Abstract:Voltage-controlled-oscillators (VCOs) with simultaneous low phase noise and wide frequency tuning range (FTR) spanning from tens GHz to millimeter-wave (mm-wave) bands are required for various standardized applications, such as 5G wireless communication, software-defined radios, and emerging high-speed wireline data links. However, due to the limited quality factor of on-chip passive components, increasing parasitics, and the tight capacitance budget, it is still very challenging for a single VCO to meet the wide FTR requirement while maintaining the phase-noise performance, especially in mm-wave bands. A recent development has proven that, when compared with enlarging switched-capacitor arrays or using switched inductors/transformers, multimode multicore techniques [1–5] are more efficient. This is because no RF current ideally flows through the lossy mode switches (assuming symmetrical cores), thereby relaxing the trade-off between on-resistance and off-capacitance of switches. In [1], a four-port dual-mode VCO with a 41.2% FTR is proposed. The parallel-inductor floorplan can achieve small inductance with high Q, favoring mm-wave operations. However, the dual-mode FTR is insufficient for many applications. The off-state negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs contribute large parasitic capacitance, which reduces the FTR. An EM mixed-coupling quad-mode quad-core VCO was reported in [2], which achieved an FTR of 73.2%. The quad-core topology theoretically improves the phase noise by 6dB. However, the quad-mode VCO has only two effective inductance values, while the other two modes are generated by introducing additional coupling capacitor pairs. On the one hand, the large coupling capacitors introduce non-negligible parasitic capacitance. On the other hand, two modes sharing the same inductance limit the design space, making it difficult to optimize both modes simultaneously. A triple-mode dual-core VCO with an 80.6% FTR using a compact inductor topology was proposed in [3]. However, the third mode was achieved by switching on and off negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs. The off-state negative G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> pairs inevitably contribute to large parasitic capacitance. In addition, the asymmetrical compact-inductor topology sacrifices the Q and, consequently, the phase noise. The measured 186.3dBc/Hz average FoM at a 10MHz offset is inferior to the state-of-the-art narrow-band VCOs at similar frequency points.

A 7.92-9.72 GHz Differential Inverse-Class-F VCO Based on Electrical Coupling

A 3.7-Mw $K$ -Band Dual-Feedbacks VCO Employing a Self-Inversed Transformer with 190-Dbc/hz FOM

An Inverted Complementary Cross-Coupled VCO to Reduce Phase Noise Sensitivity to KVCO

Differential VCO design with a wide frequency tuning range

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A 3.65-4.10 GHz Class-C VCO with 189.1 Dbc/hz FoM Based on Low Electromagnetic Coupling

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

An Enhanced Class-F Dual-Core VCO With Common-Mode-Noise Self-Cancellation and Isolation Technique

An 8.2 GHz triple coupling low-phase-noise class-F QVCO in 65nm CMOS.

An 8-12Ghz Class-F3 VCO with Multi-LC Tank in 28nm CMOS.

A 1.0 V Differential VCO in 0.13 Μm CMOS Technology

A 2ghz Low Power Differentially Tuned CMOS Monolithic LC-VCO

A 5.8 GHz Implicit Class-F VCO in 180-nm CMOS Technology

19.5 A 13.7-to-41.5GHz 214.1dBc/Hz FoM<inf>T</inf> Quad-Core Quad-Mode VCO Using an Oscillation-Mode-Splitting Technique

A 0.065 mm 2 Inductive Coupling Based Dual Core mm-Wave VCO With 183 dBc/Hz FoMT

The Design of a 2.82～4.04 GHz CMOS Differential Tuned LC VCO

A 5 to 11.1 GHz Quad-Core Quad-Mode Octave Tuning-Range CMOS LC VCO

An 110 GHz CMOS Colpitts VCO based on switched coupled-inductor

A 2.9-to-7.2 GHz Dual-Core Quad-Mode VCO Achieving 206.5dbc/hz FoMT in 55nm CMOS

A 180 GHz differential Colpitts VCO in 65 nm CMOS

8.1 an 11.5-to-14.3ghz 192.8dbc/hz FoM at 1mhz Offset Dual-Core Enhanced Class-F VCO with Common-Mode-Noise Self-Cancellation and Isolation Technique