Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Nonlocal Transistor Based on a EuO-graphene/superconductor Hybrid Structure

Nonlocal Transistor Based on Pure Crossed Andreev Reflection in a EuO-graphene/superconductor Hybrid Structure

Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime

Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Pure valley- and spin-entangled states in a MoS 2 -based bipolar transistor

Electrically Tunable Crossed Andreev Reflection in a Ferromagnet–superconductor–ferromagnet Junction on a Topological Insulator

Light-modulated 8-Pmmn borophene-based pure crossed Andreev reflection

Charge Neutral Fermionic States And Current Oscillation In A Graphene-Superconductor Hybrid Structure

Crossed Andreev reflection in zigzag phosphorene nanoribbon based ferromagnet/superconductor/ferromagnet junctions

Nonlocal conductance via overlapping Andreev bound states in ferromagnet-superconductor heterostructures

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor-Graphene Junctions

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Competitive Spin-Flipped Normal Reflection and Equal-Spin Andreev Reflection in Heterojunctions of Nodal-Line Superconductors

Nonlocal Current-Voltage Characteristics of Gated Superconducting Sketched Oxide Nanostructures

Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

Perfect crossed Andreev reflection in the proximitized graphene/superconductor/proximitized graphene junctions

High-energy Electron Local Injection in Top-Gated Metallic Superconductor Switch

Interplay of Andreev reflection and Coulomb blockade in hybrid superconducting single electron transistors

Spin dependence of crossed Andreev reflection and electron tunneling induced by Majorana fermions.

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation