.06Se4-ySy with nanoprecipitates.
Enhanced Thermoelectric Properties of Cu2SnSe3 by (Ag,In)-Co-Doping

Yuyang Li,Guanghua Liu,Tengfei Cao,Li-Min Liu,Jiangtao Li,Kexin Chen,Laifeng Li,Yemao Han,Min Zhou

DOI: https://doi.org/10.1002/adfm.201601486

IF: 19

2016-01-01

Advanced Functional Materials

Abstract:Dense bulk samples of (Ag,In)-co-doped Cu2SnSe3 have been prepared by a fast and one-step method of combustion synthesis, and their thermoelectric properties have been investigated from 323 to 823 K. The experimental results show that Ag-doping at Cu site remarkably enhances the Seebeck coeffi cient, reduces both electrical and thermal conductivities, and finally increases the figure of merit (ZT) value. The ZT of the Cu1.85Ag0.15SnSe3 sample reaches 0.80 at 773 K, which is improved by about 70% compared with the unadulterated sample (ZT = 0.46 at 773 K). First principle calculation indicates that Ag-doping changes the electronic structure of Cu2SnSe3 and results in larger effective mass of carriers, thus enhancing the Seebeck coeffi cient and reducing the electrical conductivity. The low electrical conductivity caused by Ag-doping can be repaired by accompanying In-doping at Sn site, and by (Ag, In)-co-doping the thermoelectric properties are further promoted. The (Ag, In)-co-doped sample of Cu1.85Ag0.15Sn0.9In0.1Se3 shows the maximum ZT of 1.42 at 823 K, which is likely the best result for Cu2SnSe3 -based materials up to now. This work indicates that co-doping may provide an effective solution to optimize the conflicting material properties for increasing ZT.
Effect of Se - site Doping on Thermoelectric Properties of Cu2SnSe3 Synthesized by Combustion

Rui MA,Yuyang LI,Guanghua LIU,Jiangtao LI,Yemao HAN,Min ZHOU,Laifeng LI

DOI: https://doi.org/10.13957/j.cnki.tcxb.2017.04.003

2017-01-01

Journal of Ceramics

Abstract:Cu2SnSe3 is a kind of new thermoelectric material with low or no poisonous elements. It has low thermal conductivity and high conductivity. The doping of Cu2SnSe3 can greatly improve the thermoelectricity of Cu2SnSe3, which is expected to be applied near the middle temperature region. The relative density of Cu2SnSe3 bulk material prepared by direct combustion synthesis is over 96％, and the maximum thermoelectricity is 0.48. It is equivalent to the sample prepared by the traditional sintering process. The whole reaction process is completed in a few minutes, thus greatly simplifying the synthesis process. In order to further improve the thermoelectric properties of Cu2SnSe3 materials, the polycrystalline bulk materials were prepared by combustion synthesis method. The effects of doping on the thermoelectric properties were investigated by doping Cu2SnSe3 with S and Te. The results show that the Se doping of S and Te increases the Seebeck coefficient, decreases the thermal conductivity and electrical conductivity, and improves the thermoelectricity value. S doped Cu2SnSxSe3-x samples, when x=0.15 at 773 K temperature to obtain the maximum ZT value of 0.66. Te-doped Cu2SnTexSe3-x samples, the maximum ZT value was 0.40 at a temperature of 773 K at x = 0.05.
High thermoelectric performance of Cu3SbSe4 nanocrystals with Cu2-xSe in situ inclusions synthesized by a microwave-assisted solvothermal method

Dandan Xie,Bin Zhang,Aijuan Zhang,Yongjin Chen,Yanci Yan,Hengquan Yang,Guiwen Wang,Guoyu Wang,Xiaodong Han,Guang Han,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/c8nr03550d

IF: 6.7

2018-08-02

Nanoscale

Abstract:(Ag,Sn) co-doped Cu3SbSe4 nanocrystals are obtained via a facile microwave-assisted solvothermal method, and their thermoelectric properties are investigated in the temperature range from 300 K to 623 K. Sn-doping on Sb sites dramatically increases the carrier concentration and thus the electrical conductivity, promoting the thermoelectric power factor. Further alloying with Ag on Cu sites strongly suppresses the lattice thermal conductivity close to the glass limit. Aside from point defect scattering, such reduction in lattice thermal conductivity largely relies on the formation of Cu2-xSe nanoinclusions, which serve as additional scattering centers for phonons. Overall, the sample with the nominal composition of Cu2.8Ag0.2Sb0.95Sn0.05Se4 reaches a minimum lattice thermal conductivity of 0.27 W m-1 K-1 and a maximum zT of 1.18 at 623 K, which is the best result for the Cu3SbSe4-based materials in the same temperature region. Our results demonstrate that the microwave-assisted synthesis method is capable of fabricating Cu based ternary compounds with high thermoelectric performance.
Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance

Di Li,Rui Li,Xiao-Ying Qin,Chun-Jun Song,Hong-Xing Xin,Ling Wang,Jian Zhang,Guang-lei Guo,Tian-Hua Zou,Yong-Fei Liu,Xiao-Guang Zhu

DOI: https://doi.org/10.1039/c3dt52447g

2014-01-28

Abstract:Large-scale fabrication of nanostructured Cu3SbSe4 and its Sn-doped sample Cu3Sb0.98Sn0.02Se4 through a low-temperature co-precipitation route is reported. The effects of hot-pressing temperatures, time and Sn doping on the thermoelectric properties of Cu3SbSe4 are explored. The maximum figure of merit ZTmax obtained here reaches 0.62 for the un-doped Cu3SbSe4, which is three times as large as that of Cu3SbSe4 synthesized by the fusion method. Due to the ameliorated power factor by optimized carrier concentration and the reduced lattice thermal conductivity by enhanced phonon scattering at grain interfaces, Sn doping leads to an improvement of thermoelectric performance as compared to Cu3SbSe4. The maximum ZT for Cu3Sb0.98Sn0.02Se4 is 1.05 in this work, which is 50% larger than the largest value reported.
High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Jin-Le Lan,Wenqiang Ma,Chengjie Deng,Guang-Kun Ren,Yuan-Hua Lin,Xiaoping Yang

DOI: https://doi.org/10.1007/s10853-017-1323-z

IF: 4.5

2017-01-01

Journal of Materials Science

Abstract:A series of K-doped Bi1−x K x CuSeO (0 ≤ x ≤ 0.10) compounds were prepared by combustion synthesis combined with spark plasma sintering method. Phase composition and microstructure analysis indicate almost single BiCuSeO phase in low doping level, while phase separation appears in heavy doping level. The thermoelectric properties of the Bi1−x K x CuSeO compounds have been measured in the temperature range of 323–823 K. The electrical conductivity is greatly enhanced by almost three times from 8.70 to 26.2 S/cm at 323 K by the substitution of Bi with K due to the large decrease of the activation energy. The overall thermal conductivity decreases significantly due to the strong point defect scattering by K doping and possibly enhanced interface scattering on the secondary phase. The maximum ZT reaches 0.6 at 823 K for the sample of x = 0.02, which is about 50% higher than that of the pristine sample. Our work offers a fast and more efficient approach for the fabrication of BiCuSeO-based materials.
Compositing effects for high thermoelectric performance of Cu2Se-based materials

Zhifang Zhou,Yi Huang,Bin Wei,Yueyang Yang,Dehong Yu,Yunpeng Zheng,Dongsheng He,Wenyu Zhang,Mingchu Zou,Jin-Le Lan,Jiaqing He,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1038/s41467-023-38054-y

IF: 16.6

2023-04-27

Nature Communications

Abstract:Abstract Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu 2 Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu 2 Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu 2 Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZT max value of ~2.82 at 1000 K and a ZT ave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu 2 Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.

multidisciplinary sciences
High Thermoelectric Performance of SnTe Via in Doping and Cu1.75Se Nanostructuring Approach

D. Li,H. W. Ming,J. M. Li,J. Zhang,X. Y. Qin,W. Xu

DOI: https://doi.org/10.1021/acsaem.9b02061

IF: 6.4

2019-01-01

ACS Applied Energy Materials

Abstract:High thermoelectric performance is realized in SnTe-based materials through In-doping and inclusion of Cu1.75Se nanostructure. A record-high ZT value of ~1.7 is achieved at 823 K for Sn0.96In0.04Te–yCu1.75Se (y=3%, 5% and 7%). This significant enhancement in thermoelectric performance is attributed to the incorporation of nanostructured Cu1.75Se into In-doped SnTe matrix, which can simultaneously modulate the electrical and thermal transport. In doping can enhance Seebeck coefficient, leading to the improvement of power factor. Cu1.75Se dispersed in the matrix can strengthen interface scattering at the phase boundaries, yielding an extremely low lattice thermal conductivity. As a result, peak ZT of 1.7 is obtained. Our results demonstrate that for SnTe-based materials, doping plus incorporation of nanostructured phase is an effective strategy in enhancing the thermoelectric performance of SnTe.
Thermoelectric Properties of S and Te-doped Cu2SnSe3 Prepared by Combustion Synthesis

Rui Ma,Guanghua Liu,Yuyang Li,Jiangtao Li,Kexin Chen,Yemao Han,Min Zhou,Laifeng Li

DOI: https://doi.org/10.1080/21870764.2018.1439609

2018-01-01

Journal of Asian Ceramic Societies

Abstract:S and Te-doped Cu2SnSe3 samples with chemical formula of Cu2SnSe3-xSx and Cu2SnSe3-xTex (x = 0.05, 0.10, 0.15, 0.20) are prepared, and the effect of S and Te-doping on thermoelectric properties is investigated. In all the samples, the Cu2SnSe3 phase is synthesized as the major product, and its lattice parameters decrease with S-doping but increase with Te-doping. EDS analysis confirms the incorporation of S and Te dopants in the Cu2SnSe3 phase, and reveals an element segregation in the Te-doped samples. S- and Te-doping decreases the electrical conductivity, enhance the Seebeck coefficient, and reduce the thermal conductivity. S-doping is effective to improve the ZT of Cu2SnSe3, and the Cu2SnSe3-xSx sample with x = 0.05 shows a ZT of 0.66 at 773 K, which is improved by more than 50% compared with that of the undoped sample. On the contrary, Te-doping leads to decreased ZT values owing to the significant reduction in electrical conductivity.
Co-precipitation Synthesis of Sn And/or S Doped Nanostructured Cu3Sb1−xSnxSe4−ySy with a High Thermoelectric Performance

Di Li,Rui Li,Xiao-Ying Qin,Jian Zhang,Chun-Jun Song,Ling Wang,Hong-Xing Xin

DOI: https://doi.org/10.1039/c3ce40956b

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Large-scale Sn and/or S doped Cu3Sb1-xSnxSe4-ySy (x = 0.02, 0.04, 0.06 and 0.10; y = 0, 0.5) nanoparticles were first prepared through a low-temperature co-precipitation route. The effects of Sn doping on the thermoelectric properties of the Cu3SbSe4-based materials were explored. Due to the improved power factor from optimizing the carrier concentration and the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces, the maximum thermoelectric figure of merit, ZT(max), obtained here reached 1.1 for the co-doped Cu3Sb0.94Sn0.06Se3.5S0.5 material, which is the largest value reported for Cu3SbSe4-based materials.
Chemical Synthesis of Nanostructured Cu2se with High Thermoelectric Performance

Di Li,Xiao Ying Qin,Yong Fei Liu,Chun Jun Song,Ling Wang,Jian Zhang,Hong Xing Xin,Guang Lei Guo,Tian Hua Zou,Guo Long Sun,Bao Jing Ren,Xiao Guang Zhu

DOI: https://doi.org/10.1039/c3ra47015f

IF: 4.036

2014-01-01

RSC Advances

Abstract:Two simplified chemical processes, a co-precipitation and a reduction method, were developed to synthesize pure Cu2Se nanoparticles. The XRD results indicate that the co-precipitation method is a better way to synthesize high-purity Cu2Se in comparison to the reduction method, where a small amount of Cu2O and Cu are found. Scanning electron microscopy reveals that Cu2Se powder synthesized by the reduction method possesses a morphology dominated by irregular hexagonal nanoplates and spherical nanoparticles; however, only nanoplates are observed in powder prepared by the co-precipitation method. The effect of the two synthetic methods on the thermoelectric properties of Cu2Se, in the temperature range of 300-1000 K, was investigated. The results indicate that the co-precipitation method subsequently combined with a hot-press process, is an effective way to improve Cu2Se thermoelectric performance compared to the reduction method together with hot-pressing. The largest figure of merit, ZT, for Cu2Se fabricated by the co-precipitation method is 1.35, which is 40% larger than that of Cu2Se fabricated by the reduction method (ZT(max)=0.97) due to its good power factor at high temperatures.
Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

Xin Cheng,Bo Zhu,Dongwang Yang,Xianli Su,Wei Liu,Hongyao Xie,Yun Zheng,Xinfeng Tang

DOI: https://doi.org/10.1021/acsami.1c22590

2022-02-02

Abstract:In this work, (Ag, In)-co-doped Cu2SnSe3-based compounds are prepared using a self-propagating high-temperature synthesis process. Ag2Se and as-synthesized (Ag, In)-co-doped Cu2SnSe3-based powders are mixed in a proportion according to the formula of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%), which is followed by a subsequent plasma-activated sintering (PAS) to obtain consolidated composite bulks. A sandwich experiment is designed to reveal the evolution of the microstructure and phase composition of the composite samples during the PAS process. We investigate the reaction mechanism between Ag2Se and Cu2SnSe3-based matrix as well as the influence of Ag2Se on the phase composition, microstructure, and thermoelectric transport properties of the composites. Ag2Se addition is proven to be effective to improve Ag solubility in the Cu1.85Ag0.15Sn0.91In0.09Se3 matrix and introduce a CuSe secondary phase and an Ag-rich phase at grain boundaries. The electrical conductivity of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%) composites decreases while the Seebeck coefficient increases with increasing Ag2Se addition, resulting in an optimized power factor. Moreover, benefiting from the collective phonon scattering at various defects induced by Ag2Se addition, the composite samples exhibit significantly suppressed lattice thermal conductivity, which reaches as low as 0.11 W m-1 K-1 at 700 K for the x = 5% sample. A peak figure-of-merit (ZT) of 1.26 at 750 K and an average ZT of 0.75 at 300-800 K are obtained for Cu1.85Ag0.15Sn0.91In0.09Se3/5% Ag2Se. This work provides an efficient way to improve average ZT values of Cu2SnSe3-based compounds for promising power generation at intermediate temperatures.
Realized High Power Factor and Thermoelectric Performance in Cu3SbSe4

J. M. Li,D. Li,C. J. Song,L. Wang,H. X. Xin,J. Zhang,X. Y. Qin

DOI: https://doi.org/10.1016/j.intermet.2019.03.009

IF: 4.075

2019-01-01

Intermetallics

Abstract:We report the realization of high thermoelectric performance in Cu3SbSe4-based materials through Sn-doping and inclusion of Cu3Sb0.94Sn0.06Se2.5S1.5 nanostructure. This significant enhancement in thermoelectric performance is attributed to simultaneous modulation of the electrical and thermal transport. Sn doping can reduce electrical resistivity, maintaining its high power factor. Cu3Sb0.94Sn0.06Se2.5S1.5 nanoparticles dispersed in the matrix can strengthen interface scattering at the phase boundaries, which can effectively scatter the heat-carrying phonons and thus yielding low lattice thermal conductivity. As a result, the figure of merit reaches similar to 0.87 at 673 K for Cu3Sb0.96Sn0.04Se4-3% Cu3Sb0.94Sn0.06Se2.5S1.5.
Toward Ultrahigh Thermoelectric Performance of Cu2SnS3‐Based Materials by Analog Alloying

Wang Li,Yubo Luo,Tian Xu,Zheng Ma,Chengjun Li,Yingchao Wei,Yang Tao,Yongxin Qian,Xin Li,Qinghui Jiang,Junyou Yang

