Abstract:The prior theoretical model shows that GaSb is one of the few non-alloy semiconductors showing phonons ballistic effect in the thermal conductivity. However, no previous literature had been reported on the experimental measurements on the quasi-ballistic thermal transport of the GaSb thin film. In this paper, we employed the time-domain thermoreflectance (TDTR) to study the thermal transport of nanoparticles embedded GaSb thin film. Our measurements results provide first experimental evidence to verify the quasi-ballistic effect in the thermal transport of the GaSb thin film. The apparent cross-plane thermal conductivity of pure GaSb sample drops ∼15% when the pump laser modulation frequency is increased from 0.8 MHz to 10 MHz at room temperature. To further understand the thermal transport mechanism, Tempered Lévy analysis is employed to study the quasi-ballistic effect of the GaSb thin film. The model shows that GaSb thin film thermal transport has a superdiffusion exponent, [Formula: see text] = 1.51 ± 0.23 and Lévy-Fourier transition length, r LF = 0.19 ± 0.13 µm. Both obtained values via Tempered Lévy indicates the quasi-ballistic transport phenomena in GaSb thin film. However, this frequency dependence of the cross-plane thermal conductivity will disappear in the presence of the 3%-20% ErSb nanoparticles. Another thermal transport mechanism, i.e. anisotropic thermal transport, can be observed in GaSb thin film. The ratio of in- to cross-plane thermal conductivity varies from ∼0.2 to ∼0.7 in the 0%-20% ErSb nanoparticles volume concentrations. Detailed temperature dependence of the in-plane thermal conductivity of ErSb:GaSb samples with 0%-20% are also included in the paper for the understanding of the scattering mechanism in the thin film thermal transport. With enhanced understanding of the quasi-ballistic and anisotropic thin film thermal transport, our results might improve the thermal management efficiency of the GaSb devices.

Ballistic Thermal Transport at Sub‐10 Nm Laser‐Induced Hot Spots in GaN Crystal (adv. Sci. 2/2023)

Ballistic Thermal Transport at Sub-10 nm Laser-Induced Hot Spots in GaN Crystal

Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging

Quasiballistic Thermal Transport from Nanoscale Heaters and the Role of the Spatial Frequency

Ballistic Transport Enhanced Heat Convection at Nanoscale Hotspots

Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy.

Anisotropic Thermal Conductivity of the Nanoparticles Embedded GaSb Thin Film Semiconductor.

Thermal Analysis For Laser Selective Removal Of Metallic Single-Walled Carbon Nanotubes

High-order Phonon Anharmonicity and Thermal Conductivity in GaN

Quasi-ballistic thermal transport in silicon carbide nanowires

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Effects of ballistic transport on the thermal resistance and temperature profile in nanowires

Spectral Thermal Spreading Resistance of Wide-Bandgap Semiconductors in Ballistic-Diffusive Regime

Self-Heating Hotspots in Superconducting Nanowires Cooled by Phonon Black-Body Radiation

Observation of Enhanced Heat Transfer Between a Nanotip and Substrate at Nanoscale Distances Via Direct Temperature Probing with Raman Spectroscopy

Evidence of Ballistic Thermal Transport in Lithium Niobate at Room Temperature

Thermal Spreading Resistance in Ballistic-Diffusive Regime for GaN HEMTs

Noncontact Sub-10 Nm Temperature Measurement in Near-Field Laser Heating

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs