Abstract:The induced current channel, generated under colossal terahertz field enhancement, creates a nanobridge leading to a frequency‐doubled resonance spectrum. This represents the first observation of resonance changes of the metamaterial by nonlinear carrier transport of Si using the most widely used terahertz system, distinct from previous reports that utilized extremely intense experimental environments. Ongoing efforts spanning decades aim to enhance the efficiency of optical devices, highlighting the need for a pioneering approach in the development of next‐generation components over a broad range of electromagnetic wave spectra. The nonlinear transport of photoexcited carriers in semiconductors at low photon energies is crucial to advancements in semiconductor technology, communication, sensing, and various other fields. In this study, ultra‐low threshold resonance mode switching by strong nonlinear carrier transport beyond the semi‐classical Boltzmann transport regime using terahertz (THz) electromagnetic waves are demonstrated, whose energy is thousands of times smaller than the bandgap. This is achieved by employing elaborately fabricated 3D tip structures at the nanoscale, and nonlinear effects are directly observed with the THz resonance mode switching. The nanotip structure intensively localizes the THz field and amplifies it by more than ten thousand times, leading to the first observation of carrier multiplication phenomena in these low‐intensity THz fields. This experimental findings, confirmed by concrete calculations, shed light on the newly discovered nonlinear behavior of THz fields and their strong interactions with nanoscale structures, with potential implications and insights for advanced THz technologies beyond the quantum regime.

Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime

Nonlocal Transistor Based on Pure Crossed Andreev Reflection in a EuO-graphene/superconductor Hybrid Structure

Nonlocal Transistor Based on a EuO-graphene/superconductor Hybrid Structure

Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Electrically Tunable Crossed Andreev Reflection in a Ferromagnet–superconductor–ferromagnet Junction on a Topological Insulator

Tunnelling Resonances and Andreev Reflection in Transport of Electrons Through A Normal-Metal-Quantum-Dot-Superconductor System

Tunneling Resonances and Andreev Reflection Through an Interaction Quantum Dot Coupled with Two Half Metals and A Superconductor

High Transmission Superconducting THz Switch Based on a Electrically Tunable Metamaterial

Mesoscopic Terahertz Photoelectric Switch

Electrical control of crossed Andreev reflection and spin-valley switch in antiferromagnet/superconductor junctions

Resonant Andreev Reflection In A Normal-Metal-Quantum-Dot-Superconductor System

Electrically controlled crossed Andreev reflection in altermagnet/superconductor/altermagnet junctions

Crossed Andreev reflection in zigzag phosphorene nanoribbon based ferromagnet/superconductor/ferromagnet junctions

Superconducting Complementary Metamaterial-Based Switchable Device for Terahertz Wave Manipulation

Light-modulated 8-Pmmn borophene-based pure crossed Andreev reflection

Transport in a Two-Channel Nanotransistor Device with Lateral Resonant Tunneling

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor-Graphene Junctions

Inelastic Kondo-Andreev Tunneling in a Vibrating Quantum Dot

Electrically Terahertz Switchable Device Based on Superconducting Composite Structure Metamaterial