DOI: https://doi.org/10.1002/smll.202301963

IF: 13.3

2023-05-15

Small

Abstract:Alloying with analog CuInSe2 leads to the formation of Sn vacancies and promotes the formation of stacking faults and nano twins in Cu2SnS3, resulting in an enhancement in carrier concentration and power factor as well as a reduced lattice thermal conductivity. Consequently, the final figure of merit of Cu2SnS3 reaches 1.14 at 773 K. Cu2SnS3 is a promising thermoelectric candidate for power generation at medium temperature due to its low‐cost and environmental‐benign features. However, the high electrical resistivity due to low hole concentration severely restricts its final thermoelectric performance. Here, analog alloying with CuInSe2 is first adopted to optimize the electrical resistivity by promoting the formation of Sn vacancies and the precipitation of In, and optimize lattice thermal conductivity through the formation of stacking faults and nanotwins. Such analog alloying enables a greatly enhanced power factor of 8.03 μW cm−1 K−2 and a largely reduced lattice thermal conductivity of 0.38 W m−1 K−1 for Cu2SnS3 – 9 mol.% CuInSe2. Eventually, a peak ZT as high as 1.14 at 773 K is achieved for Cu2SnS3 – 9 mol.% CuInSe2, which is one of the highest ZT among the researches on Cu2SnS3‐based thermoelectric materials. The work implies analog alloying with CuInSe2 is a very effective route to unleash superior thermoelectric performance of Cu2SnS3.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

G. -K. Ren,S. Butt,Y. -C. Liu,J. -L. Lan,Y. -H. Lin,C. -W. Nan,F. Fu,X. -F. Tang

DOI: https://doi.org/10.1002/pssa.201431347

2014-01-01

physica status solidi (a)

Abstract:High‐performance thermoelectric BiCuSeO ceramics have been prepared by solid state reaction combined with plasma activated sintering (PAS). Phase compositional and microstructural studies indicate composites having refined grain sizes (600–700 nm) with nanostructured ZnSe secondary phase. Our results reveal that Zn doping can lead to a large change in the carrier concentration (from 0.036 × 1020 cm−3 to 1.50 × 1020 cm−3), thus resulting in an increased electrical conductivity of three orders of magnitude at room temperature. The highest power factor of 4.21 µWcm−1K−2 at 873 K has been achieved by 10% Zn doping. On the other hand, the lattice thermal conductivity has been suppressed significantly due to refined grains, point defects and the nano‐inclusions of ZnSe phase. The dimensionless figure of merit (ZT) could reach up to 0.90 at 873 K in the BiCuSeO oxyselenides by the 10% Zn doping, which makes Zn‐doped BiCuSeO to be a promising candidate for thermoelectric applications.

High Thermoelectric Performance of In-doped Cu2SnSe3 Prepared by Fast Combustion Synthesis

Ultrafast One-Step Combustion Synthesis and Thermoelectric Properties of In-doped Cu 2 SnSe 3

Combustion Synthesis of Cu2snse3 Thermoelectric Materials

Combustion Synthesis: A Rapid Way for Preparing Bulk Cu2SnSe3 Thermoelectric Materials

Direct Fabrication of Highly-Dense Cu2ZnSnSe4 Bulk Materials by Combustion Synthesis for Enhanced Thermoelectric Properties

Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

Enhanced Thermoelectric Properties of Cu2SnSe3 by (Ag,In)-Co-Doping

Effect of Se - site Doping on Thermoelectric Properties of Cu2SnSe3 Synthesized by Combustion

High thermoelectric performance of Cu3SbSe4 nanocrystals with Cu2-xSe in situ inclusions synthesized by a microwave-assisted solvothermal method

Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance

High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Compositing effects for high thermoelectric performance of Cu2Se-based materials

High Thermoelectric Performance of SnTe Via in Doping and Cu1.75Se Nanostructuring Approach

Thermoelectric Properties of S and Te-doped Cu2SnSe3 Prepared by Combustion Synthesis

Co-precipitation Synthesis of Sn And/or S Doped Nanostructured Cu3Sb1−xSnxSe4−ySy with a High Thermoelectric Performance

Chemical Synthesis of Nanostructured Cu2se with High Thermoelectric Performance

Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

Realized High Power Factor and Thermoelectric Performance in Cu3SbSe4

Toward Ultrahigh Thermoelectric Performance of Cu2SnS3‐Based Materials by Analog Alloying

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO