Abstract:Silicon‐nanomembrane‐based high‐performance field‐effect transistors and capacitors are demonstrated utilizing HfO2/Al2O3 high‐k dielectrics and biodegradable PLGA‐gelatin‐chitosan substrates. The transient devices exhibit high effective mobility, on/off ratio, and on‐state current, which are on par with the highest performance of similar devices. Accelerated soaking tests reveal the dissolution kinetics of the biodegradable devices, which are beneficial for precise control of the functional lifetimes. Emerging transient electronics offer great potential in eco‐friendly and bioresorbable electronic applications. In this study, bendable and biodegradable metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and metal‐oxide‐semiconductor capacitors (MOSCAPs) have been fabricated by integrating HfO2/Al2O3 high‐k bilayers on the transferred silicon nanomembranes (Si NMs) and utilizing PLGA‐gelatin‐chitosan polymeric substrates. The transient n‐channel MOSFETs demonstrate high effective mobility of 871 cm2 V−1 s−1, high on‐state current of 27.6 μA μm−1, high on/off current ratio > 107, and low gate leakage current ≤2.7 × 10−7 A cm−2. The accumulation capacitance of the transient MOSCAPs exceeds 6.5 × 10−7 F cm−2, indicating an enhanced gate control over the Si NM channel. The presented excellent performance is on par with the highest performance of the reported transient devices. Accelerated soaking tests in aqueous environments combined with systematic studies of the electrical characteristics as a function of the transience stage reveal the dissolution chemistry and kinetics of the biodegradable devices associated with the underlying transient behaviors. Moreover, detailed analysis of mechanics provides insights into the optimized device‐grade geometries for precise control of the functional lifetimes. These results will be beneficial to paving a realistic path for achieving high‐performance and on‐demand water‐soluble Si NM based MOSFETs toward futuristic applications in disposable electronics and temporary biomedical implants.

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Proton Conducting Sodium Alginate Electrolyte Laterally Coupled Low-Voltage Oxide-Based Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

AlGaN/GaN Heterostructures for Non-Invasive Cell Electrophysiological Measurements.

Nanolaminated HfO2/Al2O3 Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates

Biocompatible and Biodegradable Organic Transistors Using a Solid‐State Electrolyte Incorporated with Choline‐Based Ionic Liquid and Polysaccharide

Laterally Coupled Izo-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

Degradable Photonic Synaptic Transistors Based on Natural Biomaterials and Carbon Nanotubes

Biodegradable oxide synaptic transistors gated by a biopolymer electrolyte

Transient Resistive Switching Devices Made from Egg Albumen Dielectrics and Dissolvable Electrodes

Biodegradable Materials for Transient Organic Transistors

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Super‐Assembled Hierarchical Cellulose Aerogel‐Gelatin Solid Electrolyte for Implantable and Biodegradable Zinc Ion Battery

Transient Light-Emitting Diodes Constructed from Semiconductors and Transparent Conductors that Biodegrade Under Physiological Conditions

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Indium-Zinc-Oxide Neuron Thin Film Transistors Laterally Coupled by Sodium Alginate Electrolytes

Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide