Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Superhard and Superconductive Polycrystalline Boron Doped Diamond Synthesized with Different Concentration of B4C

Superhard and superconductive polycrystalline boron doped diamond synthesized with different concentration of B 4 C

Superhard solid solutions of diamond and cubic boron nitride

The superconductivity in boron-doped polycrystalline diamond thick films

Hard Copper Boride with Exceptional Conductivity

Structure, Bonding, and Possible Superhardness of CrB4

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Significant enhancement of electrical conductivity in boron-doped diamond through HPHT post-annealing treatment

Effect of boron doping levels on the microstructure and characteristics of high-quality boron-doped diamond electrodes prepared by MPCVD

Superhard Boron-Rich Boron Carbide with Controlled Degree of Crystallinity

Superhard and Superconductive Polymorphs of Diamond-Like Bc3

Boron-doped diamond growth and characteristics in a Ni-based alloy catalyst system at HPHT conditions

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Effects of the additive boron on diamond crystals synthesized in the system of Fe-based alloy and carbon at HPHT

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Crystal structures, elastic properties, and hardness of high-pressure synthesized CrB2 and CrB4

Preparation, Characterization and Electrochemical Properties of Boron-Doped Diamond Films on Nb Substrates

Boron Doped Diamond Electrodes Based on Porous Ti Substrates

Preparation and electrochemical properties of boron-doped polycrystalline diamond film with five-fold twin structure

High-Pressure Behavior of Superconducting Boron-Doped Diamond