Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Photoinduced Dimension Crossover in 1T-TiSe2

Light-induced dimension crossover dictated by excitonic correlations

Incoherence-to-coherence Crossover Observed in Charge-Density-wave Material 1T-Tise2

Electron-Exciton Coupling in 1T-Tise 2 Bilayer

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Mapping the dispersion of the occupied and unoccupied band structure in photoexcited 1T-TiSe$_2$

Revealing Light-Induced Charge Density Wave Melting and Carrier Redistribution in 1T-Tise2

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Enhancing Charge-Density-Wave Order In 1t-Tise2 Nanosheet By Encapsulation With Hexagonal Boron Nitride

Photoinduced charge density wave transition like a puppet on a string

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Evolution of the Electronic Structure of 1T-Cu(x)tise(2).

Suppression of the Charge Density Wave State in Two-Dimensional 1T-TiSe 2 by Atmospheric Oxidation.

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Chiral charge-density wave in TiSe$_2$ due to photo-induced structural distortions

Photoinduced Hidden CDW State and Relaxation Dynamics of 1T-Tas_2 Probed by Time-Resolved Terahertz Spectroscopy

Plasmon Excitations Across the Charge-Density-Wave Transition in Single-Layer TiSe$_2$

Exploring control of the emergent exciton insulator state in 1T-TiSe$_2$ monolayer by state-of-the-art theory models

Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave

Structurally assisted melting of excitonic correlations in 1T-TiSe2

Orbital- and $k_z$-selective hybridisation of Se 4p and Ti 3d states in the charge density wave phase of TiSe$_2$