Etching Behavior of Microdefect in Diluted Magnetic Semiconductor H90.89 Mn0.11Te

Zewen Wang,Long Zhang,Gu Zhi,Jie Wang

2016-01-01

Abstract:The surface of H90 89 Mn0.11 Te wafer grown by vertical Bridgman method after being etched 30，60，90，120，and 150s by etchant of 150mL saturation water solution of potassium bichromate and 20 mL HCl have been observed by optical microscope and scanning electron microscope.Grain boundaries and Te inclusions are distinctly observable after etched 30s. but the intrinsical dislocation of wafer is only observable after 120s.The density of dislocation etch pits shows a peak value at 60s with increasing etching time，and turns to a steady state value after 120s.The dimensions of etch pits is always increase with etching time increasing.The analysis shows that the initial dislocation etch pits are induced by the surface damaged layer.