Abstract:Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1̅21̅0) plane of Bi2Se3 was preferably parallel to the (1̅100) or (1̅21̅0) plane of h-BN. In the case of the Bi2Se3 (2̅110) ∥ h-BN (11̅00) state, the Moiré pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures without introducing any impurity at the interfaces for electronic property characterization. Our quantum capacitance (QC) measurements showed a compelling phenomenon of thickness-dependent topological phase transition, which was attributed to the coupling effects of two surface states from Dirac Fermions at/or above six quintuple layers (QLs) to gapped Dirac Fermions below six QLs. Moreover, in ultrathin Bi2Se3 (e.g., 3 QLs), we observed the midgap states induced by intrinsic defects at cryogenic temperatures. Our results demonstrated that QC measurements based on h-BN/Bi2Se3/h-BN sandwiched structures provided rich information regarding the density of states of Bi2Se3, such as quantum well states and Landau quantization. Our approach in fabricating h-BN/Bi2Se3/h-BN sandwiched device structures through the combination of bottom-up growth and top-down dry transferring techniques can be extended to other two-dimensional layered heterostructures.

Epitaxial Growth of Bi, Sb, and Sn

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Epitaxial Growth of Bi(110) and Bi2Se3thin Films on a Ferromagnetic Insulator Substrate of Cr2Ge2Te6.

Van Der Waals Epitaxy of Bi Nanowires and Bi2Se3 Thin Films on an Antiferromagnetic Substrate of CoNb3S6

Comparative Study on Epitaxial Growth of Stanene and Bismuthene on InSb(111) Substrate

Kinetics-controlled Epitaxial Growth and Bipolar Transport Properties of Semimetal Bi4Se3

Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates

Epitaxial Fabrication of Topological Bi-Sb Alloy Films by Surface Alloying of Sb Nanofilms

Epitaxial Growth of Antimony Nanofilms on HOPG and Thermal Desorption to Control the Film Thickness

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Wafer-Scale and Topologically Nontrivial Α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Epitaxial Growth of One‐Monolayer Pb1−xBix Alloy Films

Strain In Epitaxial Bi2se3 Grown On Gan And Graphene Substrates: A Reflection High-Energy Electron Diffraction Study

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Composition-dependent structural transition in epitaxial thin films on Si(111)

Composition-dependent Structural Transition in Epitaxial Bi1−xSbx Thin Films on Si(111)

Achieving a Large Energy Gap in Bi(110) Atomically Thin Films